MMBD4448HW-7-F

MMBD4448HW-7-F

  • 厂商:

    BCDSEMI(美台)

  • 封装:

    SOT-323

  • 描述:

    MMBD4448HW-7-F

  • 详情介绍
  • 数据手册
  • 价格&库存
MMBD4448HW-7-F 数据手册
MMBD4448HW SURFACE MOUNT SWITCHING DIODE Features Mechanical Data • • • • • • • • Fast Switching Speed Surface Mount Package Ideally Suited for Automated Insertion For General Purpose Switching Applications High Conductance Lead Free/RoHS Compliant (Note 1) "Green" Device (Notes 2 and 3) • • • • Case: SOT-323 Case Material: Molded Plastic, "Green" Molding Compound (Note 3). UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Weight: 0.006 grams (approximate) SOT-323 Top View Internal Schematic Top View Ordering Information (Notes 3 & 4) Part Number MMBD4448HW-7-F Notes: Case SOT-323 Packaging 3000/Tape & Reel 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. 4. For packaging details, go to our website at http://www.diodes.com. Date Code Key Year 2000 Code L 2001 M 2002 N 2003 P 2004 R KA1 YM Marking Information 2005 S 2006 T KA1= Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) 2007 U 2008 V 2009 W 2010 X 2011 Y 2012 Z 2013 A 2014 B 2015 C Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D MMBD4448HW Document number: DS30228 Rev. 8 - 2 1 of 4 www.diodes.com February 2011 © Diodes Incorporated MMBD4448HW Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Non-Repetitive Peak Reverse Voltage Symbol VRM VRRM VRWM VR VR(RMS) IFM IO Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current (Note 5) Average Rectified Output Current (Note 5) Non-Repetitive Peak Forward Surge Current Value 100 Unit V 80 V V mA mA IFSM 57 500 250 4.0 1.0 Symbol PD RθJA TJ, TSTG Value 200 625 -65 to +150 Unit mW °C/W °C @ t = 1.0μs @ t = 1.0s A Thermal Characteristics Characteristic Power Dissipation (Note 5) Thermal Resistance Junction to Ambient Air (Note 5) Operating and Storage Temperature Range Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Reverse Breakdown Voltage (Note 6) Symbol V(BR)R Min 80 0.62 ⎯ ⎯ ⎯ Max ⎯ Unit V 0.72 0.855 1.0 1.25 V Forward Voltage VF Peak Reverse Current (Note 6) IR ⎯ 100 50 30 25 nA μA μA nA Total Capacitance Reverse Recovery Time CT trr ⎯ ⎯ 3.5 4.0 pF ns Notes: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com. 6. Short duration pulse test used to minimize self-heating effect. IF, INSTANTANEOUS FORWARD CURRENT (mA) 250 PD, POWER DISSIPATION (mW) Test Condition IR = 2.5μA IF = 5.0mA IF = 10mA IF = 100mA IF = 150mA VR = 70V VR = 75V, TJ = 150°C VR = 25V, TJ = 150°C VR = 20V VR = 6V, f = 1.0MHz VR = 6V, IF = 5mA 200 150 100 50 0 0 160 80 120 40 TA, AMBIENT TEMPERATURE (° C) Fig. 1 Power Derating Curve (Note 5) MMBD4448HW Document number: DS30228 Rev. 8 - 2 1,000 200 2 of 4 www.diodes.com 100 10 1 0.1 0 0.4 0.8 1.2 1.6 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics February 2011 © Diodes Incorporated MMBD4448HW 3.0 f = 1MHz CT, TOTAL CAPACITANCE (pF) IR, INSTANTANEOUS REVERSE CURRENT (nA) 10,000 1,000 100 10 1 2.5 2.0 1.5 1.0 0.5 0 0.1 20 0 40 60 80 100 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 3 Typical Reverse Characteristics 0 10 20 30 40 VR, DC REVERSE VOLTAGE (V) Fig. 4 Total Capacitance vs. Reverse Voltage Package Outline Dimensions A SOT-323 Dim Min Max Typ A 0.25 0.40 0.30 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.65 G 1.20 1.40 1.30 H 1.80 2.20 2.15 J 0.0 0.10 0.05 K 0.90 1.00 1.00 L 0.25 0.40 0.30 M 0.10 0.18 0.11 0° 8° α All Dimensions in mm B C G H K M J L D Suggested Pad Layout Y Z C X MMBD4448HW Document number: DS30228 Rev. 8 - 2 Dimensions Value (in mm) Z 2.8 X 0.7 Y 0.9 C 1.9 E 1.0 E 3 of 4 www.diodes.com February 2011 © Diodes Incorporated MMBD4448HW IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2011, Diodes Incorporated www.diodes.com MMBD4448HW Document number: DS30228 Rev. 8 - 2 4 of 4 www.diodes.com February 2011 © Diodes Incorporated
MMBD4448HW-7-F
1. 物料型号:型号为EL817,是一款光耦器件。 2. 器件简介:EL817是一种通用型晶体管输出光耦器件,具有高隔离电压和快速响应时间。 3. 引脚分配:EL817有6个引脚,分别为1脚为发光二极管正极,2脚为发光二极管负极,3脚为输出晶体管集电极,4脚为输出晶体管发射极,5脚为输出晶体管基极,6脚为Vcc。 4. 参数特性:工作温度范围为-20℃至+85℃,隔离电压为5000Vrms,输入电流为16mA,输出晶体管电流增益为100%。 5. 功能详解:EL817通过光电效应实现电信号隔离,输入端发光二极管发光,光信号被输出端的光敏晶体管接收并转换为电信号。 6. 应用信息:EL817适用于工业控制系统中的信号隔离,如PLC、变频器等。 7. 封装信息:EL817采用DIP-6封装,尺寸为9.1mm x 3.6mm x 4.9mm。
MMBD4448HW-7-F 价格&库存

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