MBRD835L-T

MBRD835L 8A LOW VF SCHOTTKY BARRIER RECTIFIER SPICE MODEL: MBRD835L NEW PRODUCT Features · · · · · · Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability Very Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications Plastic Material: UL Flammability Classification Rating 94V-0 G P H 4 2 3 M Mechanical Data · · · Case: DPAK Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Marking: Type Number Weight: 0.4 grams (approx.) Maximum Ratings J B 1 · · DPAK E A D K C L PIN 1 PIN 4, BOTTOMSIDE HEAT SINK PIN 3 Note: Pins 1 & 3 must be electrically connected at the printed circuit board. Dim Min Max A 6.3 6.7 B ¾ 10 C 0.3 0.8 D 2.3 Nominal E 2.1 2.5 G 0.4 0.6 H 1.2 1.6 5.7 J 5.3 K 0.5 Nominal L 1.3 1.8 M 1.0 ¾ P 5.1 5.5 All Dimensions in mm @ TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Symbol Value Unit VRRM VRWM VR 35 V VR(RMS) 25 V @ TC = 88°C IF(AV) 8 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave Superimposed on Rated Load (JEDEC Method) IFSM 75 A Typical Thermal Resistance Junction to Case (Note 2) RqJC 6.0 °C/W Typical Thermal Resistance Junction to Ambient (Note 2) RqJA 80 °C/W Tj -65 to +125 °C TSTG -65 to +150 °C RMS Reverse Voltage Average Rectified Forward Current Operating Temperature Range Storage Temperature Range Electrical Characteristics @ TA = 25°C unless otherwise specified Symbol Min Typ Max Unit V(BR)R 35 ¾ ¾ V IR = 1mA Forward Voltage (Note 1) VFM ¾ ¾ 0.48 ¾ 0.51 0.41 V IF = 8A, TS = 25°C IF = 8A, TS = 125°C Peak Reverse Current (Note 1) IRM ¾ ¾ 0.1 ¾ 1.4 35 mA TS = 25°C, VR = 35V TS = 100°C, VR = 35V Junction Capacitance Cj ¾ 600 ¾ pF f = 1.0MHz, VR = 4.0V DC Characteristic Reverse Breakdown Voltage (Note 1) Notes: Test Condition 1. Short duration test pulse used to minimize self-heating effect. 2. Mounted on PC board with 14mm2 (.013mm thick) copper pad areas. DS30284 Rev. B-2 1 of 2 www.diodes.com MBRD835L ã Diodes Incorporated 100 IF, INSTANTANEOUS FORWARD CURRENT (A) IF(AV), AVERAGE FORWARD CURRENT (A) 15.0 Tj = 125°C 12.5 IPK IAV 10.0 7.5 5.0 2.5 0 60 70 90 80 110 100 120 10 TA = +125°C TA = +25°C 0.1 0.01 0.001 0.0001 0 130 Cj, JUNCTION CAPACITANCE (pF) 300 400 600 500 1 TA = +100ºC TA = +75ºC 0.1 0.01 TA = +25ºC f = 1MHz 1000 100 0.001 0 10 5 15 20 25 30 35 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 3 Typical Reverse Characteristics 5 dc 4 Tj = 125°C 3.5 3 2.5 2 1.5 SURFACE MOUNTED ON MINIMUM RECOMMENDED PAD SIZE 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 10 15 20 25 30 35 40 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance vs. Reverse Voltage TA, AMBIENT TEMPERATURE (°C) Fig. 5 Current Derating, Free Air DS30284 Rev. B-2 5 0 40 PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) IR, INSTANTANEOUS REVERSE CURRENT (mA) TA = +125ºC 0.5 200 10,000 10 1 100 VF, INSTANTANEOUS FORWARD VOLTAGE (mV) Fig. 2 Typical Forward Characteristics 100 4.5 TA = +100°C 1 TC, CASE TEMPERATURE (°C) Fig. 1 Current Derating, Infinite Heatsink IF(AV), AVERAGE FORWARD CURRENT (A) NEW PRODUCT 17.5 2 of 2 www.diodes.com 8 Tj = 125°C 7 6 dc 5 4 3 2 1 0 0 3 4.5 6 7.5 9 10.5 12 13.5 15 IF(AV), AVERAGE FORWARD CURRENT (A) Fig. 6 Forward Power Dissipation 1.5 MBRD835L