DP350T05
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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Features
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•
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•
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Epitaxial Planar Die Construction
Complementary NPN Type Available (DN350T05)
Ideal for Medium Power Amplification and Switching
Lead, Halogen and Antimony Free, RoHS
Compliant "Green" Device (Notes 2, 3 and 4)
Qualified to AEC-Q101 Standards for High
Reliability
A
C
B
C
B TOP VIEW E
D
E
G
H
Mechanical Data
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•
•
•
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K
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Finish ⎯ Matte Tin Finish annealed over
Alloy 42 leadframe. Solderable per MIL-STD-202,
Method 208
Marking Information: K3U - See Page 2
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approximate)
Maximum Ratings
M
L
C
E
B
@TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes:
J
SOT-23
Min
Max
0.37
0.51
1.20
1.40
2.30
2.50
0.89
1.03
0.45
0.60
1.78
2.05
2.80
3.00
0.013
0.10
0.903
1.10
0.45
0.61
0.085
0.180
0°
8°
α
All Dimensions in mm
Dim
A
B
C
D
E
G
H
J
K
L
M
Symbol
VCBO
VCEO
VEBO
IC
PD
RθJA
TJ, TSTG
DP350T05
-350
-350
-5.0
-500
300
417
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead. Halogen and Antimony Free.
3. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product is manufactured with Green Molding Compound and does not contain Halogens or Sb2O3 Fire Retardants.
DS30624 Rev. 7 - 2
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DP350T05
© Diodes Incorporated
Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 5)
Symbol
Min
Max
Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
-350
-350
-5.0
⎯
⎯
⎯
⎯
⎯
-50
-50
V
V
V
nA
nA
hFE
20
30
30
20
15
⎯
⎯
200
200
⎯
⎯
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
⎯
⎯
⎯
-0.30
-0.35
-0.50
-1.0
V
Base-Emitter Saturation Voltage
VBE(SAT)
-0.75
-0.85
-0.90
V
Base-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Transition Frequency
VBE(ON)
⎯
⎯
⎯
⎯
-2.0
V
Cobo
fT
⎯
50
7.0
⎯
pF
MHz
DC Current Gain
Notes:
Test Condition
IC = -100μA, IE = 0
IC = -1.0mA, IB = 0
IE = -10μA, IC = 0
VCB = -200V, IE = 0
VCE = -3.0V, IC = 0
IC = -1.0mA, VCE = -10V
IC = -10mA, VCE = -10V
IC = -30mA, VCE = -10V
IC = -50mA, VCE = -10V
IC = -100mA, VCE = -10V
IC = -10mA, IB = -1.0mA
IC = -20mA, IB = -2.0mA
IC = -30mA, IB = -3.0mA
IC = -50mA, IB = -5.0mA
IC = -10mA, IB = -1.0mA
IC = -20mA, IB = -2.0mA
IC = -30mA, IB = -3.0mA
IC = -100mA, VCE = -10V
VCB = -20V, f = 1.0MHz, IE = 0
VCE = -10V, IC = -20mA
5. Short duration pulse test used to minimize self-heating effect.
PD, POWER DISSIPATION (mW)
350
300
250
200
150
100
50
0
0
-1
50
75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs. Ambient Temperature
0
25
DS30624 Rev. 7 - 2
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-10
-100
IC, COLLECTOR CURRENT (mA)
Fig. 2, DC Current Gain vs. Collector Current
DP350T05
© Diodes Incorporated
VBE(SAT), BASE EMITTER
SATURATION VOLTAGE (V)
VCE(SAT), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
-1
-0.1
-0.01
-10 -20 -30 -40 -50 -60 -70 -80 -90 -100
IC, COLLECTOR CURRENT (mA)
Fig. 3, Collector-Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (mA)
Fig. 4, Base Emitter Saturation Voltage
vs. Collector Current
70
-0.9
60
-0.8
C, CAPACITANCE (pF)
VBE(ON), BASE EMITTER ON VOLTAGE (V)
-1
-0.7
-0.6
-0.5
-0.4
-0.3
50
40
30
20
-0.2
10
-0.1
0
0
-100
-10
IC, COLLECTOR CURRENT (mA)
Fig. 5, Base-Emitter On Voltage vs. Collector Current
VR, REVERSE VOLTAGE (V)
Fig. 6, Capacitance vs. Reverse Voltage
(Note 6)
Packaging
SOT-23
Device
DP350T05-7
6.
1
-1
Ordering Information
Notes:
-100
-10
Shipping
3000/Tape & Reel
For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
K3U
Date Code Key
Year
Code
Month
Code
DS30624 Rev. 7 - 2
2005
S
Jan
1
2006
T
Feb
2
Mar
3
YM
Marking Information
K3U = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: S = 2005
M = Month ex: 9 = September
2007
U
Apr
4
2008
V
May
5
Jun
6
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2009
W
Jul
7
2010
X
Aug
8
Sep
9
2011
Y
Oct
O
2012
Z
Nov
N
Dec
D
DP350T05
© Diodes Incorporated
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30624 Rev. 7 - 2
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DP350T05
© Diodes Incorporated
