DZT951
NEW PRODUCT
PNP SURFACE MOUNT TRANSISTOR
Features
•
•
•
•
•
•
Epitaxial Planar Die Construction
Complementary NPN Type Available (DZT851)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
SOT-223
Mechanical Data
•
•
•
•
•
•
•
Case: SOT-223
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.115 grams (approximate)
COLLECTOR
BASE
EMITTER
TOP VIEW
Schematic and Pin Configuration
Maximum Ratings
@TA = 25°C unless otherwise specified
Symbol
Value
Unit
Collector-Base Voltage
Characteristic
VCBO
-100
V
Collector-Emitter Voltage
VCEO
-60
V
Emitter-Base Voltage
VEBO
-6
V
IC
-5
A
Ptot
1(Note 3)
3(Note 4)
W
Tj, TSTG
-55 to +150
°C
Continuous Collector Current
Power Dissipation
Operating and Storage Temperature Range
Notes:
1.
2.
3.
4.
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB, pad layout as shown on page 4.
The power which can be dissipated, assuming the device is mounted in a typical manner on a PCB with copper equal to 4 square inch minimum.
DS30786 Rev. 3 - 2
1 of 4
www.diodes.com
DZT951
© Diodes Incorporated
NEW PRODUCT
Electrical Characteristics
Characteristic
@TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
-100
⎯
⎯
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
-60
⎯
⎯
V
IC = -10mA*, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-6
⎯
Collector Cutoff Current
ICBO
⎯
⎯
⎯
-50
-1
Emitter Cutoff Current
IEBO
⎯
⎯
-10
V
nA
μA
nA
IE = -100μA, IC = 0
VCB = -80V, IE = 0
VCB = -80V, IE = 0, TA = 100°C
VEB = - 6V, IC = 0
VCE(SAT)
⎯
⎯
⎯
⎯
-20
-85
-155
-370
-50
-140
-210
-460
mV
IC = -100mA, IB = -10mA*
IC = -1A, IB = -100mA*
IC = -2A, IB = -200mA*
IC = -5A, IB = -500mA*
⎯
-1080
-1240
mV
IC = -5A, IB = -500mA*
OFF CHARACTERISTICS
IC = -100μA, IE = 0
B
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
B
B
B
B
Base-Emitter Saturation Voltage
VBE(SAT)
Base-Emitter Turn-On Voltage
VBE(ON)
⎯
-935
-1070
mV
ICE = -5A, VCE = -1V*
hFE
100
100
75
10
200
200
90
25
⎯
300
⎯
⎯
⎯
IC = -10mA, VCE = -1V*
IC = -2A, VCE = -1V*
IC = -5A, VCE = -1V*
IC = -10A, VCE = -1V*
fT
⎯
120
⎯
MHz
Cobo
⎯
74
⎯
pF
ton
toff
⎯
⎯
82
350
⎯
⎯
ns
DC Current Gain
B
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
IC = -100mA, VCE = -10V,
f = 50MHz
VCB = -10V, f = 1MHz
SWITCHING CHARACTERISTICS
Switching Times
*
Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%
Typical Characteristics
@Tamb = 25°C unless otherwise specified
Fig. 1 Power Dissipation VS. Ambient Temperature (Note 3)
Notes:
3.
IC = -2A, IB1 = -200mA
IB2 = +200mA, VCC = -10V
Fig. 2 Collector Current vs. Collector Emitter Voltage
Device mounted on FR-4 PCB, pad layout as shown on page 4.
DS30786 Rev. 3 - 2
2 of 4
www.diodes.com
DZT951
© Diodes Incorporated
NEW PRODUCT
Fig. 3 Typical DC Current Gain vs. Collector Current
Fig. 4 Collector-Emitter Saturation Voltage vs. Collector Current
Fig. 5 Base-Emitter Turn-On Voltage vs. Collector Current
Fig. 6 Base-Emitter Saturation Voltage vs. Collector Current
Ordering Information (Note 5)
Packaging
SOT-223
Device
DZT951-13
Notes:
Shipping
2500/Tape & Reel
5. Packaging Details as shown on page 4, or go to our website at http://www.diodes.com/ap2007.pdf.
Marking Information
DZT951 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
Date Code Key
Year
2006
T
Code
2007
U
2008
V
2009
W
2010
X
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Code
1
2
3
4
5
6
7
DS30786 Rev. 3 - 2
3 of 4
www.diodes.com
Aug
8
2011
Y
Sep
9
Oct
O
2012
Z
Nov
N
Dec
D
DZT951
© Diodes Incorporated
NEW PRODUCT
Package Outline Dimensions
SOT-223
Dim
Min
Max
Typ
A
1.55
1.65
1.60
A1
0.010
0.15
0.05
b1
2.90
3.10
3.00
b2
0.60
0.80
0.70
C
0.20
0.30
0.25
D
6.45
6.55
6.50
E
3.45
3.55
3.50
E1
6.90
7.10
7.00
e
—
—
4.60
e1
—
—
2.30
L
0.85
1.05
0.95
Q
0.84
0.94
0.89
All Dimensions in mm
Suggested Pad Layout: (Based on IPC-SM-782)
(Unit:mm)
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30786 Rev. 3 - 2
4 of 4
www.diodes.com
DZT951
© Diodes Incorporated
很抱歉,暂时无法提供与“DZT951-13”相匹配的价格&库存,您可以联系我们找货
免费人工找货