DNLS412E-13

NOT RECOMMENDED FOR NEW DESIGN USE FZT688B DNLS412E LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR Features         Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 57.5m at 4A High DC Current Gain hFE > 400 at IC = 3A Complementary PNP Type Available (DPLS315E) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) 3 2 1 4 SOT-223 Mechanical Data        3 E Case: SOT-223 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish — Matte Tin annealed over Copper Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.112 grams (approximate) Maximum Ratings C 4 2 C 1 B TOP VIEW COLLECTOR 2,4 BASE 1 3 EMITTER Schematic and Pin Configuration @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Symbol VCBO VCEO VEBO IC ICM Value 12 12 5 4 10 Unit V V V A A Symbol Value Unit PD 1 W RJA 125 °C/W TJ, TSTG -55 to +150 °C Thermal Characteristics Characteristic Power Dissipation @TA = 25°C (Note 3) Thermal Resistance, Junction to Ambient Air (Note 3) @TA = 25°C Operating and Storage Temperature Range Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS31324 Rev. 4 - 3 1 of 4 www.diodes.com DNLS412E © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE FZT688B Electrical Characteristics DNLS412E @TA = 25°C unless otherwise specified Characteristic Off Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current On Characteristics (Note 4) Symbol Min Typ Max Unit V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO 12 12 5           100 100 V V V nA nA Collector-Emitter Saturation Voltage VCE(SAT)      0.02 0.03 0.06 0.20 0.23 0.04 0.06 0.18 0.35 0.40 V Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage VBE(SAT) VBE(ON)   500 400 100      1.1 1.0 V V     150      240 35 40 500      MHz pF pF ns ns DC Current Gain AC Characteristics Transition Frequency Input Capacitance Output Capacitance Switching Times Notes: hFE fT Cibo Cobo ton toff Test Condition IC = 100A, IE = 0 IC = 10mA, IB = 0 IE = 100A, IC = 0 VCB = 10V, IE = 0 VEB = 4V, IC = 0 IC = 0.1A, IB = 1mA IC = 0.1A, IB = 0.5mA IC = 1A, IB = 50mA IC = 3A, IB = 20mA IC = 4A, IB = 50mA IC = 3A, IB = 20mA VCE = 2V, IC = 3A VCE = 2V, IC = 0.1A VCE = 2V, IC = 3A VCE = 2V, IC = 10A VCE = 5V, IC = 50mA, f = 50MHz VEB = 0.5V, f = 1MHz VCB = 10V, f = 1MHz VCC = 10V, IC = 500mA IB1 = -IB2 = 50mA 4. Pulse Test: Pulse width 300s. Duty cycle 2.0%. 4.0 1.0 IC, COLLECTOR CURRENT (A) PD, POWER DISSIPATION (mW) 3.5 0.8 0.6 0.4 0.2 IB = 5mA 3.0 IB = 4mA 2.5 IB = 3mA 2.0 1.5 IB = 2mA 1.0 IB = 1mA 0.5 0 0 0 25 50 150 100 125 75 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Max Power Dissipation vs. Ambient Temperature DS31324 Rev. 4 - 3 1 2 3 4 5 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage 2 of 4 www.diodes.com 0 DNLS412E © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE FZT688B DNLS412E 1.0 1,800 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 1,600 1,400 1,200 1,000 800 600 400 0.8 0.6 0.4 0.2 200 0.01 0.1 1 0 0.001 10 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.2 VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 0 0.001 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current Ordering Information (Note 5) Device DNLS412E-13 Notes: Packaging SOT-223 Shipping 2500/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/ap2007.pdf. Marking Information (Top View) YWW N412 DS31324 Rev. 4 - 3 N412 = Product Type Marking Code YWW = Date Code Marking Y = Last digit of year ex: 7 = 2007 WW = Week code 01 - 52 3 of 4 www.diodes.com DNLS412E © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE FZT688B DNLS412E Package Outline Dimensions SOT-223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b1 2.90 3.10 3.00 b2 0.60 0.80 0.70 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e — — 4.60 e1 — — 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm Suggested Pad Layout: IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS31324 Rev. 4 - 3 4 of 4 www.diodes.com DNLS412E © Diodes Incorporated