DZTA92-13

DZTA92 PNP SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available (DZTA42) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) 3 2 1 4 SOT-223 Mechanical Data • • • • • • • COLLECTOR 3 E Case: SOT-223 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish - Matte Tin annealed over Copper Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Marking & Type Code Information: See Page 3 Ordering Information: See Page 3 Weight: 0.115 grams (approximate) Maximum Ratings C4 2,4 2 C 1 BASE 1 B 3 TOP VIEW EMITTER Schematic and Pin Configuration @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Continuous Collector Current Symbol VCBO VCEO VEBO IB IC Value -300 -300 -5 -100 -500 Unit V V V mA mA Symbol Value Unit Pd 1 RθJA 125 Tj, TSTG -55 to +150 Thermal Characteristics Characteristic Power Dissipation @ TA = 25°C (Note 3) Thermal Resistance, Junction to Ambient @ TA = 25°C (Note 3) Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cut-Off Current Emitter-Base Cut-Off Current ON CHARACTERISTICS (Note 4) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Min Typ Max Unit V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO -300 -300 -5 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -0.25 -0.1 V V V μA μA IC = -100μA, IE = 0 IC = -1mA, IB = 0 IE = -100μA, IC = 0 VCB = -200V, IE = 0 VEB = -3V, IC = 0 VCE(SAT) VBE(SAT) ⎯ ⎯ 25 40 25 ⎯ ⎯ ⎯ ⎯ ⎯ -0.5 -0.9 ⎯ ⎯ ⎯ V V IC = -20mA, IB = -2mA IC = -20mA, IB = -2mA IC = -1mA, VCE = -10V IC = -10mA, VCE = -10V IC = -30mA, VCE = -10V 50 ⎯ ⎯ ⎯ ⎯ 6 SMALL SIGNAL CHARACTERISTICS Gain-Bandwidth Product Output Capacitance fT Cobo 4. °C Symbol hFE 1. 2. 3. C/W @TA = 25°C unless otherwise specified DC Current Gain Notes: W ο V MHz pF Test Conditions IC = -10mA, VCE = -20V, f = 100MHz VCB = -20V, f = 1MHz No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Device mounted on FR-4 PCB, 1“ x 0.85” x 0.052”; pad layout as shown on page 4 or on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. Measured under pulsed conditions. Pulse Test: Pulse width, tp