FZTA14TC

SOT223 NPN SILICON PLANAR DARLINGTON TRANSISTOR FZTA14 ISSUE 3 – JANUARY 1996 PARTMARKING DETAIL:- DEVICE TYPE IN FULL COMPLEMENTARY TYPE :- FZTA64 C E C B SOT223 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Emitter Voltage VCES 30 V Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 10 V Continuous Collector Current IC 1 A Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 2 W -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CES 30 Collector Cut-Off Current ICBO UNIT CONDITIONS. V IC=100µ A, VBE=0 100 nA VCB=30V, IE=0 Emitter Cut-Off Current IEBO 100 nA VEB=10V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) 1.5 1.6 V V IC=100mA, IB=0.1mA* IC=1A, IB=1mA* Base-Emitter Turn-On Voltage VBE(on) 2.0 V IC=100mA, VCE=5V* Base-Emitter Saturation Voltage VBE(sat) 2.0 2.2 V V IC=100mA, IB=0.1mA IC=1A, IB=1mA Static Forward Current hFE Transfer Ratio Transition Frequency fT TYP. MAX. IC=10mA, VCE=5V* IC=100mA, VCE=5V* IC=1A, VCE=5V* 10K 20K 5K 170 MHz *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device For typical characteristics graphs see FMMT38C datasheet. 3 - 301 IC=50mA, VCE=5V* f=20MHz