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PI3PCIE3412ZHEX

PI3PCIE3412ZHEX

  • 厂商:

    BCDSEMI(美台)

  • 封装:

    VFQFN42_EP

  • 描述:

    IC2:1MUX/DEMUX42TQFN

  • 数据手册
  • 价格&库存
PI3PCIE3412ZHEX 数据手册
PART OBSOLETE - USE PI3PCIE3412A A product Line of Diodes Incorporated PI3PCIE3412 3.3V, PCI Express® 3.0 2-Lane, 2:1 Mux/DeMux Switch, with Single Enable Features Description • • • • • • • • • • • • • The PI3PCIE3412 is an 8 to 4 differential channel multiplexer/ demultiplexer switch. This solution can switch 2 full PCI Express® 3.0, lanes to one of two locations. Using a unique design technique, Diodes has been able to minimize the impedance of the switch such that the attenuation observed through the switch is minimal. The unique design technique also offers a layout targeted for PCI Express signals, which minimizes the channel to channel skew as well as channel to channel crosstalk as required by the PCI Express specification. PI3PCIE3412 can also be used for application up to 12Gbps N O FO T R RE N C EW O M D M ES EN IG D N ED S 4 Differential Channel, 2:1 Mux/DeMux PCI Express® 3.0 Performance, 8.0Gbps Bi-directional Operation Low Bit-to-Bit Skew, 10ps max Low channel-to-channel skew, 20ps max Low Crosstalk: -35dB@4 GHz High Off Isolation: -22dB@4 GHz (8.0Gbps) Low insertion loss: -1.3dB@4 GHz (8.0Gbps) Return loss: -21dB@4 GHz Support for DP1.2 - HBR2, HBR, RBR Supply Voltage 3.3V Industrial Temperature Range: -40oC to 85oC Packaging (Pb-free & Green): – 42-contact, TQFN (ZH42), 3.5 x 9mm – 40-contact, TQFN (ZL40), 3 x 6mm Application Routing of PCI Express 3.0, DP1.2, USB3.0, SAS2.0, SATA3.0, XAUI, RXAUI signals with low signal attenuation. Pin Configuration - 42- Contact TQFN GND GND VDD GND B0+ B0- VDD GND VDD GND Pin Configuration - 40- Contact TQFN A0+ A0VDD A1+ A1VDD SEL GND A2+ A2VDD GND A3+ A3- 1 2 3 4 5 6 7 8 9 10 11 12 13 14 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 GND A0+ A0GND VDD A1+ A1VDD SEL GND A2+ A2VDD GND A3+ A3GND B1+ B1C0+ C0C1+ C1VDD GND B2+ B2B3+ B3C2+ C2- 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 B0+ B0B1+ B1C0+ C0C1+ C1VDD B2+ B2B3+ B3C2+ C2C3+ C3- 18 19 20 21 VDD GND VDD GND C3C3+ GND GND VDD GND 15 16 17 18 19 20 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 All trademarks are property of their respective owners. 1 www.diodes.com 09/08/17 PART OBSOLETE - USE PI3PCIE3412A A product Line of Diodes Incorporated PI3PCIE3412 Block Diagram A0+ B0+ A0- B0- A1+ B1+ A1- B1- N O FO T R RE N C EW O M D M ES EN IG D N ED S C0+ C0- C1+ C1- A2+ B2+ A2- B2- A3+ B3+ A3- B3- C2+ C2- C3+ C3- SEL Truth Table Function SEL AN to BN L AN to CN H All trademarks are property of their respective owners. 2 www.diodes.com 09/08/17 PART OBSOLETE - USE PI3PCIE3412A A product Line of Diodes Incorporated PI3PCIE3412 Pin Description Pin # 40-TQFN Pin Name 2 1 A0+ 3 2 A0– 6 4 A1+ 5 A1– 9 A2+ 10 A2– 13 A3+ 14 A3– 36 B0+ 35 B0− 34 B1+ 33 B1− 26 B2+ 25 B2− 24 B3+ 23 B3− 32 C0+ 31 C0– 30 C1+ 29 C1– 22 C2+ 21 C2– 20 C3+ 19 C3− 7 SEL I 3, 6, 11, 17, 28, 38 V DD Pwr 3.3V ±10% Positive Supply Voltage GND Pwr Power ground 7 11 12 15 16 38 37 36 35 29 28 27 26 34 33 32 31 25 24 23 22 9 I/O Description I/O Signal I/O, Channel 0, Port A N O FO T R RE N C EW O M D M ES EN IG D N ED S 42-TQFN 5, 8, 13,18, 20, 30, 40, 42 1, 4, 10, 14, 8, 12, 15, 16, 17, 19, 21, 39, 18, 27, 37, 41, Center 39, 40 Pad All trademarks are property of their respective owners. I/O Signal I/O, Channel 1, Port A I/O Signal I/O, Channel 2, Port A I/O Signal I/O, Channel 3, Port A I/O Signal I/O, Channel 0, Port B I/O Signal I/O, Channel 1, Port B I/O Signal I/O, Channel 2, Port B I/O Signal I/O, Channel 3, Port B I/O Signal I/O, Channel 0, Port C I/O Signal I/O, Channel 1, Port C I/O Signal I/O, Channel 2, Port C I/O Signal I/O, Channel 3, Port C Operation mode Select (when SEL=0: A→B, when SEL=1: A→C 3 www.diodes.com 09/08/17 PART OBSOLETE - USE PI3PCIE3412A A product Line of Diodes Incorporated PI3PCIE3412 Maximum Ratings (Above which useful life may be impaired. For user guidelines, not tested.) Note: Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. N O FO T R RE N C EW O M D M ES EN IG D N ED S Storage Temperature .....................................................–65°C to +150°C Supply Voltage to Ground Potential ................................–0.5V to +4.6V Channel DC Input Voltage ................................................. –0.5V to 1.5V DC Output Current ....................................................................... 120mA Power Dissipation ............................................................................ 0.5W SEL DC Input Voltage ....................................................... –0.5V to 4.6V Electrical Characteristics Recommended Operating Conditions Symbol Parameter VDD 3.3V Power Supply IDD Total current from VDD 3.3V supply Conditions Min. Typ. Max. Units 3.0 3.3 3.6 V 0.15 1 mA 1.6 Vppd 0 0.8 -40 85 V oC SEL = 0V or VDD VI/O-DIF Differential Voltage (differential pins) VI/O-CM Common Mode Voltage (differiential pins) TA Operating temperature range DC Electrical Characteristics for Switching over Operating Range Parameters Description Test Conditions(1) Min. Typ.(1) Max. Units VIH - SEL Input HIGH Voltage, SEL Input 2 3.6 VIL - SEL Input LOW Voltage, SEL Input 0 0.8 VIK Clamp Diode Voltage VDD = Max., IIN = –18mA Input HIGH Current, SEL VDD = Max., VIN = VDD ±5 Input LOW Current, SEL VDD = Max., VIN = 0V ±5 IIN - SEL Input Leakage Current, SEL Input VIN = VIH - SEL Max or VIL - SEL Min –10 +10 IIH Input HIGH Current, A X, BX, CX VDD = Max., VIN = 1.5V –10 +10 Input LOW Current, A X, BX, CX VDD = Max., VIN = 0V –10 +10 IOZH HighZ HIGH Current, BX, CX VDD = Max., VIN = 1.5V –10 +10 µA IOZL HighZ LOW Current, BX, CX VDD = Max., VIN = 0V –10 +10 µA CI/O-ON ON state I/O capacitance IIH IIL IIL –0.7 RON ON state resistance VDD = 3.3V, IO = 8mA, VIN = 0.8V Note: 1. Typical values are at VDD = 3.3V, TA = 25°C ambient and maximum loading. V –1.2 µA µA µA 1.5 pF 5 Ω Switching Characteristics Parameters Description tPZH, tPZL Min. Typ. Max. Line Enable Time - SEL to AN, BN, CN 2 20 25 tPHZ , tPLZ Line Disable Time - SEL to AN, BN, CN 0.5 5 25 tb-b Bit-to-bit skew within the same differential pair 5 10 ps tch-ch Channel-to-channel skew 20 ps All trademarks are property of their respective owners. Test Conditions 4 Units ns www.diodes.com 09/08/17 PART OBSOLETE - USE PI3PCIE3412A A product Line of Diodes Incorporated PI3PCIE3412 Dynamic Electrical Characteristics Typ.(1) Max. f= 50MHz - 1.25GHz -0.8 -1 Differential Insertion Loss f=1.25GHz - 2.5GHz -1.0 -1.2 (VIN = -10dBm, DC = 0V) f=2.5GHz - 4GHz -1.3 -1.6 f=5GHz -1.8 -2.2 Parameter Description DDILOFF Differential Off Isolation DDRL Differential Return Loss DDNEXT VI F BW Min. N O FO T R RE N C EW O M D M ES EN IG D N ED S DDIL Test Conditions Near End Crosstalk Max Signal Frequency Range f= 50MHz - 1.25GHz -26.3 -32.9 f=1.25GHz - 2.5GHz -21.4 -26.7 f=2.5GHz - 4GHz -17.6 -22 f=5GHz -16 -20 f= 50MHz - 1.25GHz -20 -25 f=1.25GHz - 2.5GHz -18.4 -23 f=2.5GHz - 4GHz -16.8 -21 f=5GHz -9.6 -12 f= 50MHz - 1.25GHz -34.1 -42.6 f=1.25GHz - 2.5GHz -30.5 -38.1 f=2.5GHz - 4GHz -28.1 -35.1 f=5GHz -27.2 -34 Insertion loss 1.5dB, VIN=0.623Vpp, DC=0V 4.0 Insertion loss 1.5dB, VIN=0.623Vpp, DC=0.9V 4.0 Insertion loss 3dB, VIN=0.623Vpp, DC=0V 8.0 Insertion loss 3dB, VIN=0.623Vpp, DC=0.9V 8.0 -3dB Bandwidth 8.2 Units dB dB dB dB GHz GHz Notes: 1. Guaranteed by design. Typical values are at VDD = 3.3V , Ta = 25°C ambient and maximum loading. + + BALANCED PORT1 – BALANCED PORT1 + + 50 – – 50 BALANCED – PORT2 + – DUT BALANCED PORT2 DUT Diff. Insertion Loss and Return Test Circuit All trademarks are property of their respective owners. Diff. Off Isolation Test Circuit 5 BALANCED PORT1 BALANCED PORT2 + + 50 – – 50 + + 50 – – 50 DUT Diff. Near End Xtalk Test Circuit www.diodes.com 09/08/17 PART OBSOLETE - USE PI3PCIE3412A A product Line of Diodes Incorporated N O FO T R RE N C EW O M D M ES EN IG D N ED S PI3PCIE3412 Differential Insertion Loss Differential Return Loss All trademarks are property of their respective owners. 6 www.diodes.com 09/08/17 PART OBSOLETE - USE PI3PCIE3412A A product Line of Diodes Incorporated N O FO T R RE N C EW O M D M ES EN IG D N ED S PI3PCIE3412 Differential Off Isolation Differential Crosstalk All trademarks are property of their respective owners. 7 www.diodes.com 09/08/17 PART OBSOLETE - USE PI3PCIE3412A A product Line of Diodes Incorporated N O FO T R RE N C EW O M D M ES EN IG D N ED S PI3PCIE3412 5.0 Gbps RX signal eye without PI3PCIE3412 5.0 Gbps RX signal eye with PI3PCIE3412 8.0 Gbps RX signal eye without PI3PCIE3412 8.0 Gbps RX signal eye with PI3PCIE3412 All trademarks are property of their respective owners. 8 www.diodes.com 09/08/17 PART OBSOLETE - USE PI3PCIE3412A A product Line of Diodes Incorporated PI3PCIE3412 Test Circuit for Electrical Characteristics(1-5) Switch Positions VDD Port1 COM Port Switch tPLZ , tPZL 3.0V tPHZ , tPZH GND Prop Delay Open N O FO T R RE N C EW O M D M ES EN IG D N ED S Port2 D.U.T Test 4pF CL xEN 200-ohm Pulse Notes: Generator 1. CL = Load capacitance: includes jig and probe capacitance. 2. RT = Termination resistance: should be equal to ZOUT of the Pulse Generator 3. Output 1 is for an output with internal conditions such that the output is low except when disabled by the output control. Output 2 is for an output with internal conditions such that the output is high except when disabled by the output control. 4. All input impulses are supplied by generators having the following characteristics: PRR ≤ MHz, ZO = 50Ω, tR ≤ 2.5ns, tF ≤ 2.5ns. 5. The outputs are measured one at a time with one transition per measurement. Switching Waveforms xEN VDD 50% 50% 0V Output 1 Tsw Tsw VOH 50% VOL Tsw Tsw VOH 50% VOL Output 2 Voltage Waveforms Enable and Disable Times All trademarks are property of their respective owners. 9 www.diodes.com 09/08/17 PART OBSOLETE - USE PI3PCIE3412A A product Line of Diodes Incorporated PI3PCIE3412 DP1.2 Application C101 C102 C103 C104 C105 C106 1u_0805 0.1u_0402 0.1u_0402 0.1u_0402 0.1u_0402 3V3_1 DP Source 1 4.7u_0805 3V3_1 At least 1pc 4.7uF and 4pc 0.1uF decoupling capacitors are recommended. Each decoupling capacitor should be connected to PCB power plane via shortest path. 3V3_1 C107 DP_LANEx AUX_N1 AUX_P1 C108 1u_0805 C109 C110 0.1u_0402 0.1u_0402 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 50 DP_LANEx# Same goes for other 3 lanes 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 GND A0+ A0GND VDD A1+ A1VDD SEL GND A2+ A2VDD GND A3+ A3GND HEATGND VDD GND VDD GND (0 - 1.2V) VDD GND VDD GND 50 DP TX 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 B0+ B0B1+ B1C0+ C0C1+ C1VDD B2+ B2B3+ B3C2+ C2C3+ C3- C111 0.1u_0402 C112 0.1u_0402 C113 0.1u_0402 C114 0.1u_0402 C115 0.1u_0402 C116 0.1u_0402 C117 0.1u_0402 C118 0.1u_0402 18 19 20 21 3V3_1 C119 DP_AUX 50 AUX TX AUX_N2 AUX_P2 VDD and GND pins should be shorted to PCB power planes via shortest paths. (0 - 1.2V) 50 DP_AUX# 0.1u_0402 0.1u_0402 C125 0.1u_0402 C126 0.1u_0402 C127 5V_1 and 3V3_1 should be employed at the same time. AUX RX 5V_1 U102 DP_HPD C123 C124 AUX_P1 AUX_P2 DP_AUX AUX_N1 AUX_N2 DP_AUX# 1 2 3 4 5 6 7 8 IN VDD S1A #EN S2A S1D DA S2D S1B DD S2B S1C DB S2C GND DC 16 15 14 13 12 11 10 9 0.1u_0402 C128 0.1u_0402 C129 0.1u_0402 C130 0.1u_0402 LCD_VCC LCD_VCC LCD_VCC LCD_Self_Test LCD_VCC LCD_GND H_GND LCD_GND AUX_CH_N LCD_GND LCD_GND AUX_CH_P H_GND HPD Lane0_P BL_GND Lane0_N BL_GND H_GND BL_GND Lane1_P BL_GND Lane1_N BL_ENABLE BL_PWM_DIM H_GND Lane2_P NC Lane2_N NC H_GND BL_PWR Lane3_P BL_PWR Lane3_N BL_PWR H_GND BL_PWR NC NC 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 HPD1 4Lane eDP Source Receptacle PI3PCIE3412 Vbias_TX 3V3_1 J101 N O FO T R RE N C EW O M D M ES EN IG D N ED S U101 43 42 41 40 39 Vbias_TX 0.1u_0402 0.1u_0402 C120 1u_0805 C121 C122 0.1u_0402 0.1u_0402 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 3V3_1 J102 LCD_VCC LCD_VCC LCD_VCC LCD_Self_Test LCD_VCC LCD_GND H_GND LCD_GND AUX_CH_N LCD_GND AUX_CH_P LCD_GND H_GND HPD Lane0_P BL_GND Lane0_N BL_GND H_GND BL_GND Lane1_P BL_GND Lane1_N BL_ENABLE H_GND BL_PWM_DIM Lane2_P NC Lane2_N NC H_GND BL_PWR Lane3_P BL_PWR Lane3_N BL_PWR H_GND BL_PWR NC NC 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 HPD2 4Lane eDP Source Receptacle HPD1 HPD2 DP_HPD PI5V330 C131 0.1u_0402 SEL_GPIO1 All trademarks are property of their respective owners. 10 www.diodes.com 09/08/17 PART OBSOLETE - USE PI3PCIE3412A A product Line of Diodes Incorporated PI3PCIE3412 N O FO T R RE N C EW O M D M ES EN IG D N ED S Packaging Information Notes: 1. All dimensions are in mm. Angles in degrees. 2. Coplanarity applies to the exposed pad as well as the terminals. 3. Refer JEDEC MO-220 All trademarks are property of their respective owners. DATE: 07/11/13 DESCRIPTION: 40-contact, Thin Fine Pitch Quad Flat No-Lead, TQFN PACKAGE CODE: ZL (ZL40) DOCUMENT CONTROL #: PD-2165 11 REVISION: -- www.diodes.com 09/08/17 PART OBSOLETE - USE PI3PCIE3412A A product Line of Diodes Incorporated PI3PCIE3412 N O FO T R RE N C EW O M D M ES EN IG D N ED S Packaging Information Note: For latest package info, please check: http://www.pericom.com/support/packaging/packaging-mechanicals-and-thermal-characteristics/ Ordering Information Ordering Code Package Code Package Description PI3PCIE3412ZLE ZL 40-contact, Thin Fine Pitch Quad Flat No-Lead (TQFN) PI3PCIE3412ZLEX ZL 40-contact, Thin Fine Pitch Quad Flat No-Lead (TQFN), Tape & Reel PI3PCIE3412ZHE ZH 42-contact, Very Thin Quad Flat No-Lead (TQFN) PI3PCIE3412ZHEX ZH 42-contact, Very Thin Quad Flat No-Lead (TQFN), Tape & Reel Notes: • Thermal characteristics can be found on the company web site at www.pericom.com/packaging/ • "E" denotes Pb-free and Green • Adding an "X" at the end of the ordering code denotes tape and reel packaging All trademarks are property of their respective owners. 12 www.diodes.com 09/08/17 PART OBSOLETE - USE PI3PCIE3412A A product Line of Diodes Incorporated PI3PCIE3412 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). N O FO T R RE N C EW O M D M ES EN IG D N ED S Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2016, Diodes Incorporated www.diodes.com All trademarks are property of their respective owners. 13 www.diodes.com 09/08/17
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