DSS4160U
NEW PRODUCT
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
Features
Mechanical Data
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Epitaxial Planar Die Construction
Low Collector-Emitter Saturation Voltage, VCE(SAT)
Complementary PNP Type Available (DSS5160U)
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 1)
"Green Device" (Note 2)
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Case: SOT-323
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish ⎯ Matte Tin annealed over Copper Plated
Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.006 grams (approximate)
C
B
Top View
E
Device Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Base Current (DC)
Peak Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
Value
80
60
5
1
2
300
1
Unit
V
V
V
A
A
mA
A
Symbol
PD
RθJA
TJ, TSTG
Value
400
313
-55 to +150
Unit
mW
°C/W
°C
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
Notes:
1. No purposefully added lead.
2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
DSS4160U
Document number: DS31684 Rev. 2 - 2
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March 2009
© Diodes Incorporated
DSS4160U
Electrical Characteristics
@TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
80
60
5
⎯
⎯
⎯
Collector Cutoff Current
ICBO
⎯
⎯
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
ICES
IEBO
⎯
⎯
⎯
⎯
⎯
⎯
⎯
100
50
100
100
V
V
V
nA
μA
nA
nA
DC Current Gain
hFE
250
200
100
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
115
150
280
mV
280
1.1
0.9
mΩ
V
V
VCE = 5V, IC = 1mA
VCE = 5V, IC = 500mA
VCE = 5V, IC = 1A
IC = 100mA, IB = 1mA
IC = 500mA, IB = 50mA
IC = 1A, IB = 100mA
IC = 1A, IB = 100mA
IC = 1A, IB = 50mA
VCE = 5V, IC = 1A
Test Condition
VCB = 10V, f = 1.0MHz
VCE = 10V, IC = 50mA, f = 100MHz
IC = 100μA, IE = 0
IC = 10mA, IB = 0
IE = 100μA, IC = 0
VCB = 60V, IE = 0
VCB = 60V, IE = 0, TA = 150°C
VCE = 60V, VBE = 0
VEB = 5V, IC = 0
Collector-Emitter Saturation Voltage
VCE(SAT)
Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
RCE(SAT)
VBE(SAT)
VBE(ON)
⎯
⎯
⎯
⎯
⎯
⎯
Cobo
fT
⎯
150
⎯
⎯
10
⎯
pF
MHz
ton
td
tr
toff
ts
tf
⎯
⎯
⎯
⎯
⎯
⎯
63
33
30
420
380
40
⎯
⎯
⎯
⎯
⎯
⎯
ns
ns
ns
ns
ns
ns
VCC = 10V
IC = 0.5A, IB1 = IB2 = 25mA
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
Notes:
600
10
Pw = 1ms
500
IC, COLLECTOR CURRENT (A)
PD, POWER DISSIPATION (mW)
NEW PRODUCT
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage
400
300
200
RθJA = 313°C/W
100
0
0
1
0.1
Pw = 100ms
DC
0.01
0.001
25
50
75
100
125
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs.
Ambient Temperature (Note 3)
DSS4160U
Document number: DS31684 Rev. 2 - 2
150
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Pw = 10ms
0.1
1
10
100
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage (Note 3)
March 2009
© Diodes Incorporated
DSS4160U
1,000
1
TA = 85°C
400
T A = 25°C
200
VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
0
TA = -55°C
10
100
10,000
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain vs. Collector Current
1.2
VCE = 5V
1.0
0.8
T A = -55°C
0.6
T A = 25°C
TA = 85°C
0.2
TA = 150°C
0
0.1
1
10
100
1,000 10,000
IC, COLLECTOR CURRENT (mA)
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0.1
T A = 150°C
T A = 85°C
TA = 25°C
0.01
TA = -55°C
0.001
1
0.4
IC/IB = 10
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
600
0.1
1,000 10,000
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
800
1.2
IC/IB = 10
1.0
0.8
T A = -55°C
0.6
T A = 25°C
0.4
0.2
0
TA = 85°C
TA = 150°C
0.1
1
1,000 10,000
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
180
f = 1MHz
150
CAPACITANCE (pF)
NEW PRODUCT
VCE = 5V
T A = 150°C
120
90
Cibo
60
30
Cobo
0
0.1
1
10
100
VR, REVERSE VOLTAGE (V)
Fig. 7 Typical Capacitance Characteristics
DSS4160U
Document number: DS31684 Rev. 2 - 2
3 of 5
www.diodes.com
March 2009
© Diodes Incorporated
DSS4160U
NEW PRODUCT
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
RθJA(t) = r(t) * RθJA
R θJA = 310°C/W
D = 0.9
D = 0.02
0.01
P(pk)
D = 0.01
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t 1/t2
D = 0.005
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (s)
100
1,000
10,000
Fig. 8 Transient Thermal Response (Note 3)
Ordering Information
(Note 5)
Part Number
DSS4160U-7
Notes:
Case
SOT-323
Packaging
3000/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Date Code Key
Year
Code
Month
Code
2008
V
2009
W
Jan
1
Feb
2
YM
ZN9
ZN9 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
2010
X
Mar
3
Apr
4
2011
Y
May
5
Jun
6
2012
Z
Jul
7
2013
A
Aug
8
Sep
9
2014
B
Oct
O
2015
C
Nov
N
Dec
D
Package Outline Dimensions
A
B C
G
H
K
J
DSS4160U
Document number: DS31684 Rev. 2 - 2
M
D
L
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SOT-323
Dim
Min
Max
Typ
A
0.25
0.40
0.30
B
1.15
1.35
1.30
C
2.00
2.20
2.10
D
0.65
G
1.20
1.40
1.30
H
1.80
2.20
2.15
J
0.0
0.10
0.05
K
0.90
1.00
1.00
L
0.25
0.40
0.30
M
0.10
0.18
0.11
0°
8°
α
All Dimensions in mm
March 2009
© Diodes Incorporated
DSS4160U
Suggested Pad Layout
Y
NEW PRODUCT
Z
C
X
Dimensions Value (in mm)
Z
2.8
X
0.7
Y
0.9
C
1.9
E
1.0
E
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DSS4160U
Document number: DS31684 Rev. 2 - 2
5 of 5
www.diodes.com
March 2009
© Diodes Incorporated
