FMMTA56TC

PART OBSOLETE - USE MMBTA56-7-F SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 5 – JUNE 2021 FMMTA56 ✪ OBSOLETE – PART DISCONTINUED PARTMARKING DETAIL FMMTA56 - 2G FMMTA56R - MB ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL FMMTA56 UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -80 V Emitter-Base Voltage VEBO -4 V Continuous Collector Current IC -500 mA Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). FMMTA56 PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Collector-Emitter Breakdown Voltage V(BR)CEO -80 V IC=-1mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO -4 V IE=-100µA, IC=0 Collector-Emitter Cut-Off Current ICES -0.1 µA VCE=-60V Collector-Base Cut-Off Current ICBO -0.1 µA VCB=-80V, IE=0 VCB=-60V, IE=0 Static Forward Current Transfer Ratio hFE Collector-Emitter Saturation Voltage VCE(sat) -0.25 V IC=-100mA, IB=-10mA* Base-Emitter Turn-On Voltage VBE(on) -1.2 V IC=-100mA, VCE=-1V* Transition Frequency fT MHz IC=-10mA, VCE=-2V f=100MHz 50 50 100 IC=-10mA, VCE=1V* IC=-100mA, VCE=1V* *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%