DN0150ADJ-7

DN0150ADJ-7

  • 厂商:

    BCDSEMI(美台)

  • 封装:

    SOT963

  • 描述:

    TRANS 2NPN 50V 0.1A SOT963

  • 数据手册
  • 价格&库存
DN0150ADJ-7 数据手册
DN0150ADJ / DN0150BDJ PART OBSOLETE - USE DST847BDJ DUAL NPN SURFACE MOUNT TRANSISTOR OBSOLETE – PART DISCONTINUED Features • • • • • Mechanical Data Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Ultra Small Package Case: SOT-963 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish  Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.0027 grams (approximate) • • • • • • • SOT-963 5 6 Q2 Q1 2 1 Top View Maximum Ratings 4 3 Device Schematic @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current – Continuous Base Current Symbol VCBO VCEO VEBO IC IB Value 60 50 5 100 30 Unit V V V mA mA Symbol PD RθJA TJ, TSTG Value 300 417 -55 to +150 Unit mW °C/W °C Thermal Characteristics Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient (Note 3) Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current ON CHARACTERISTICS (Note 4) Collector-Emitter Saturation Voltage DC Current Gain SMALL SIGNAL CHARACTERISTICS @TA = 25°C unless otherwise specified DN0150ADJ DN0150BDJ Symbol Min Typ Max Unit V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO 60 50 5 — — — — — — — — — — 0.1 0.1 V V V µA µA IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCB = 60V, IE = 0 VEB = 5V, IC = 0 VCE(SAT) — 120 200 0.10 — — 0.25 240 400 V IC = 100mA, IB = 10mA — VCE = 6V, IC = 2mA hFE Transition Frequency fT 60 — — MHz Output Capactiance Cob — 1.3 — pF Notes: 1. 2. 3. 4. Test Condition VCE = 10V, IE = -1mA f = 30MHz VCB = 10V, IE = 0, f = 1MHz No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Device mounted on FR-4 PCB with minimum recommended pad layout. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤2% DN0150ADJ / DN0150BDJ Document number: DS31484 Rev. 4 - 4 1 of 4 www.diodes.com June 2021 © Diodes Incorporated DN0150ADJ / DN0150BDJ -IC, COLLECTOR CURRENT (mA) PD, POWER DISSIPATION (W) 1,000 250 200 150 100 50 RθJA = 417°C/W 0 Pw = 100ms 1 1,000 1 10 100 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage (Note 3) VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) VCE = 6V TA = 85°C TA = 25°C TA = -55°C 100 10 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical DC Current Gain vs. Collector Current (DN0150BDJ) 1.2 IC/IB = 10 1.0 0.8 TA = -55°C 0.6 TA = 25°C TA = 85°C TA = 150°C 0 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current DN0150ADJ / DN0150BDJ Document number: DS31484 Rev. 4 - 4 1 IC/IB = 10 TA = 150°C 0.1 TA = 85°C TA = 25°C TA = -55°C 0.01 0.0001 1,000 0.1 1 0.001 0.01 IC, COLLECTOR CURRENT (A) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 0.1 1 TA = 150°C 0.2 DC 10 0 0.4 Pw = 10ms 100 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) OBSOLETE – PART DISCONTINUED 300 2 of 4 www.diodes.com 1.2 VCE = 6V 1.0 0.8 TA = -55°C 0.6 0.4 TA = 25°C TA = 85°C TA = 150°C 0.2 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current June 2021 © Diodes Incorporated DN0150ADJ / DN0150BDJ 100 320 fT, GAIN-BANDWIDTH PRODUCT (MHz) f = 1MHz 280 CAPACITANCE (pF) OBSOLETE – PART DISCONTINUED 240 10 200 Cibo 160 120 1 Cobo 0 0.1 5. VCE = 6V f = 30MHz 0 2 4 6 8 IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current 10 (Note 5) Device DN0150ADJ-7 DN0150BDJ-7 Notes: 40 0 100 1 10 VR, REVERSE VOLTAGE (V) Fig. 7 Typical Capacitance Characteristics Ordering Information 80 Packaging SOT-963 SOT-963 Shipping 10,000/Tape & Reel 10,000/Tape & Reel For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information xx xx= Product Type Marking Code: T3 = DN0150ADJ T4 = DN0150BDJ Package Outline Dimensions D e1 L E E1 e b (5 places) A A1 DN0150ADJ / DN0150BDJ Document number: DS31484 Rev. 4 - 4 c SOT-963 Dim Min Max Typ A 0.40 0.50 0.45 A1 0 0.05 c 0.077 0.177 0.127 D 0.95 1.05 1.00 E 0.95 1.05 1.00 E1 0.75 0.85 0.80 L 0.05 0.15 0.10 b 0.10 0.20 0.15 e 0.35 Typ e1 0.70 Typ All Dimensions in mm 3 of 4 www.diodes.com June 2021 © Diodes Incorporated DN0150ADJ / DN0150BDJ IMPORTANT NOTICE OBSOLETE – PART DISCONTINUED 1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 5. Diodes products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 6. Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. Copyright © 2021 Diodes Incorporated www.diodes.com DN0150ADJ / DN0150BDJ Document number: DS31484 Rev. 4 - 4 4 of 4 www.diodes.com June 2021 © Diodes Incorporated
DN0150ADJ-7 价格&库存

很抱歉,暂时无法提供与“DN0150ADJ-7”相匹配的价格&库存,您可以联系我们找货

免费人工找货