MBRM3100-13-F

MBRM3100 3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERMITEâ3 SPICE MODEL: MBRM3100 NEW PRODUCT Features · · · · Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Reverse Breakdown Voltage For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications G P 3 Mechanical Data · · · · · · · · Case: POWERMITEâ3, Molded Plastic Plastic Material: UL Flammability Classification Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Marking: See Page 3 Weight: 0.072 grams (approx.) Ordering Information: See Page 3 J B 1 H M D K C C L PIN 1 PIN 3, BOTTOMSIDE HEAT SINK PIN 2 Dim Min Max A 4.03 4.09 B 6.40 6.61 C .864 .914 1.83 NOM D 2 irNote: Maximum Ratings POWERMITEâ3 E A Pins 1 & 2 must be electrically connected at the printed circuit board. E 1.10 1.14 G .173 .203 H 5.01 5.17 J 4.37 4.43 K .173 .203 L .71 .77 M .36 .46 P 1.73 1.83 All Dimensions in mm @ TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbol Value Unit VRRM VRWM VR 100 V VR(RMS) 70 V IO 3 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave Superimposed on Rated Load (JEDEC Method) @ TC = 90°C IFSM 50 A Typical Thermal Resistance Junction to Soldering Point RqJS 3.5 °C/W Typical Thermal Resistance Junction to Case RqJC 1.6 °C/W Tj -55 to +125 °C TSTG -55 to +150 °C Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Also see Figure 5) Operating Temperature Range Storage Temperature Range Electrical Characteristics @ TA = 25°C unless otherwise specified Symbol Min Typ Max Unit V(BR)R 100 ¾ ¾ V IR = 0.2mA Forward Voltage (Note 1) VF ¾ ¾ ¾ ¾ 0.72 0.60 0.80 0.69 0.76 ¾ ¾ ¾ V IF = 3A, Tj = 25°C IF = 3A, Tj = 100°C IF = 6A, Tj = 25°C IF = 6A, Tj = 100°C Reverse Current (Note 1) IR ¾ ¾ 3 0.35 100 20 mA mA Tj = 25°C, VR = 100V Tj = 100°C, VR = 100V Total Capacitance CT ¾ 100 ¾ pF f = 1.0MHz, VR = 4.0V DC Characteristic Reverse Breakdown Voltage (Note 1) Notes: Test Condition 1. Short duration test pulse used to minimize self-heating effect. DS30354 Rev. 4 - 2 1 of 3 www.diodes.com MBRM3100 ã Diodes Incorporated IF, INSTANTANEOUS FORWARD CURRENT (A) 10,000 1000 Tj = 100°C Tj = 125°C Tj = 100°C 1.0 100 Tj = 25°C Tj = 75°C 10 0.1 1.0 0.01 Tj = 25°C 0.1 0 0.2 0.4 0.6 0.8 1.0 0 40 20 60 80 100 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 2 Typical Reverse Characteristics VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 1 Typical Forward Characteristics 1000 50 f = 1MHz Tj = 25°C Single Half-Sine-Wave (JEDEC Method) 40 CT, TOTAL CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) NEW PRODUCT 10 TC = 90°C 30 20 10 100 10 0 1 10 100 NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Peak Fwd Surge Current DS30354 Rev. 4 - 2 2 of 3 www.diodes.com 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Total Capacitance vs. Reverse Voltage MBRM3100 PF, FORWARD POWER DISSIPATION (W) IF, DC FORWARD CURRENT (A) NEW PRODUCT 4 3.5 Note 2 3 2.5 Note 3 2 1.5 1 Note 4 0.5 Tj = 125°C Note 6 3 2 1 Note 5 0 0 25 125 75 100 50 TA, AMBIENT TEMPERATURE (°C) Fig. 5 DC Forward Current Derating Ordering Information Notes: 4 0 150 1 2 3 4 5 6 7 IF, FORWARD CURRENT (A) Fig. 6 Forward Power Dissipation (Note 7) Device Packaging Shipping MBRM3100-13 POWERMITEâ3 5000/Tape & Reel 2. TA = TSOLDERING POINT, RqJS = 3.5°C/W, RqSA = 0°C/W. 3. Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad dimensions 0.25” x 1.0”. RqJA in range of 30-35°C/W. 4. Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. RqJA in range of 115-125°C/W. 5. Maximum power dissipation when the device is mounted in accordance to the conditions described in Note 4. 6. Maximum power dissipation when the device is mounted in accordance to the conditions described in Note 3. 7. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information MBRM3100 YYWW(K) MBRM3100 = Product type marking code = Manufacturers’ code marking YYWW = Date code marking YY = Last digit of year ex: 02 for 2002 WW = Week code 01 to 52 (K) = Factory Designator POWERMITE is a registered trademark of Microsemi Corporation. DS30354 Rev. 4 - 2 3 of 3 www.diodes.com MBRM3100