DSS4240Y
Features
Mechanical Data
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Epitaxial Planar Die Construction
Ideal for Low Power Amplification and Switching
Complementary PNP Type Available (DSS5240Y)
Ultra Small Surface Mount Package
“Lead Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free "Green" Device (Note 2)
ESD rating: 400V-MM, 8KV-HBM
Qualified to AEC-Q101 Standards for High Reliability
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•
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SOT363
Case: SOT363
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin annealed over Copper Plated Alloy
42 leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (approximate)
C
C
C
E
B
C
C
B
Top View
Pin Out Configuration
E
Top View
Device Schematic
Top View
Ordering Information (Note 3)
Product
DSS4240Y-7
Notes:
Marking
ZN8
Reel size (inches)
7
Tape width (mm)
8mm
Quantity per reel
3,000
1. No purposefully added lead.
2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
ZN8
Date Code Key
Year
Code
Month
Code
2010
X
Jan
1
YM
ADVANCE INFORMATION
40V LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
2011
Y
Feb
2
DSS4240Y
Document number: DS31682 Rev. 2 - 2
Mar
3
ZN8 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
2012
Z
Apr
4
May
5
2013
A
Jun
6
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Jul
7
2014
B
Aug
8
Sep
9
2015
C
Oct
O
Nov
N
Dec
D
March 2011
© Diodes Incorporated
DSS4240Y
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Peak Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
IBM
Value
40
40
5
2
3
0.3
Unit
V
V
V
A
A
A
Symbol
PD
RθJA
TJ, TSTG
Value
625
200
-55 to +150
Unit
mW
°C/W
°C
Thermal Characteristics
Characteristic
Power Dissipation (Note 4) @ TA = 25°C
Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Notes:
4. Device mounted on FR-4 PCB, with minimum recommended pad layout.
100
IC, COLLECTOR CURRENT (A)
0.8
PD, POWER DISSIPATION (W)
0.6
0.4
RθJA = 200°C/W
0.2
0
0
50
100
150
200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)
10
Pw = 100µs
1
0.1
0.01
0.001
0.1
1
10
100
VCE, COLLECTOR EMITTER VOLTAGE (V)
Fig. 2 Safe Operating Area
1
r(t), TRANSIENT THERMAL RESISTANCE
ADVANCE INFORMATION
Maximum Ratings @TA = 25°C unless otherwise specified
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
RθJA(t) = r(t) * RθJA
RθJA = 180°C/W
D = 0.02
0.01
D = 0.01
P(pk)
D = 0.005
t2
T J - T A = P * RθJA(t)
Duty Cycle, D = t1/t2
D = Single Pulse
0.001
0.00001
0.0001
t1
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
10
100
1,000
Fig. 3 Transient Thermal Response
DSS4240Y
Document number: DS31682 Rev. 2 - 2
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March 2011
© Diodes Incorporated
DSS4240Y
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Max
⎯
⎯
⎯
100
50
100
Unit
V
V
V
nA
μA
nA
hFE
350
300
300
150
Typ
150
55
8.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Symbol
BVCBO
BVCEO
BVEBO
⎯
⎯
⎯
⎯
⎯
Collector-Emitter Saturation Voltage (Note 5)
VCE(sat)
⎯
⎯
⎯
⎯
⎯
45
52
100
105
190
70
100
180
180
320
mV
Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
Output Capacitance
Current Gain-Bandwidth Product
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
RCE(sat)
VBE(sat)
VBE(on)
Cobo
fT
ton
td
tr
toff
ts
tf
⎯
⎯
⎯
⎯
100
⎯
⎯
⎯
⎯
⎯
⎯
105
⎯
⎯
⎯
250
64
20
44
315
275
40
200
1.1
0.75
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
mΩ
V
V
pF
MHz
ns
ns
ns
ns
ns
ns
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
DC Current Gain (Note 5)
Notes:
Min
40
40
5
⎯
⎯
⎯
Test Condition
IC = 100μA, IE = 0
IC = 10mA, IB = 0
IE = 100μA, IC = 0
VCB = 30V, IE = 0
VCB = 30V, IE = 0, TA = 150°C
VEB = 4V, IC = 0
VCE = 2V, IC = 100mA
VCE = 2V, IC = 500mA
VCE = 2V, IC = 1A
VCE = 2V, IC = 2A
IC = 100mA, IB = 1mA
IC = 500mA, IB = 50mA
IC = 750mA, IB = 15mA
IC = 1A, IB = 50mA
IC = 2A, IB = 200mA
IC = 500mA, IB = 50mA
IC = 2A, IB = 200mA
VCE = 2V, IC = 100mA
VCB = 10V, f = 1.0MHz
VCE = 10V, IC = 50mA, f = 100MHz
VCC = 10V
IC = 1A, IB1 = -IB2 = 50mA
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
2.4
1,200
2.0
1,000
IB = 5mA
hFE, DC CURRENT GAIN
IC, COLLECTOR CURRENT (A)
ADVANCE INFORMATION
Electrical Characteristics @TA = 25°C unless otherwise specified
IB = 4mA
1.6
IB = 3mA
1.2
IB = 2mA
0.8
VCE = -2V
TA = 150°C
TA = 125°C
800
TA = 85°C
600
TA = 25°C
400
IB = 1mA
T A = -55°C
0.4
200
0
0
1
2
3
4
5
6
7
8
9 10
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage
DSS4240Y
Document number: DS31682 Rev. 2 - 2
3 of 5
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0
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Fig. 5 Typical DC Current Gain vs. Collector Current
March 2011
© Diodes Incorporated
VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
DSS4240Y
1
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.1
TA = 150°C
TA = 125°C
T A = 85°C
TA = 25°C
0.01
TA = -55°C
0.001
0.001
1.2
VCE = 2V
1.0
0.8
T A = -55°C
0.6
T A = 25°C
0.4
T A = 85°C
T A = 125°C
0.2
TA = 150°C
0
0.0001
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Fig. 7 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.4
180
IC/IB = 10
1.2
150
1.0
CAPACITANCE (pF)
VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
ADVANCE INFORMATION
IC/IB = 10
0.8
TA = -55°C
0.6
T A = 25°C
TA = 85°C
0.4
f = 1MHz
120
90
60
Cibo
TA = 125°C
0.2
30
T A = 150°C
0
0.0001
0
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Fig. 8 Typical Base-Emitter Saturation Voltage
vs. Collector Current
Cobo
0
5
10
15
20
25
30
35
VR, REVERSE VOLTAGE (V)
Fig. 9 Typical Capacitance Characteristics
40
Package Outline Dimensions
A
SOT363
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Typ
F
0.40
0.45
H
1.80
2.20
J
0
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.22
0°
8°
α
All Dimensions in mm
B C
H
K
J
DSS4240Y
Document number: DS31682 Rev. 2 - 2
M
D
F
L
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DSS4240Y
Suggested Pad Layout
ADVANCE INFORMATION
C2
Z
C2
Dimensions Value (in mm)
Z
2.5
G
1.3
X
0.42
Y
0.6
C1
1.9
C2
0.65
C1
G
Y
X
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR
PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other
changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising
out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under
its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such
applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are
represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales
channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall
indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising
out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and
markings noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the
express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A.
B.
Life support devices or systems are devices or systems which:
1.
are intended to implant into the body, or
2.
support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in
the labeling can be reasonably expected to result in significant injury to the user.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems,
and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their
products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devicesor systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes
Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life
support devices or systems.
Copyright © 2011, Diodes Incorporated
www.diodes.com
DSS4240Y
Document number: DS31682 Rev. 2 - 2
5 of 5
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March 2011
© Diodes Incorporated
