FZT688BTA

SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT688B TYPICAL CHARACTERISTICS Tamb=25°C IC/IB=200 IC/IB=100 IC/IB=10 0.6 V V 0.4 0.2 0 0.01 0.1 1 IC - Collector Current (Amps) -55°C +25°C +100°C +175°C 0.8 - (Volts) - (Volts) 0.8 PARTMARKING DETAIL – COMPLEMENTARY TYPE - 0.4 ABSOLUTE MAXIMUM RATINGS. 0.2 10 0.01 0.1 1 IC - Collector Current (Amps) VCE(sat) v IC 0.6 500 0.4 0.2 - (Volts) 1.4 0.01 0.1 - (Volts) 0.4 VBE(sat) v IC 1.0 0.8 0.6 0.4 0.2 0 1 DC 1s 100ms 10ms 1ms 100µs 0.1 C 0.01 0.1 1 10 10 1.2 UNIT 12 V Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 10 A Continuous Collector Current IC 4 A Power Dissipation at Tamb=25°C Ptot 2 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C Collector Cut-Off Current 0.2 VCE=2V VALUE VCBO 0.6 hFE v IC -55°C +25°C +100°C +175°C SYMBOL Collector-Base Voltage 0.8 0.01 0.1 1 IC - Collector Current (Amps) 0.01 0.1V 10 1V 10V VCE - Collector Emitter Voltage (V) IC - Collector Current (Amps) Safe Operating Area VBE(on) v IC B PARAMETER Breakdown Voltages 0 E C FZT688B FZT788B PARAMETER IC - Collector Current (Amps) C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) 1.0 10 1 IC/IB=100 1.2 I -Collector Current (A) 1.6 0 1.4 V 0.8 - Typical Gain 1K -55°C +25°C +100°C +175°C 1.6 1.5K 1.0 0 0 V VCE=2V h - Normalised Gain h 1.4 1.2 10 VCE(sat) v IC +100°C +25°C -55°C 1.6 IC/IB=100 0.6 0 FZT688B ISSUE 3 - OCTOBER 1995 FEATURES * Extremely low equivalent on resistance; RCE(sat) 83mΩ at 3A * Gain of 400 at IC=3 Amps and very low saturation voltage APPLICATIONS * Flash gun convertors & Battery powered circuits 100V SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. V(BR)CBO 12 V IC=100µ A V(BR)CEO 12 V IC=10mA* V(BR)EBO 5 V IE=100µ A ICBO 0.1 µA VCB=10V Emitter Cut-Off Current IEBO 0.1 µA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.04 0.06 0.18 0.35 0.40 V V V V V IC=0.1A, IB=1mA IC=0.1A,IB=0.5mA* IC=1A, IB=50mA* IC=3A, IB=20mA* IC=4A, IB=50mA* Base-Emitter SaturationVoltage VBE(sat) 1.1 V IC=3A, IB=20mA* Base-Emitter Turn-On Voltage VBE(on) 1.0 V IC=3A, VCE=2V Static Forward Current Transfer Ratio hFE 500 400 100 Transition Frequency fT 150 Input Capacitance Cibo Output Capacitance Cobo Switching Times ton toff IC=0.1A, VCE=2V* IC=3A, VCE=2V* IC=10A, VCE=2V* MHz IC=50mA,VCE=5V f=50MHz 200 pF VEB=0.5Vf=1MHz 40 pF VCB=10V,f=1MHz 40 500 ns ns I C=500mA, IB1=50A *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 218 3 - 217 IB2=50mA, VCC=10V SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT688B TYPICAL CHARACTERISTICS Tamb=25°C IC/IB=200 IC/IB=100 IC/IB=10 0.6 V V 0.4 0.2 0 0.01 0.1 1 IC - Collector Current (Amps) -55°C +25°C +100°C +175°C 0.8 - (Volts) - (Volts) 0.8 PARTMARKING DETAIL – COMPLEMENTARY TYPE - 0.4 ABSOLUTE MAXIMUM RATINGS. 0.2 10 0.01 0.1 1 IC - Collector Current (Amps) VCE(sat) v IC 0.6 500 0.4 0.2 - (Volts) 1.4 0.01 0.1 - (Volts) 0.4 VBE(sat) v IC 1.0 0.8 0.6 0.4 0.2 0 1 DC 1s 100ms 10ms 1ms 100µs 0.1 C 0.01 0.1 1 10 10 1.2 UNIT 12 V Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 10 A Continuous Collector Current IC 4 A Power Dissipation at Tamb=25°C Ptot 2 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C Collector Cut-Off Current 0.2 VCE=2V VALUE VCBO 0.6 hFE v IC -55°C +25°C +100°C +175°C SYMBOL Collector-Base Voltage 0.8 0.01 0.1 1 IC - Collector Current (Amps) 0.01 0.1V 10 1V 10V VCE - Collector Emitter Voltage (V) IC - Collector Current (Amps) Safe Operating Area VBE(on) v IC B PARAMETER Breakdown Voltages 0 E C FZT688B FZT788B PARAMETER IC - Collector Current (Amps) C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) 1.0 10 1 IC/IB=100 1.2 I -Collector Current (A) 1.6 0 1.4 V 0.8 - Typical Gain 1K -55°C +25°C +100°C +175°C 1.6 1.5K 1.0 0 0 V VCE=2V h - Normalised Gain h 1.4 1.2 10 VCE(sat) v IC +100°C +25°C -55°C 1.6 IC/IB=100 0.6 0 FZT688B ISSUE 3 - OCTOBER 1995 FEATURES * Extremely low equivalent on resistance; RCE(sat) 83mΩ at 3A * Gain of 400 at IC=3 Amps and very low saturation voltage APPLICATIONS * Flash gun convertors & Battery powered circuits 100V SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. V(BR)CBO 12 V IC=100µ A V(BR)CEO 12 V IC=10mA* V(BR)EBO 5 V IE=100µ A ICBO 0.1 µA VCB=10V Emitter Cut-Off Current IEBO 0.1 µA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.04 0.06 0.18 0.35 0.40 V V V V V IC=0.1A, IB=1mA IC=0.1A,IB=0.5mA* IC=1A, IB=50mA* IC=3A, IB=20mA* IC=4A, IB=50mA* Base-Emitter SaturationVoltage VBE(sat) 1.1 V IC=3A, IB=20mA* Base-Emitter Turn-On Voltage VBE(on) 1.0 V IC=3A, VCE=2V Static Forward Current Transfer Ratio hFE 500 400 100 Transition Frequency fT 150 Input Capacitance Cibo Output Capacitance Cobo Switching Times ton toff IC=0.1A, VCE=2V* IC=3A, VCE=2V* IC=10A, VCE=2V* MHz IC=50mA,VCE=5V f=50MHz 200 pF VEB=0.5Vf=1MHz 40 pF VCB=10V,f=1MHz 40 500 ns ns I C=500mA, IB1=50A *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 218 3 - 217 IB2=50mA, VCC=10V