PART OBSOLETE - USE PI3PCIE3413A
A product Line of
Diodes Incorporated
PI3PCIE3413
3.3V, PCI Express® 3.0 2-Lane, 3:1 Mux/DeMux Switch, with Power Down Feature
Features
Description
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Pericom Semiconductor’s PI3PCIE3413 is an 12 to 4 differential
channel multiplexer/demultiplexer switch. This solution can
switch 2 full PCI Express® 3.0, lanes to one of three locations.
Using a unique design technique, Pericom has been able to
minimize the impedance of the switch such that the attenuation
observed through the switch is mininal. The unique design
technique also offers a layout targeted for PCI Express signals,
which minimizes the channel to channel skew as well as channel
to channel crosstalk as required by the PCI Express specification.
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4 Differential Channel, 3:1 Mux/DeMux
PCI Express® 3.0 Performance, 8.0Gbps
Bi-directional operation
-3dB Bandwidth: 8GHz
Low Bit-to-Bit Skew, 10ps max
Low Crosstalk: -40dB@4 GHz
Low Insertion Loss: -2.1dB@4 GHz (8.0Gbps)
Low Return Loss:-10dB@4GHz (8.0Gbps)
Low Off Isolation:-19dB @4GHz (8Gbps)
Power Down option
Supply Voltage 3.3V
Packaging (Pb-free & Green):
– 42-contact, TQFN (ZH42)
Application
Routing of PCI Express 3.0, signals with low signal attenuation.
B0+
A0-
B0-
A1+
B1+
A1-
B1-
GND
A0+
C0+
SEL1
SEL2
GND
Pin Description (Top-side view)
Block Diagram
C0-
VDD
A0+
A0D0+
D0A1+
A1D1+
D1A2+
A2D2+
D2A3+
A3D3+
D3-
D0-
D1+
D1-
A2+
B2+
A2-
B2-
A3+
B3+
A3-
B3-
C2+
C2-
C3+
C3-
D2+
D2-
D3+
D3-
SEL1
SEL2
Select Decode
SEL1
SEL2
Function
0
0
Power down
all switch hi-z
0
1
A→B
1
0
A→C
1
1
A→D
42 41 40 39
1
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
VDD
B0+
B0C0+
C0B1+
B1C1+
C1B2+
B2C2+
C2B3+
B3C3+
C3-
18 19 20 21
GND
VDD
Truth Table
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
GND
C1-
D0+
VDD
C1+
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PART OBSOLETE - USE PI3PCIE3413A
A product Line of
Diodes Incorporated
PI3PCIE3413
Pin Description
Pin Name
2
A0+
3
A0–
6
A1+
I/O
Description
I/O
Signal I/O, Channel 0, Port A
I/O
Signal I/O, Channel 1, Port A
I/O
Signal I/O, Channel 2, Port A
I/O
Signal I/O, Channel 3, Port A
I/O
Signal I/O, Channel 0, Port B
I/O
Signal I/O, Channel 1, Port B
I/O
Signal I/O, Channel 2, Port B
I/O
Signal I/O, Channel 3, Port B
I/O
Signal I/O, Channel 0, Port C
I/O
Signal I/O, Channel 1, Port C
I/O
Signal I/O, Channel 2, Port C
I/O
Signal I/O, Channel 3, Port C
I/O
Signal I/O, Channel 0, Port D
I/O
Signal I/O, Channel 1, Port D
I/O
Signal I/O, Channel 2, Port D
I/O
Signal I/O, Channel 3, Port D
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Pin #
7
A1–
10
A2+
11
A2–
14
A3+
15
A3–
37
B0+
36
B0−
33
B1+
32
B1−
29
B2+
28
B2−
25
B3+
24
B3−
35
C0+
34
C0–
31
C1+
30
C1–
27
C2+
26
C2–
23
C3+
22
C3−
4
D0+
5
D0−
8
D1+
9
D1−
12
D2+
13
D2−
16
D3+
17
D3−
40, 41
SEL2, SEL1
I
Operation mode Select. Please see Truth Table on Page 1
1, 19, 20, 38
VDD
Pwr
3.3V ±10% Positive Supply Voltage
18,21, 39, 42 Center
Pad
GND
Pwr
Power ground
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PART OBSOLETE - USE PI3PCIE3413A
A product Line of
Diodes Incorporated
PI3PCIE3413
Maximum Ratings
(Above which useful life may be impaired. For user guidelines, not tested.)
Note: Stresses greater than those listed under MAXIMUM
RATINGS may cause permanent damage to the device. This
is a stress rating only and functional operation of the device
at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
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Storage Temperature .....................................................–65°C to +150°C
Supply Voltage to Ground Potential ................................–0.5V to +4.6V
Channel DC Input Voltage ................................................. –0.5V to 1.5V
DC Output Current ....................................................................... 120mA
Power Dissipation ............................................................................ 0.5W
SEL DC Input Voltage ....................................................... –0.5V to 4.6V
Electrical Characteristics
Recommended Operating Conditions
Symbol
Parameter
Conditions
Min
Typ
Max
Units
3.0
3.3
3.6
V
1
mA
85
Celsius
Max
Units
VDD
3.3V Power Supply
IDD
Total current from VDD
3.3V supply
SEL1,2 = 01, 10 or 11
0.15
IDDQ
Standby IDD
SEL1,2 = 00
0.1
TCASE
Case temperature range
for operation within spec.
-40
DC Electrical Characteristics for Switching over Operating Range
Test Conditions1
Typ(1)
Parameters
Description
Min
VIH - SEL
Input HIGH Voltage, SEL Input
2
3.6
VIL - SEL
Input LOW Voltage, SEL Input
0
0.8
VIK
Clamp Diode Voltage
VDD = Max., IIN = –18mA
IIH
Input HIGH Current, SEL
VDD = Max., VIN = VDD
±5
IIL
Input LOW Current, SEL
VDD = Max., VIN = 0V
±5
IIH
Input HIGH Current, A X, BX, CX, Dx
VDD = Max., VIN = 1.5V
–10
+10
IIL
Input LOW Current, A X, BX, CX, Dx
VDD = Max., VIN = 0V
–10
+10
IOZH
HighZ HIGH Current, BX, CX, Dx
VDD = Max., VIN = 1.5V
–10
+10
µA
–10
+10
µA
Units
–0.7
HighZ LOW Current, BX, CX, Dx
VDD = Max., VIN = 0V
IOZL
Note:
1. Typical values are at VDD = 3.3V, TA = 25°C ambient and maximum loading.
V
–1.2
µA
µA
Switching Characteristics
Parameters
Description
tPZH, tPZL
Min.
Typ.
Max.
Line Enable Time - SEL to AN, BN, CN, DN
0.5
41
55
tPHZ , tPLZ
Line Disable Time - SEL to AN, BN, CN, DN
0.5
5
25
tb-b
Bit-to-bit skew within the same differential pair
5
10
Notes:
1.
Test Conditions
ns
ps
Guaranteed by design. Typical values are at VDD = 3.3V , TA = 25°C ambient and maximum loading.
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PART OBSOLETE - USE PI3PCIE3413A
A product Line of
Diodes Incorporated
PI3PCIE3413
Dynamic Electrical Characteristics
Parameter
Test Conditions
Min.
Typ.(1)
f= 50MHz - 1.25GHz
-0.84
-0.7
Differential Insertion Loss
f= 1.25GHz - 2.5GHz
-1.44
-1.2
(VIN = -10dBm, DC = 0V)
f= 2.5GHz - 4.0GHz
-2.76
-2.3
f= 5.0GHz
-3.24
-2.7
Description
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DDIL
Max.
Differential Return Loss
DDILRL
Differential Off Isolation
DDILOFF
DDNEXT
Near End Crosstalk
BW
f= 50MHz - 1.25GHz
-22.8
-18.2
f= 1.25GHz - 2.5GHz
-35
-28
f= 2.5GHz - 4.0GHz
-9.4
-7.52
f= 5.0GHz
-7
-5.6
f= 50MHz - 1.25GHz
-34.8
-27.8
f= 1.25GHz - 2.5GHz
-25.2
-20.2
f= 2.5GHz - 4.0GHz
-19.5
-15.6
f= 5.0GHz
-18.5
-14.8
f= 50MHz - 1.25GHz
-48.5
-38.8
f= 1.25GHz - 2.5GHz
-43.4
-34.7
f= 2.5GHz - 4.0GHz
-42.7
-34.2
f= 5.0GHz
-42.7
-34.2
-3dB Bandwidth
8.3
Units
dB
dB
dB
dB
GHz
Notes:
1. Guaranteed by design. Typical values are at VDD = 3.3V , Ta = 25°C ambient and maximum loading.
+
+
BALANCED
PORT1
–
BALANCED
PORT1
+
+
50
–
–
50
BALANCED
– PORT2
+
–
DUT
Diff. Insertion Loss and Return Test
Circuit
BALANCED
PORT2
BALANCED
PORT1
BALANCED
PORT2
+
+ 50
–
– 50
+
+ 50
–
– 50
DUT
DUT
Diff. Off Isolation Test Circuit
Diff. Near End Xtalk Test Circuit
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PART OBSOLETE - USE PI3PCIE3413A
A product Line of
Diodes Incorporated
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PI3PCIE3413
Differential Insertion Loss
Differential Return Loss
5
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PART OBSOLETE - USE PI3PCIE3413A
A product Line of
Diodes Incorporated
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PI3PCIE3413
Differential Off Isolation
Differential Crosstalk
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PART OBSOLETE - USE PI3PCIE3413A
A product Line of
Diodes Incorporated
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PI3PCIE3413
5.0 Gbps RX signal eye with PI3PCIE3413
5.0 Gbps RX signal eye without PI3PCIE3413
8.0 Gbps RX signal eye without PI3PCIE3413
8.0 Gbps RX signal eye with PI3PCIE3413
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PART OBSOLETE - USE PI3PCIE3413A
A product Line of
Diodes Incorporated
PI3PCIE3413
Test Circuit for Electrical Characteristics(1-5)
Switch Positions
VDD
Port1
D.U.T
COM Port
4pF
CL
200-ohm
Switch
tPLZ , tPZL
3.0V
tPHZ , tPZH
GND
Prop Delay
Open
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Port2
Test
xEN
Pulse
Generator
Notes:
1. CL = Load capacitance: includes jig and probe capacitance.
2. RT = Termination resistance: should be equal to ZOUT of the Pulse Generator
3. Output 1 is for an output with internal conditions such that the output is low except when disabled by the output control.
output 2 is for an output with internal conditions such that the output is high except when disabled by the output control.
4. All input impulses are supplied by generators having the following characteristics: PRR ≤ MHz, ZO = 50Ω, tR ≤ 2.5ns, tF ≤ 2.5ns.
5. The outputs are measured one at a time with one transition per measurement.
Switching Waveforms
SEL
VDD/2
VDD/2
VDD
0V
Output 1
tPZL
tPLZ
Vp/2
VOH
VOL + 0.15V
tPHZ
tPZH
VOH - 0.15V
Vp/2
VOL
VOH
VOL
Output 2
Voltage Waveforms Enable and Disable Times
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www.pericom.com 09/08/17
PART OBSOLETE - USE PI3PCIE3413A
A product Line of
Diodes Incorporated
PI3PCIE3413
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Packaging Information: 42-contact (TQFN)
17-0266
For latest package info.
please check: http://www.diodes.com/design/support/packaging/pericom-packaging/packaging-mechanicals-and-thermal-characteristics/
Ordering Information
Ordering Code
Package Code
Package Description
PI3PCIE3413ZHE
ZH
42-contact, Thin Fine Pitch Quad Flat No-Lead (TQFN)
Notes:
• Thermal characteristics can be found on the company web site at www.diodes.com/design/support/packaging/
• E = Pb-free and Green
• X suffix = Tape/Reel
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PART OBSOLETE - USE PI3PCIE3413A
A product Line of
Diodes Incorporated
PI3PCIE3413
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT
LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER
THE LAWS OF ANY JURISDICTION).
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Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or
any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer
or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all
the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
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Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal
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Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval
of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably
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failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge
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