DMT8012LSS
80V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
Features and Benefits
RDS(ON) Max
ID Max
TA = +25°C
16.5mΩ @ VGS = 10V
9.7A
20mΩ @ VGS = 4.5V
8.8A
80V
100% Unclamped Inductive Switch (UIS) Test in Production
High Conversion Efficiency
Low RDS(ON) – Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
Mechanical Data
This new generation N-Channel Enhancement Mode MOSFET is
designed to minimize RDS(ON), yet maintain superior switching
performance. This device is ideal for use in:
Notebook Battery Power Management
Loadswitches
Backlighting
Power Management Functions
DC-DC Converters
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
D
SO-8
S
D
S
D
S
D
G
D
G
S
Top View
Internal Schematic
Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMT8012LSS-13
Notes:
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain
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