DZT951-13

DZT951-13

  • 厂商:

    BCDSEMI(美台)

  • 封装:

    SOT-223

  • 描述:

    TRANS PNP 60V 5A SOT-223

  • 数据手册
  • 价格&库存
DZT951-13 数据手册
DZT951 NEW PRODUCT PNP SURFACE MOUNT TRANSISTOR Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available (DZT851) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) SOT-223 Mechanical Data • • • • • • • Case: SOT-223 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish - Matte Tin annealed over Copper Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.115 grams (approximate) COLLECTOR BASE EMITTER TOP VIEW Schematic and Pin Configuration Maximum Ratings @TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage Characteristic VCBO -100 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -6 V IC -5 A Ptot 1(Note 3) 3(Note 4) W Tj, TSTG -55 to +150 °C Continuous Collector Current Power Dissipation Operating and Storage Temperature Range Notes: 1. 2. 3. 4. No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Device mounted on FR-4 PCB, pad layout as shown on page 4. The power which can be dissipated, assuming the device is mounted in a typical manner on a PCB with copper equal to 4 square inch minimum. DS30786 Rev. 3 - 2 1 of 4 www.diodes.com DZT951 © Diodes Incorporated NEW PRODUCT Electrical Characteristics Characteristic @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -100 ⎯ ⎯ V Collector-Emitter Breakdown Voltage V(BR)CEO -60 ⎯ ⎯ V IC = -10mA*, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -6 ⎯ Collector Cutoff Current ICBO ⎯ ⎯ ⎯ -50 -1 Emitter Cutoff Current IEBO ⎯ ⎯ -10 V nA μA nA IE = -100μA, IC = 0 VCB = -80V, IE = 0 VCB = -80V, IE = 0, TA = 100°C VEB = - 6V, IC = 0 VCE(SAT) ⎯ ⎯ ⎯ ⎯ -20 -85 -155 -370 -50 -140 -210 -460 mV IC = -100mA, IB = -10mA* IC = -1A, IB = -100mA* IC = -2A, IB = -200mA* IC = -5A, IB = -500mA* ⎯ -1080 -1240 mV IC = -5A, IB = -500mA* OFF CHARACTERISTICS IC = -100μA, IE = 0 B ON CHARACTERISTICS Collector-Emitter Saturation Voltage B B B B Base-Emitter Saturation Voltage VBE(SAT) Base-Emitter Turn-On Voltage VBE(ON) ⎯ -935 -1070 mV ICE = -5A, VCE = -1V* hFE 100 100 75 10 200 200 90 25 ⎯ 300 ⎯ ⎯ ⎯ IC = -10mA, VCE = -1V* IC = -2A, VCE = -1V* IC = -5A, VCE = -1V* IC = -10A, VCE = -1V* fT ⎯ 120 ⎯ MHz Cobo ⎯ 74 ⎯ pF ton toff ⎯ ⎯ 82 350 ⎯ ⎯ ns DC Current Gain B SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product Output Capacitance IC = -100mA, VCE = -10V, f = 50MHz VCB = -10V, f = 1MHz SWITCHING CHARACTERISTICS Switching Times * Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2% Typical Characteristics @Tamb = 25°C unless otherwise specified Fig. 1 Power Dissipation VS. Ambient Temperature (Note 3) Notes: 3. IC = -2A, IB1 = -200mA IB2 = +200mA, VCC = -10V Fig. 2 Collector Current vs. Collector Emitter Voltage Device mounted on FR-4 PCB, pad layout as shown on page 4. DS30786 Rev. 3 - 2 2 of 4 www.diodes.com DZT951 © Diodes Incorporated NEW PRODUCT Fig. 3 Typical DC Current Gain vs. Collector Current Fig. 4 Collector-Emitter Saturation Voltage vs. Collector Current Fig. 5 Base-Emitter Turn-On Voltage vs. Collector Current Fig. 6 Base-Emitter Saturation Voltage vs. Collector Current Ordering Information (Note 5) Packaging SOT-223 Device DZT951-13 Notes: Shipping 2500/Tape & Reel 5. Packaging Details as shown on page 4, or go to our website at http://www.diodes.com/ap2007.pdf. Marking Information DZT951 = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September Date Code Key Year 2006 T Code 2007 U 2008 V 2009 W 2010 X Month Jan Feb Mar Apr May Jun Jul Code 1 2 3 4 5 6 7 DS30786 Rev. 3 - 2 3 of 4 www.diodes.com Aug 8 2011 Y Sep 9 Oct O 2012 Z Nov N Dec D DZT951 © Diodes Incorporated NEW PRODUCT Package Outline Dimensions SOT-223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b1 2.90 3.10 3.00 b2 0.60 0.80 0.70 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e — — 4.60 e1 — — 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm Suggested Pad Layout: (Based on IPC-SM-782) (Unit:mm) IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30786 Rev. 3 - 2 4 of 4 www.diodes.com DZT951 © Diodes Incorporated
DZT951-13 价格&库存

很抱歉,暂时无法提供与“DZT951-13”相匹配的价格&库存,您可以联系我们找货

免费人工找货