FZT4403TA

SOT223 PNP SILICON PLANAR SWITCHING TRANSISTOR ISSUE 4 – JUNE 1996 PARTMARKING DETAIL – FZT4403 ✪ FZT4403 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Continuous Collector Current IC -600 mA Power Dissipation at Tamb=25°C Ptot 1.5 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage MAX. UNIT CONDITIONS. V(BR)CBO -40 V IC=-0.1mA V(BR)CEO -40 V IC=-1mA Emitter Base Breakdown Voltage V(BR)EBO -5 V IE=-0.1mA Base Cut-off Current IBEX -0.1 µA VCE=-35V, VEB(OFF)=-0.4V Collector-Emitter Cut-off Current ICEX -0.1 µA VCE=-35V, VEB(OFF)=-0.4V Collector-Emitter Saturation Voltage VCE(sat) -0.4 -0.75 V V IC=-150mA, IB=-15mA* IC=-500mA, IB=-50mA* Base-Emitter Saturation Voltage VBE(sat) -0.75 -0.95 -1.3 V V IC=-150mA, IB=-15mA* IC=-500mA, IB=-50mA* Static Forward Current Transfer Ratio hFE 30 60 100 100 20 Transition Frequency fT Output Capacitance Cobo IC=-0.1mA, VCE=-1V IC=-1mA, VCE=-1V IC=-10mA, VCE=-1V IC=-150mA, VCE=-2V* IC=-500mA, VCE=-2V* 300 200 8.5 30 Input Capacitance Cibo *Measured under pulsed conditions. Pulse width=300µs. 3 - 300 MHz IC=-50mA, VCE=-5V f=100MHz pF VCB=-10V, f=100KHz IE=0 pF IC=0, f=100kHZ