DSS5160V
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR
NEW PRODUCT
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Features
Mechanical Data
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Epitaxial Planar Die Construction
Complementary NPN Type Available (DSS4160V)
Low Collector-Emitter Saturation Voltage, VCE(SAT)
Surface Mount Package Suited for Automated Assembly
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 1)
"Green Device" (Note 2)
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Case: SOT-563
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.003 grams (approximate)
1, 2, 5, 6
6
5
4
1
2
3
3
4
Bottom View
Top View
Maximum Ratings
Device Schematic
Pin Out Configuration
@TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Base Current (DC)
Peak Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
Value
-80
-60
-5
-1
-2
-300
-1
Unit
V
V
V
A
A
mA
A
Symbol
PD
RθJA
TJ, TSTG
Value
600
208
-55 to +150
Unit
mW
°C/W
°C
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
Notes:
1. No purposefully added lead.
2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
DSS5160V
Document number: DS31670 Rev. 2 - 2
1 of 5
www.diodes.com
March 2009
© Diodes Incorporated
DSS5160V
Electrical Characteristics
@TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
-80
-60
-5
⎯
⎯
⎯
Collector Cutoff Current
ICBO
⎯
⎯
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
ICES
IEBO
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-100
-50
-100
-100
V
V
V
nA
μA
nA
nA
DC Current Gain
hFE
200
150
100
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-160
-175
-330
mV
330
-1.1
-0.9
mΩ
V
V
VCE = -5V, IC = -1mA
VCE = -5V, IC = -500mA
VCE = -5V, IC = -1A
IC = -100mA, IB = -1mA
IC = -500mA, IB = -50mA
IC = -1A, IB = -100mA
IC = -1A, IB = -100mA
IC = -1A, IB = -50mA
VCE = -5V, IC = -1A
VCB = -10V, f = 1.0MHz
VCE = -10V, IC = -50mA, f = 100MHz
Collector-Emitter Saturation Voltage
VCE(SAT)
Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
RCE(SAT)
VBE(SAT)
VBE(ON)
⎯
⎯
⎯
⎯
⎯
⎯
Cobo
fT
⎯
150
⎯
⎯
15
⎯
pF
MHz
ton
td
tr
toff
ts
tf
⎯
⎯
⎯
⎯
⎯
⎯
80
35
45
260
225
35
⎯
⎯
⎯
⎯
⎯
⎯
ns
ns
ns
ns
ns
ns
Test Condition
IC = -100μA, IE = 0
IC = -10mA, IB = 0
IE = -100μA, IC = 0
VCB = -60V, IE = 0
VCB = -60V, IE = 0, TA = 150°C
VCE = -60V, VBE = 0
VEB = -5V, IC = 0
VCC = -10V
IC = -0.5A, IB1 = IB2 = -25mA
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
Notes:
10
600
500
-IC, COLLECTOR CURRENT (A)
PD, POWER DISSIPATION (mW)
NEW PRODUCT
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage
400
300
200
RθJA = 208°C/W
100
0
0
25
50
75
100
125
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs.
Ambient Temperature (Note 3)
DSS5160V
Document number: DS31670 Rev. 2 - 2
150
Pw = 10ms
1
0.1
Pw = 100ms
DC
0.01
0.001
0.1
2 of 5
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Pw = 1ms
1
10
100
-VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage (Note 3)
March 2009
© Diodes Incorporated
DSS5160V
800
1
-VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
hFE, DC CURRENT GAIN
600
TA = 150°C
TA = 85°C
400
T A = 25°C
200
TA = -55°C
1.0
0.8
T A = -55°C
0.6
T A = 25°C
0.4
TA = 85°C
0.2
T A = 150°C
0
0.1
1
10
100
1,000
-IC, COLLECTOR CURRENT (mA)
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
-VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
-VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
VCE = -5V
TA = 150°C
TA = 85°C
TA = 25°C
TA = -55°C
0.01
1,000
1
10
100
-IC, COLLECTOR CURRENT (mA)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1,000
10
100
-IC, COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain vs. Collector Current
1
1.2
0.1
0.001
0.1
0
1.2
IC/IB = 10
1.0
0.8
T A = -55°C
0.6
TA = 25°C
0.4
TA = 85°C
0.2
0
0.1
TA = 150°C
1
10
100
1,000
-IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
180
f = 1MHz
150
CAPACITANCE (pF)
NEW PRODUCT
VCE = -5V
120
90
Cibo
60
30
Cobo
0
0.1
1
10
100
VR, REVERSE VOLTAGE (V)
Fig. 7 Typical Capacitance Characteristics
DSS5160V
Document number: DS31670 Rev. 2 - 2
3 of 5
www.diodes.com
March 2009
© Diodes Incorporated
DSS5160V
NEW PRODUCT
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.9
RθJA(t) = r(t) * RθJA
RθJA = 178°C/W
D = 0.02
0.01
P(pk)
D = 0.01
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 /t2
D = 0.005
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (s)
100
1,000
10,000
Fig. 8 Transient Thermal Response (Note 3)
Ordering Information
(Note 5)
Part Number
DSS5160V-7
Notes:
Case
SOT-563
Packaging
3000/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
ZP9
Date Code Key
Year
Code
Month
Code
2008
V
Jan
1
2009
W
Feb
2
ZP9 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
YM
2010
X
Mar
3
Apr
4
2011
Y
May
5
2012
Z
Jun
6
Jul
7
2013
A
Aug
8
Sep
9
2014
B
Oct
O
2015
C
Nov
N
Dec
D
Package Outline Dimensions
A
B
C
D
G
M
K
SOT-563
Dim Min
Max
Typ
A
0.15 0.30 0.20
B
1.10 1.25 1.20
C
1.55 1.70 1.60
D
0.50
G
0.90 1.10 1.00
H
1.50 1.70 1.60
K
0.55 0.60 0.60
L
0.10 0.30 0.20
M
0.10 0.18 0.11
All Dimensions in mm
H
L
DSS5160V
Document number: DS31670 Rev. 2 - 2
4 of 5
www.diodes.com
March 2009
© Diodes Incorporated
DSS5160V
Suggested Pad Layout
C2
NEW PRODUCT
Z
C2
C1
G
Y
Dimensions Value (in mm)
Z
2.2
G
1.2
X
0.375
Y
0.5
C1
1.7
C2
0.5
X
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DSS5160V
Document number: DS31670 Rev. 2 - 2
5 of 5
www.diodes.com
March 2009
© Diodes Incorporated
