FZT2222ATA

FZT2222A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL VALUE MIN. Transition Frequency 300 fT UNIT CONDITIONS. MHz IC=20mA, VCE=20V f=100MHz MAX. Output Capacitance Cobo 8 pF VCB=10V, IE=0, f=140KHz Input Capacitance Cibo 25 pF VEB=0.5V, IC=0 f=140KHz Delay Time Rise Time td 10 ns tr 25 ns Storage Time ts 225 ns Fall Time tf 60 ns VCE=30V, VBE(off)=0.5V IC=150mA, IB1=15mA (See Delay Test Circuit) VCE=30V, IC=150mA IB1= IB2=15mA (See Storage Test Circuit) DELAY AND RISE – TEST CIRCUIT +30V 0 FZT2222A ISSUE 3 - OCTOBER 1995 FEATURES * 40 Volt VCEO * Fast switching C COMPLEMENTARY TYPE PARTMARKING DETAIL - FZT2907A FZT2222A E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO Continuous Collector Current IC Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 200Ω PARAMETER SYMBOL Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage VALUE 0.5V STORAGE TIME AND FALL TIME – TEST CIRCUIT 2 W -55 to+150 °C CONDITIONS. 75 V IC=10µA, IE=0 Scope: Rin > 100 k Ω Cin < 12 pF Rise Time < 5 ns V(BR)CEO 40 V IC=10mA, IB=0 * Emitter-Base Breakdown Voltage V(BR)EBO 6 V IE=10µA, IC=0 Collector Cut-Off Current ICBO 10 10 µA nA VCB=50V, IE=0 VCB=50V, IE=0, Tamb=150°C Emitter Cut-Off Current IEBO 10 nA VEB=3V, IC=0 Collector-Emitter Cut-Off Current ICEX 10 nA VCE=60V, VEB(off)=3V Collector-Emitter Saturation Voltage VCE(sat) 0.3 1.0 V V IC=150mA, IB=15mA* IC=500mA, IB=50mA* Base-Emitter Saturation Voltage VBE(sat) 0.6 1.2 2.0 V V IC=150mA, IB=15mA* IC=500mA, IB=50mA* Static Forward Current Transfer Ratio hFE 35 50 75 35 100 50 40 +30V 200Ω =100 µs