MMDT4126-7

MMDT4126 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: MMDT4126 Features · · · · · Epitaxial Planar Die Construction Complementary NPN Type Available (MMDT4124) Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package Also Available in Lead Free Version SOT-363 A B1 C2 E1 B C E2 B2 C1 G H Mechanical Data · · · · · · · · · K Case: SOT-363, Molded Plastic Case Material - UL Flammability Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Also Available in Lead Free Plating (Matte Tin Finish). Please see Ordering Information, Note 5, on Page 2 Terminal Connections: See Diagram Marking (See Page 2): K2B Ordering & Date Code Information: See Page 2 Weight: 0.006 grams (approx.) Maximum Ratings M J D F L Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J ¾ 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 a 0° 8° All Dimensions in mm @ TA = 25°C unless otherwise specified Symbol MMDT4126 Unit Collector-Base Voltage Characteristic VCBO -25 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -4.0 V Collector Current - Continuous (Note 1) IC -200 mA Power Dissipation (Note 1, 2) Pd 200 mW RqJA 625 K/W Tj, TSTG -55 to +150 °C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Maximum combined dissipation. DS30160 Rev. 6 - 2 1 of 3 www.diodes.com MMDT4126 ã Diodes Incorporated Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -25 ¾ V IC = -10mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -25 ¾ V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage OFF CHARACTERISTICS (Note 3) V(BR)EBO -4.0 ¾ V IE = -10mA, IC = 0 Collector Cutoff Current ICBO ¾ -50 nA VCB = -20V, IE = 0V Emitter Cutoff Current IEBO ¾ -50 nA VEB = -3.0V, IC = 0V hFE 120 60 360 ¾ ¾ IC = -2.0mA, VCE = -1.0V IC = -50mA, VCE = -1.0V Collector-Emitter Saturation Voltage VCE(SAT) ¾ -0.40 V IC = -50mA, IB = -5.0mA Base-Emitter Saturation Voltage VBE(SAT) ¾ -0.95 V IC = -50mA, IB = -5.0mA Cobo ¾ 4.5 pF VCB = -5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo ¾ 10 pF VEB = -0.5V, f = 1.0MHz, IC = 0 Small Signal Current Gain hfe 120 480 ¾ Current Gain-Bandwidth Product fT 250 ¾ MHz VCE = -1.0V, IC = -2.0mA, f = 1.0kHz VCE = -20V, IC = -10mA, f = 100MHz Noise Figure NF ¾ 4.0 dB ON CHARACTERISTICS (Note 3) DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Ordering Information VCE = -5.0V, IC = -100mA, RS = 1.0kW, f = 1.0kHz (Note 4) Device Packaging Shipping MMDT4126-7 SOT-363 3000/Tape & Reel Notes: 3. Short duration test pulse used to minimize self-heating effect. 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 5. For Lead Free version (with Lead Free terminal finish) part number, please add "-F" suffix to part number above. Example: MMDT4126-7-F. Marking Information YM K2B K2B = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September YM K2B Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30160 Rev. 6 - 2 2 of 3 www.diodes.com MMDT4126 100 f = 1MHz CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 10 Cibo 50 Cobo 1 0.1 0 0 25 50 75 100 125 150 200 175 100 10 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature 10 VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE 1000 hFE, DC CURRENT GAIN 1 TA = 125°C 100 TA = +25°C TA = -25°C 10 IC IB = 10 1 0.1 VCE = 1.0V 0.01 1 1 0.1 10 100 1 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs Collector Current 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE 1.0 0.9 0.8 0.7 0.6 IC IB = 10 0.5 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current DS30160 Rev. 6 - 2 3 of 3 www.diodes.com MMDT4126