MMST5401-7-F

SPICE MODEL: MMST5401 MMST5401 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · · · · Epitaxial Planar Die Construction SOT-323 Complementary NPN Type Available (MMST5551) A Dim Min Max Ideal for Medium Power Amplification and Switching C A 0.25 0.40 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal Ultra-Small Surface Mount Package Available in Lead Free/RoHS Compliant Version (Note 2) B C B Mechanical Data E G H · · Case: SOT-323 · · · · Moisture Sensitivity: Level 1 per J-STD-020C K Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 M J D E L Terminal Connections: See Diagram C Terminals: Solderable per MIL-STD-202, Method 208 Also Available in Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Please see Ordering Information, Note 5, on Page 2 · · · E 0.30 0.40 G 1.20 1.40 H 1.80 2.20 J 0.0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.18 a 0° 8° All Dimensions in mm Marking (See Page 2): K4M B E Ordering & Date Code Information: See Page 2 Weight: 0.006 grams (approximate) Maximum Ratings @ TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage Characteristic VCBO -160 V Collector-Emitter Voltage VCEO -150 V Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous (Note 1) IC -200 mA Power Dissipation (Note 1) Pd 200 mW RqJA 625 °C/W Tj, TSTG -55 to +150 °C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS30170 Rev. 6 - 2 1 of 3 www.diodes.com MMST5401 ã Diodes Incorporated Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -160 ¾ V IC = -100mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -150 ¾ V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ¾ V IE = -10mA, IC = 0 VCB = -120V, IE = 0 VCB = -120V, IE = 0, TA = 100°C OFF CHARACTERISTICS (Note 3) Collector Cutoff Current ICBO ¾ -50 nA mA Emitter Cutoff Current IEBO ¾ -50 nA VEB = -3.0V, IC = 0 hFE 50 60 50 ¾ 240 ¾ ¾ IC = -1.0mA, VCE = -5.0V IC = -10mA, VCE = -5.0V IC = -50mA, VCE = -5.0V Collector-Emitter Saturation Voltage VCE(SAT) ¾ -0.2 -0.5 V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA Base-Emitter Saturation Voltage VBE(SAT) ¾ -1.0 V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA Cobo ¾ 6.0 pF VCB = -10V, f = 1.0MHz, IE = 0 Small Signal Current Gain hfe 40 200 ¾ Current Gain-Bandwidth Product fT 100 300 MHz VCE = -10V, IC = -1.0mA, f = 1.0kHz VCE = -10V, IC = -10mA, f = 100MHz Noise Figure NF ¾ 8.0 dB ON CHARACTERISTICS (Note 3) DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance VCE = -5.0V, IC = -200mA, RS = 10W, f = 1.0kHz Ordering Information (Note 4) Notes: Device Packaging Shipping MMST5401-7 SOT-323 3000/Tape & Reel 3. Short duration test pulse used to minimize self-heating effect. 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MMST5401-7-F. Marking Information YM K4M = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September K4M Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30170 Rev. 6 - 2 2 of 3 www.diodes.com MMST5401 10.0 IC = 10 IB VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) PD, POWER DISSIPATION (mW) 200 150 100 50 1.0 TA = 150°C 0.1 TA = -50°C TA = 25°C 0 0 25 50 75 100 125 150 175 0.01 200 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current 1.0 10,000 VBE(ON), BASE EMITTER VOLTAGE (V) VCE = 5V hFE, DC CURRENT GAIN 10 1 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature 1000 TA = 150°C 100 TA = 25°C TA = -50°C 10 0.9 VCE = 5V TA = -50°C 0.8 0.7 TA = 25°C 0.6 0.5 0.4 TA = 150°C 0.3 0.2 0.1 1 10 1 100 1000 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Base Emitter Voltage vs. Collector Current IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs. Collector Current ft, GAIN BANDWIDTH PRODUCT (MHz) 1000 VCE = 10V 100 10 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5, Gain Bandwidth Product vs Collector Current DS30170 Rev. 6 - 2 3 of 3 www.diodes.com MMST5401