LMN200B02-7

LMN200B02 PART OBSOLETE - CONTACT US 200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET WITH GATE PULL DOWN RESISTOR OBSOLETE – PART DISCONTINUED General Description LMN200B02 is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators etc. particularly at a point of load. It features a discrete pass transistor with stable VCE(SAT) which does not depend on the input voltage and can support continuous maximum current of 200 mA . It also contains a discrete N-MOSFET that can be used as control. This N-MOSFET also has a built-in pull down resistor at its gate. The component can be used as a part of a circuit or as a stand alone discrete device. 6 5 4 1 2 3 Features • • • • • • Fig. 1: SOT-363 Voltage Controlled Small Signal Switch N-MOSFET with Gate Pull-Down Resistor Surface Mount Package Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) • • • • • • B_Q1 S_Q2 6 5 4 Q1 Mechanical Data • • C_Q1 PNP C DDTB142JU_DIE R2 B R3 470 37K E Case: SOT-363 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 8 Ordering Information: See Page 8 Weight: 0.006 grams (approximate) R1 S G 10K Q2 NMOS DSNM6047_DIE D 1 2 3 E_Q1 G_Q2 D_Q2 Fig. 2 Schematic and Pin Configuration Sub-Component P/N Reference Device Type R1 (NOM) R2 (NOM) R3 (NOM) Figure DDTB142JU_DIE DSNM6047_DIE (with Gate Pull-Down Resistor) Q1 PNP Transistor 10K 470  2 Q2 N-MOSFET   37K 2 Maximum Ratings, Total Device @TA = 25°C unless otherwise specified Symbol Value Power Dissipation (Note 3) Characteristic PD 200 mW Power Derating Factor above 125°C Pder 1.6 mW/°C Output Current Iout 200 mA Symbol Value Unit TJ,TSTG -55 to +150 °C RθJA 625 °C/W Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Operating and Storage Temperature Range Thermal Resistance, Junction to Ambient Air (Equivalent to One Heated Junction of PNP Transistor) (Note 3) Notes: Unit 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. LMN200B02 Document number: DS30658 Rev. 8 - 4 1 of 11 www.diodes.com October 2021 © Diodes Incorporated Maximum Ratings: Sub-Component Device: Pre-Biased PNP Transistor (Q1) OBSOLETE – PART DISCONTINUED Characteristic @TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Supply Voltage VCC -50 V Input Voltage Vin +5 to -6 V Output Current IC -200 mA Sub-Component Device: N-MOSFET With Gate Pull-Down Resistor (Q2) @TA = 25°C unless otherwise specified Symbol Value Unit Drain-Source Voltage Characteristic VDSS 60 V Drain Gate Voltage (RGS ≤1M Ohm) VDGR 60 V Gate-Source Voltage Drain Current (Page 1: Note 3) Continuous Pulsed (tp