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GBJ2002-F

GBJ2002-F

  • 厂商:

    BCDSEMI(美台)

  • 封装:

    SIP4

  • 描述:

    RECT BRIDGE GPP 200V 20A GBJ

  • 数据手册
  • 价格&库存
GBJ2002-F 数据手册
GBJ20005 - GBJ2010 20A GLASS PASSIVATED BRIDGE RECTIFIER Features · · · · · · · Glass Passivated Die Construction GBJ High Case Dielectric Strength of 1500VRMS Dim Min Max Surge Overload Rating to 240A Peak A 29.70 30.30 Ideal for Printed Circuit Board Applications B 19.70 20.30 UL Listed Under Recognized Component Index, File Number E94661 L C 17.00 18.00 M D 3.80 4.20 Low Reverse Leakage Current Lead Free Finish/RoHS Compliant (Note 4) A K Mechanical Data · · · · · · · · · · B S _ Case: GBJ N J Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 D H I Moisture Sensitivity: Level 1 per J-STD-020C P C 7.30 7.70 9.80 10.20 H 2.00 2.40 I 0.90 1.10 J 2.30 2.70 3.0 X 45° K R Terminals: Plated Leads, Solderable per MIL-STD-202, Method 208 e3 Lead Free Plating (Tin Finish). E G L 4.40 4.80 M 3.40 3.80 3.40 N 3.10 Polarity: Molded on Body P 2.50 2.90 Mounting: Through Hole for #6 Screw R 0.60 0.80 S 10.80 11.20 G E E Mounting Torque: 5.0 in-lbs Maximum Marking: Type Number All Dimensions in mm Weight: 6.6 grams (approximate) Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified Single phase, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Forward Rectified Output Current @ TC = 110°C Symbol GBJ 20005 GBJ 2001 GBJ 2002 GBJ 2004 GBJ 2006 GBJ 2008 GBJ 2010 Unit VRRM VRWM VR 50 100 200 400 600 800 1000 V VR(RMS) 35 70 140 280 420 560 700 V IO 20 A Non-Repetitive Peak Forward Surge Current, 8.3 ms single half-sine-wave superimposed on rated load IFSM 240 A Forward Voltage per element VFM 1.05 V IR 10 500 µA I2 t 240 A2 s Peak Reverse Current at Rated DC Blocking Voltage @ IF = 10A @ TA = 25°C @ TC = 125°C I2t Rating for Fusing (t < 8.3 ms) (Note 1) Typical Total Capacitance per Element (Note 2) Typical Thermal Resistance Junction to Case (Note 3) Operating and Storage Temperature Range Notes: 1. 2. 3. 4. CT 60 pF RqJC 0.8 °C/W Tj, TSTG -55 to +150 °C Non-repetitive, for t > 1ms and < 8.3 ms. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. Unit mounted on 300 x 300 x 1.6mm Cu plate heat sink. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7. DS21220 Rev. 8 - 2 1 of 3 www.diodes.com GBJ20005-GBJ2010 ã Diodes Incorporated IF, INSTANTANEOUS FORWARD CURRENT (A) IO, AVERAGE RECTIFIED CURRENT (A) 25 20 With heatsink 15 10 Without heatsink 5 Resistive or Inductive load 0 25 50 75 100 125 150 100 10 1.0 0.1 Tj = 25°C 0.01 0.4 0 100 250 1.2 1.6 2.0 Tj = 25°C f = 1MHz Tj = 25°C Single half-sine-wave CT, TOTAL CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics (per element) TC, CASE TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve 200 150 100 50 0 1 1 100 10 10 1 NUMBER OF CYCLES AT 60 Hz Fig. 3 Maximum Non-Repetitive Surge Current 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Total Capacitance, Per Element 1000 Tj = 125°C 100 Tj = 100°C 10 Tj = 50°C 1.0 Tj = 25°C 0.1 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics DS21220 Rev. 8 - 2 2 of 3 www.diodes.com GBJ20005-GBJ2010 Ordering Information (Note 5) Notes: Device Packaging Shipping GBJ20005-F GBJ 15/Tube GBJ2001-F GBJ 15/Tube GBJ2002-F GBJ 15/Tube GBJ2004-F GBJ 15/Tube GBJ2006-F GBJ 15/Tube GBJ2008-F GBJ 15/Tube GBJ2010-F GBJ 15/Tube 5. For packaging details, visit our website at http://www.diodes.com/datasheets/ap2008.pdf. IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS21220 Rev. 8 - 2 3 of 3 www.diodes.com GBJ20005-GBJ2010
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