MMST3904
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
SPICE MODEL: MMST3904
Features
·
·
·
·
Epitaxial Planar Die Construction
Complementary PNP Type Available
(MMST3906)
Ultra-Small Surface Mount Package
Also Available in Lead Free Version
SOT-323
·
·
·
·
·
Dim
Min
Max
C
A
0.25
0.40
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
E
0.30
B C
Mechanical Data
·
·
·
·
A
B
Case: SOT-323, Molded Plastic
Case Material - UL Flammability Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Also Available in Lead Free Plating (Matte Tin
Finish). Please see Ordering Information,
Note 4, on Page 2
Terminal Connections: See Diagram
Marking (See Page 2): K2N
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approx.)
E
G
H
K
M
J
D
L
C
1.20
1.40
H
1.80
2.20
J
0.0
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.18
a
0°
8°
All Dimensions in mm
B
Maximum Ratings
E
E
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
MMST3904
Unit
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current - Continuous (Note 1)
IC
200
mA
Power Dissipation (Note 1)
Pd
200
mW
RqJA
625
°C/W
Tj, TSTG
-55 to +150
°C
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Note:
0.40
G
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30082 Rev. 5 - 2
1 of 3
www.diodes.com
MMST3904
ã Diodes Incorporated
Electrical Characteristics
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
60
¾
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
¾
V
IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
5.0
¾
V
IE = 10mA, IC = 0
ICEX
¾
50
nA
VCE = 30V, VEB(OFF) = 3.0V
IBL
¾
50
nA
VCE = 30V, VEB(OFF) = 3.0V
hFE
40
70
100
60
30
¾
¾
300
¾
¾
¾
Collector-Emitter Saturation Voltage
VCE(SAT)
¾
0.25
0.30
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Base- Emitter Saturation Voltage
VBE(SAT)
0.65
¾
0.85
0.95
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Output Capacitance
Cobo
¾
4.0
pF
VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
¾
8.0
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
1.0
10
kW
Voltage Feedback Ratio
hre
0.5
8.0
x 10-4
Small Signal Current Gain
hfe
100
400
¾
Output Admittance
hoe
1.0
40
mS
Current Gain-Bandwidth Product
fT
300
¾
MHz
VCE = 20V, IC = 10mA,
f = 100MHz
Noise Figure
NF
¾
5.0
dB
VCE = 5.0V, IC = 100mA,
RS = 1.0kW, f = 1.0kHz
Delay Time
td
¾
35
ns
Rise Time
tr
¾
35
ns
OFF CHARACTERISTICS (Note 2)
Collector Cutoff Current
Base Cutoff Current
IC = 10mA, IE = 0
ON CHARACTERISTICS (Note 2)
DC Current Gain
IC = 100µA, VCE =
IC = 1.0mA, VCE =
IC = 10mA, VCE =
IC = 50mA, VCE =
IC = 100mA, VCE =
1.0V
1.0V
1.0V
1.0V
1.0V
SMALL SIGNAL CHARACTERISTICS
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
SWITCHING CHARACTERISTICS
Ordering Information
Notes:
VCC = 3.0V, IC = 10mA,
VBE(off) = - 0.5V, IB1 = 1.0mA
(Note 3)
Device
Packaging
Shipping
MMST3904-7
SOT-323
3000/Tape & Reel
2. Short duration test pulse used to minimize self-heating effect.
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
4. For Lead Free version (with Lead Free terminal finish) part number, please add "-F" suffix to part number above.
Example: MMST3904-7-F.
Marking Information
YM
K2N = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K2N
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
J
K
L
M
N
P
R
S
T
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
DS30082 Rev. 5 - 2
2 of 3
www.diodes.com
MMST3904
15
f = 1MHz
CIBO, INPUT CAPACITANCE (pF)
COBO, OUTPUT CAPACITANCE (pF)
PD, POWER DISSIPATION (mW)
350
300
250
200
150
100
10
5
Cibo
50
Cobo
0
0.1
0
0
25
50
75
100
125
150
200
175
10
100
VCB, COLLECTOR-BASE VOLTAGE (V)
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs
Ambient Temperature
1000
1
VCE(SAT), COLLECTOR-EMITTER (V)
SATURATION VOLTAGE
hFE, DC CURRENT GAIN
1
TA = 125°C
100
TA = +25°C
TA = -25°C
10
IC
IB = 10
0.1
VCE = 1.0V
0.01
1
1
0.1
10
100
1000
0.1
1
10
1000
100
IC, COLLECTOR CURRENT (mA)
Fig. 4, Typical Collector-Emitter
Saturation Voltage vs. Collector Current
IC, COLLECTOR CURRENT (mA)
Fig. 3, Typical DC Current Gain vs
Collector Current
10
VBE(SAT), BASE-EMITTER (V)
SATURATION VOLTAGE
IC
IB = 10
1
0.1
0.1
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current
DS30082 Rev. 5 - 2
3 of 3
www.diodes.com
MMST3904
