MMBT3904-13

MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · · Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT3906) Ideal for Medium Power Amplification and Switching SOT-23 A Dim Min Max A 0.37 0.51 B 1.19 1.40 C 2.10 2.50 D 0.89 1.05 E 0.45 0.61 G G 1.78 2.05 H H 2.65 3.05 J 0.013 0.15 K 0.89 1.10 L 0.45 0.61 M 0.076 0.178 C TOP VIEW · · · · · Case: SOT-23, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: K1N, R1A, 1AM Weight: 0.008 grams (approx.) C E B Mechanical Data B D E M K J L All Dimensions in mm Maximum Ratings @ TA = 25°C unless otherwise specified Symbol MMBT3904 Unit Collector-Base Voltage Characteristic VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V Collector Current - Continuous (Note 1) IC 200 mA Power Dissipation (Note 1) Pd 350 mW RqJA 357 K/W Tj, TSTG -55 to +150 °C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width £ 300ms, duty cycle £ 2%. DS30036 Rev. E-2 1 of 2 MMBT3904 Electrical Characteristics Characteristic @ TA = 25°C unless otherwise specified Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 60 ¾ V Collector-Emitter Breakdown Voltage V(BR)CEO 40 ¾ V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 5.0 ¾ V IE = 10mA, IC = 0 ICEX ¾ 50 nA VCE = 30V, VEB(OFF) = 3.0V IBL ¾ 50 nA VCE = 30V, VEB(OFF) = 3.0V hFE 40 70 100 60 30 ¾ ¾ 300 ¾ ¾ Collector-Emitter Saturation Voltage VCE(SAT) ¾ 0.20 0.30 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Base- Emitter Saturation Voltage VBE(SAT) 0.65 ¾ 0.85 0.95 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Output Capacitance Cobo ¾ 4.0 pF VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo ¾ 8.0 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.0 10 kW Voltage Feedback Ratio hre 0.5 8.0 x 10-4 Small Signal Current Gain hfe 100 400 ¾ Output Admittance hoe 1.0 40 mS Current Gain-Bandwidth Product fT 300 ¾ MHz VCE = 20V, IC = 10mA, f = 100MHz Noise Figure NF ¾ 5.0 dB VCE = 5.0V, IC = 100mA, RS = 1.0kW, f = 1.0kHz Delay Time td ¾ 35 ns Rise Time tr ¾ 35 ns Storage Time ts ¾ 200 ns Fall Time tf ¾ 50 ns OFF CHARACTERISTICS (Note 2) Collector Cutoff Current Base Cutoff Current IC = 10mA, IE = 0 ON CHARACTERISTICS (Note 2) DC Current Gain ¾ IC = 100µA, VCE = IC = 1.0mA, VCE = IC = 10mA, VCE = IC = 50mA, VCE = IC = 100mA, VCE = 1.0V 1.0V 1.0V 1.0V 1.0V SMALL SIGNAL CHARACTERISTICS VCE = 10V, IC = 1.0mA, f = 1.0kHz SWITCHING CHARACTERISTICS Notes: VCC = 3.0V, IC = 10mA, VBE(off) = - 0.5V, IB1 = 1.0mA VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width £ 300ms, duty cycle £ 2%. DS30036 Rev. E-2 2 of 2 MMBT3904