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IMX8-7

IMX8-7

  • 厂商:

    BCDSEMI(美台)

  • 封装:

    SOT23-6

  • 描述:

    TRANS 2NPN 120V 0.05A SOT26

  • 数据手册
  • 价格&库存
IMX8-7 数据手册
IMX8 DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR NEW PRODUCT SPICE MODEL: IMX8 Features · · · · Epitaxial Planar Die Construction Complementary PNP Type Available (IMT4) Small Surface Mount Package Also Available in Lead Free Version SOT-26 A B2 · · · · · · · C2 Case: SOT-26, Molded Plastic Case material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Also Available in Lead Free Plating (Matte Tin Finish). Please see Ordering Information, Note 4, on Page 2 Terminal Connections: See Diagram Marking (See Page 2): KX8 Ordering & Date Code Information: See Page 2 Weight: 0.016 grams (approx.) Maximum Ratings Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D ¾ ¾ 0.95 E1 B C Mechanical Data · · B1 E2 C1 H K M J D B2 B1 F L E1 F ¾ ¾ 0.55 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 a 0° 8° ¾ All Dimensions in mm C2 E2 C1 @ TA = 25°C unless otherwise specified Symbol IMX8 Unit Collector-Base Voltage Characteristic VCBO 120 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage VEBO 5.0 V Collector Current - Continuous IC 50 mA Power Dissipation (Note 1) Pd 300 mW RqJA 417 °C/W Tj, TSTG -55 to +150 °C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Electrical Characteristics Characteristic @ TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 120 ¾ ¾ V IC = 50mA Collector-Emitter Breakdown Voltage V(BR)CEO 120 ¾ ¾ V IC = 1.0mA Emitter-Base Breakdown Voltage OFF CHARACTERISTICS (Note 2) V(BR)EBO 5.0 ¾ ¾ V IE = 50mA Collector Cutoff Current ICBO ¾ ¾ 0.5 mA VCB = 100V Emitter Cutoff Current IEBO ¾ ¾ 0.5 mA VEB = 4.0V ON CHARACTERISTICS (Note 2) DC Current Gain Collector-Emitter Saturation Voltage hFE 180 ¾ 820 ¾ IC = 2.0mA, VCE = 6.0V VCE(SAT) ¾ ¾ 0.5 V IC = 10mA, IB = 1.0mA fT ¾ 140 ¾ MHz SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product VCE = 12V, IE = -2.0mA, f = 100MHz Notes: 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 200mW per element must not be exceeded. 2. Short duration test pulse used to minimize self-heating effect. DS30304 Rev. 3 - 2 1 of 3 www.diodes.com IMX8 ã Diodes Incorporated Device Packaging Shipping IMX8-7 SOT-26 3000/Tape & Reel Notes: 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 4. For Lead Free version (with Lead Free terminal finish) part number, please add "-F" suffix to part number above. Example: IMX8-7-F. Marking Information KX8 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September YM KX8 Date Code Key Year 2002 2003 2004 2005 2006 2007 2008 2009 Code N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D 600 Ta = 75°C 350 500 300 hFE, DC CURRENT GAIN PD, POWER DISSIPATION (mW) NEW PRODUCT Ordering Information (Note 3) 250 200 150 100 400 Ta = 25°C 300 Ta = -25°C 200 100 50 0 0 25 50 75 100 125 150 175 200 1.0 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature DS30304 Rev. 3 - 2 0 10.0 100 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs. Collector Current 2 of 3 www.diodes.com IMX8 100 IC, COLLECTOR CURRENT (mA) NEW PRODUCT Ta = 25°C 10.0 Ta = 75°C Ta = -25°C 1.0 0.1 0 0.2 0.1 0.3 0.4 0.5 0.7 0.6 0.8 0.9 1000 1.0 VCE = 5 Volts fT, GAIN BANDWIDTH PRODUCT (MHz) VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) VBE(ON), BASE-EMITTER VOLTAGE (V) Fig. 3 Typical Collector Current vs. Base-Emitter Voltage Ta = 150°C 0.100 Ta = 25°C Ta = -50°C 100 0.010 10 1 1 10 100 1000 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Gain Bandwidth Product vs. Collector Current IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Collector-Emitter Voltage vs. Collector Current IC, COLLECTOR CURRENT (mA) 6 5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 6 Typical Collector Current vs. Collector-Emitter Voltage DS30304 Rev. 3 - 2 3 of 3 www.diodes.com IMX8
IMX8-7 价格&库存

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