MMDT3906VC-7

MMDT3906VC NEW PRODUCT Lead-free Green DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Planar Die Construction A Ideal for Low Power Amplification and Switching B2 C1 Ultra-Small Surface Mount Package E2 SOT-563 Lead Free By Design/RoHS Compliant (Note 1) B C "Green" Device (Note 4) E1 Mechanical Data • • • • • • • • C2 B1 D G Case: SOT-563 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Min Max Typ A 0.15 0.30 0.25 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D M K Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram H Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 L SEE NOTE 2 Marking & Type Code Information: See Last Page Ordering Information: See Last Page Dim 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.56 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18  All Dimensions in mm C1 B2 E2 E1 B1 C2 Weight: 0.003 grams (approximate) Maximum Ratings @ TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage Characteristic VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5.0 V IC -200 mA Collector Current - Continuous Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient Operating and Storage and Temperature Range Thermal Characteristics 150 mW 833 °C/W Tj, TSTG -55 to +150 °C Symbol Value Unit Pd 150 mW RθJA 833 °C/W @ TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient Notes: Pd RθJA 1. No purposefully added lead. 2. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways). 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php DS30640 Rev. 3 - 2 1 of 4 www.diodes.com MMDT3906VC  Diodes Incorporated NEW PRODUCT Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -40  V IC = -10µA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -40  V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0  V IE = -10µA, IC = 0 ICEX  -50 nA VCE = -30V, VEB(OFF) = -3.0V IBL  -50 nA VCE = -30V, VEB(OFF) = -3.0V hFE 60 80 100 60 30   300    IC = -100µA, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -50mA, VCE = IC = -100mA, VCE = Collector-Emitter Saturation Voltage VCE(SAT)  -0.25 -0.40 V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA Base-Emitter Saturation Voltage VBE(SAT) -0.65  -0.85 -0.95 V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA Output Capacitance Cobo  4.5 pF VCB = -5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo  10 pF VEB = -0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 2.0 12 kΩ Voltage Feedback Ratio hre 0.1 10 x 10-4 Small Signal Current Gain hfe 100 400  Output Admittance hoe 3.0 60 µS Current Gain-Bandwidth Product fT 250  MHz VCE = -20V, IC = -10mA, f = 100MHz Noise Figure NF  4.0 dB VCE = -5.0V, IC = -100µA, RS = 1.0kΩ, f = 1.0kHz Delay Time td  35 ns Rise Time tr  35 ns Storage Time ts  225 ns Fall Time tf  75 ns OFF CHARACTERISTICS (Note 5) Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 5) DC Current Gain -1.0V -1.0V -1.0V -1.0V -1.0V SMALL SIGNAL CHARACTERISTICS VCE = 10V, IC = 1.0mA, f = 1.0kHz SWITCHING CHARACTERISTICS Notes: VCC = -3.0V, IC = -10mA, VBE(off) = 0.5V, IB1 = -1.0mA VCC = -3.0V, IC = -10mA, IB1 = IB2 = -1.0mA 5. Short duration test pulse used to minimize self-heating. DS30640 Rev. 3 - 2 2 of 4 www.diodes.com MMDT3906VC 100 CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) Pd, POWER DISSIPATION (mW) f = 1MHz 200 150 100 50 10 Cibo Cobo 1 0.1 0 -50 0 50 100 150 1000 10 100 10 VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE hFE, DC CURRENT GAIN 1 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage TA, AMBIENT TEMPERATURE (°C) Fig. 1, Derating Curve - Total TA = 125°C 100 TA = +25°C TA = -25°C 10 IC IB = 10 1 0.1 VCE = 1.0V 1 0.01 1 0.1 10 100 1000 1 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs Collector Current 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.0 VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE NEW PRODUCT 250 0.9 0.8 0.7 0.6 IC IB = 10 0.5 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current DS30640 Rev. 3 - 2 3 of 4 www.diodes.com MMDT3906VC NEW PRODUCT Ordering Information Notes: (Note 6) Device Packaging Shipping MMDT3906VC-7 SOT-563 3000/Tape & Reel 6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information ARK = Product Type Marking Code YM = Date Code Marking Y = Year ex: R = 2004 M = Month ex: 9 = September ARK YM Date Code Key Year 2004 2005 2006 2007 2008 2009 Code R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30640 Rev. 3 - 2 4 of 4 www.diodes.com MMDT3906VC