MBR10100C

Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER General Description High voltage dual Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required. The MBR10100C is available in standard TO-220F-3, TO-220-3 and TO-220-3 (2) packages. MBR10100C Main Product Characteristics IF(AV) VRRM TJ VF(max) 2*5A 100V 150°C 0.75V Mechanical Characteristics Features • • • • • High Surge Capacity 150°C Operating Junction Temperature 10A Total (5A Per Diode Leg) Guard-Ring foe Stress Protection Pb- Free Packages are available • • • • • • Case: Epoxy, Molded Epoxy Meets UL 94 V-0@ 0.125 in Weight (Approximately): 1.9 Grams (TO-220-3, TO-220-3(2) TO-220F-3) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds and Applications • • • Power Supply − Output Rectification Power Management Instrumentation TO-220F-3 TO-220-3 TO-220-3 (2) Figure 1. Package Type of MBR10100C Apr. 2009 Rev. 1. 1 1 BCD Semiconductor Manufacturing Limited Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Pin Configuration T Package (TO-220-3) (TO-220-3 (2)) MBR10100C TF Package (TO-220F-3) Figure 2. Pin Configuration of MBR10100C (Top View) Figure 3. Internal Structure of MBR10100C Apr. 2009 Rev. 1. 1 2 BCD Semiconductor Manufacturing Limited Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Ordering Information MBR10100C - MBR10100C Circuit Type Package T: TO-220-3/TO-220-3 (2) TF: TO-220F-3 E1: Lead Free G1: Green Blank: Tube Package TO-220-3/ TO-220-3 (2) TO-220F-3 Part Number Lead Free MBR10100CT-E1 MBR10100CTF-E 1 Marking ID Lead Free MBR10100CT-E1 MBR10100CTF-E1 Green MBR10100CTG1 MBR10100CTF -G1 Green MBR10100CTG1 MBR10100CTF -G1 Packing Type Tube Tube BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with “G1” suffix are available in green packages. Absolute Maximum Ratings ( Per Diode Leg) (Note 1) Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC = 138°C Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 138°C Non repetitive Peak Surge Current (Surge applied at rated load conditions half wave, single phase, 60Hz) Operating Junction Temperature Range（Note 2） Storage Temperature Range Voltage Rate of Change (Rated VR) ESD Ratings: Machine Model = C Human Body Model =3B Symbol VRRM VRWM VR IF(AV) IFRM IFSM TJ TSTG dv/dt Value 100 5 10 100 150 -55 to 150 10000 > 400 > 8000 Unit V A A A °C °C V/µs V Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability. Note 2: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/θJA. Apr. 2009 Rev. 1. 1 3 BCD Semiconductor Manufacturing Limited Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Recommended Operating Conditions Parameter Symbol θJC Maximum Thermal Resistance θJA Junction to Ambient MBR10100C Condition Junction to Case Value TO-220-3/ TO-220-3 (2) TO-220F-3 TO-220-3/ TO-220-3 (2) TO-220F-3 3.0 4.5 60 60 Unit °C/W Electrical Characteristics Parameter Maximum Instantaneous Forward Voltage Drop (Note 3) Symbol Conditions IF=5A, TC=25°C IF=5A, TC=125°C IF=10 A, TC=25°C IF=10A, TC=125°C Value 0.85 0.75 0.95 0.85 6.0 Units VF V Maximum Instantaneous Reverse Current (Note 3) IR Rated DC TC=125°C Rated DC TC=25°C Voltage, Voltage, mA 0.1 Note 3: Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2.0%. Apr. 2009 Rev. 1. 1 4 BCD Semiconductor Manufacturing Limited Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Typical Performance Characteristics MBR10100C 100 10000 Instantaneous Reverse Current(µA) 1000 TJ=150 C 0 Instantaneous Forward Current(A) 10 100 TJ=150 C 1 0 TJ=125 C 10 0 TJ=125 C 0.1 0 1 0.1 TJ=25 C 0.01 0 0.01 0.1 TJ=25C 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1E-3 0 20 40 60 80 100 Instantaneous Forward Voltage(V) Percent of Rated Peak Reverse Voltage(%) Figure 4. Typical Forward Voltage Per Diode Figure 5. Typical Reverse Current Per Diode 10 9 Average Forward Current (AMPS) 8 7 6 5 4 3 2 1 0 100 105 110 115 120 125 130 135 140 145 150 155 Case Temperature (°C) Figure6. Average Forward Current vs. Case Temperature (Per Diode) Apr. 2009 Rev. 1. 1 5 BCD Semiconductor Manufacturing Limited Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Mechanical Dimensions TO-220-3 9.660(0.380) 10.660(0.420) φ3.560(0.140) 4.060(0.160) 2.580(0.102) 3.380(0.133) MBR10100C Unit: mm(inch) 0.550(0.022) 1.350(0.053) 0.200(0.008) 7° φ1.500(0.059) 3.560(0.140) 4.820(0.190) 2.080(0.082) 2.880(0.113) 3° 7° 1.160(0.046) 1.760(0.069) 60° 0.813(0.032) 0.381(0.015) 8.763(0.345) 60° 0.381(0.015) 2.540(0.100) 2.540(0.100) 0.356(0.014) 0.406(0.016) Apr. 2009 Rev. 1. 1 6 BCD Semiconductor Manufacturing Limited Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Mechanical Dimensions (Continued) TO-220-3(2) 9.800(0.386) 10.200(0.402) 1.700(0.067) ∅ 3.560(0.140) MBR10100C Unit: mm(inch) 3.640(0.143) 0.600(0.024) 1.300(0.051) 1.300(0.051) 3° 4.500(0.177) 2.400(0.094) 3° 3° 1.270(0.050) 0.700(0.028) 0.900(0.035) 2.540(0.100) 2.540(0.100) 0.400(0.016) 0.600(0.024) Apr. 2009 Rev. 1. 1 7 BCD Semiconductor Manufacturing Limited Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Mechanical Dimensions (Continued) TO-220F-3 9.700(0.382) 10.300(0.406) 3.000(0.119) 3.550(0.140) 6.900(0.272) 7.100(0.280) MBR10100C Unit: mm(inch) 3.000(0.119) 3.400(0.134) 2.350(0.093) 2.900(0.114) 3.370(0.133) 3.900(0.154) 14.700(0.579) 16.000(0.630) 4.300(0.169) 4.900(0.075) 2.790(0.110) 4.500(0.177) 12.500(0.492) 13.500(0.531) 0.550(0.022) 0.900(0.035) 2.540(0.100) 1.000(0.039) 1.400(0.055) 1.100(0.043) 1.500(0.059) 2.540(0.100) 0.450(0.018) 0.600(0.024) Apr. 2009 Rev. 1. 1 8 BCD Semiconductor Manufacturing Limited