DZT851-13

NOT RECOMMENDED FOR NEW DESIGN USE ZXTN2010G DZT851 NEW PRODUCT NPN SURFACE MOUNT TRANSISTOR Features • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (DZT951) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Mechanical Data • • • • • • • SOT-223 Case: SOT-223 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish - Matte Tin annealed over Copper Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Marking & Type Code Information: See Page 3 Ordering Information: See Page 3 Weight: 0.115 grams (approximate) Maximum Ratings COLLECTOR BASE EMITTER TOP VIEW Schematic and Pin Configuration @TA = 25°C unless otherwise specified Symbol Value Collector-Base Voltage Characteristic VCBO 150 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 6 V IC 6 A Ptot 1(Note 3) 3(Note 4) W Tj, TSTG -55 to +150 °C Continuous Collector Current Power Dissipation Operating and Storage Temperature Range Notes: 1. 2. 3. 4. Unit No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Device mounted on FR-4 PCB, pad layout as shown on page 4. The power which can be dissipated, assuming the device is mounted in a typical manner on a PCB with copper equal to 4 square inch minimum. DS30738 Rev. 4 - 3 1 of 4 www.diodes.com DZT851 © Diodes Incorporated NEW PRODUCT NOT RECOMMENDED FOR NEW DESIGN USE ZXTN2010G Electrical Characteristics Characteristic @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 150 ⎯ ⎯ V IC = 100μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 60 ⎯ ⎯ V IC = 10mA*, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6 ⎯ Collector Cutoff Current ICBO ⎯ ⎯ ⎯ 50 1 Emitter Cutoff Current IEBO ⎯ ⎯ 10 V nA μA nA IE = 100μA, IC = 0 VCB = 120V, IE = 0 VCB = 120V, IE = 0, TA = 100°C VEB = 6V, IC = 0 Collector-Emitter Saturation Voltage VCE(SAT) ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 50 100 170 375 mV IC = 0.1A, IB = 5mA* IC = 1A, IB = 50mA* IC = 2A, IB = 50mA* IC = 6A, IB = 300mA* Base-Emitter Saturation Voltage VBE(SAT) ⎯ ⎯ 1200 mV IC = 6A, IB = 300mA* Base-Emitter Turn-On Voltage VBE(ON) ⎯ ⎯ 1150 mV ICE = 6A, VCE = 1V* hFE 100 100 75 25 ⎯ ⎯ ⎯ ⎯ ⎯ 300 ⎯ ⎯ ⎯ IC = 10mA, VCE = 1V* IC = 2A, VCE = 1V* IC = 5A, VCE = 1V* IC = 10A, VCE = 1V* fT ⎯ 130 ⎯ MHz Cobo ⎯ 45 ⎯ pF VCB = 10V, f = 1MHz ton toff ⎯ ⎯ 45 1100 ⎯ ⎯ ns IC = 1A, IB1 = 100mA IB2 = 100mA, VCC = 10V OFF CHARACTERISTICS ON CHARACTERISTICS DC Current Gain SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product Output Capacitance Switching Times * Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2% Typical Characteristics @Tamb = 25°C unless otherwise specified Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) Notes: 3. IC = 100mA, VCE = 10V, f = 50MHz Fig. 2 Collector Current vs. Collector Emitter Voltage Device mounted on FR-4 PCB, pad layout as shown on page 4. DS30738 Rev. 4 - 3 2 of 4 www.diodes.com DZT851 © Diodes Incorporated NEW PRODUCT NOT RECOMMENDED FOR NEW DESIGN USE ZXTN2010G Fig. 3 Typical DC Current Gain vs. Collector Current Fig. 4 Collector-Emitter Saturation Voltage vs. Collector Current Fig. 5 Base-Emitter Turn-On Voltage vs. Collector Current Fig. 6 Base-Emitter Saturation Voltage vs. Collector Current Ordering Information (Note 5) Device DZT851-13 Notes: Packaging SOT-223 Shipping 2500/Tape & Reel 5. Packaging Details as shown on page 4, or go to our website at http://www.diodes.com/ap2007.pdf. Marking Information DZT851 = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September Date Code Key Year Code Month Code DS30738 Rev. 4 - 3 2006 T Jan 1 2007 U Feb 2 Mar 3 2008 V Apr 4 May 5 2009 W Jun 6 3 of 4 www.diodes.com 2010 X Jul 7 Aug 8 2011 Y Sep 9 Oct O 2012 Z Nov N Dec D DZT851 © Diodes Incorporated NEW PRODUCT NOT RECOMMENDED FOR NEW DESIGN USE ZXTN2010G Package Outline Dimensions SOT-223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b1 2.90 3.10 3.00 b2 0.60 0.80 0.70 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e — — 4.60 e1 — — 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm Suggested Pad Layout: (Based on IPC-SM-782) (Unit:mm) IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30738 Rev. 4 - 3 4 of 4 www.diodes.com DZT851 © Diodes Incorporated