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SBL3060CT

SBL3060CT

  • 厂商:

    BCDSEMI(美台)

  • 封装:

    TO220

  • 描述:

    DIODE ARRAY SCHOTTKY TO220

  • 数据手册
  • 价格&库存
SBL3060CT 数据手册
SBL3030CT - SBL3060CT 30A SCHOTTKY BARRIER RECTIFIER SPICE MODELS: SBL3030CT SBL3035CT SBL3040CT SBL3045CT SBL3050CT SBL3060CT Features · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications Plastic Material: UL Flammability Classification Rating 94V-0 TO-220AB L B · · · · Min Max A 14.22 15.88 B 9.65 10.67 C 2.54 3.43 D 5.84 6.86 E ¾ 6.35 G 12.70 14.73 H 2.29 2.79 C D K A 1 2 3 E G Mechanical Data · · Dim M J N Case: Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: As Marked on Body Weight: 2.24 grams (approx.) Mounting Position: Any Marking: Type Number H H P Pin 1 + Pin 2 Pin 3 + + Case J 0.51 1.14 K 3.53Æ 4.09Æ L 3.56 4.83 M 1.14 1.40 N 0.30 0.64 P 2.03 2.92 All Dimensions in mm Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @ TC = 100°C Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Drop @ IF = 15A, TC = 25°C Peak Reverse Current at Rated DC Blocking Voltage @TC = 25°C @ TC = 100°C Typical Junction Capacitance (Note 2) Typical Thermal Resistance Junction to Case (Note 1) Operating and Storage Temperature Range Notes: Symbol SBL 3030CT SBL 3040CT SBL 3045CT SBL 3050CT SBL 3060CT Unit VRRM VRWM VR 30 40 45 50 60 V VR(RMS) 21 28 32 35 42 V IO 30 A IFSM 250 A VFM 0.55 0.70 IRM 1.0 75 V mA Cj 420 pF RqJC 2.5 °C/W Tj, TSTG -65 to +150 °C 1. Thermal resistance junction to case mounted on heatsink. 2. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC. DS30022 Rev. B-2 1 of 2 www.diodes.com SBL3030CT-SBL3060CT ã Diodes Incorporated IF, INSTANTANEOUS FORWARD CURRENT (A) I(AV), AVERAGE RECTIFIED CURRENT (A) 30 24 18 12 6 0 0 50 100 100 10 1.0 0.1 0.2 150 0.4 0.6 0.8 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics TC, CASE TEMPERATURE (°C) Fig. 1 Forward Derating Curve 300 1000 250 Cj, JUNCTION CAPACITANCE (pF) IFSM, PEAK FORWARD CURRENT (A) 8.3 ms single half-sine-wave JEDEC method 200 150 100 50 100 Tj = 25°C f = 1.0MHz 10 0 1 10 100 NUMBER OF CYCLES AT 60Hz Fig. 3 Maximum Non-Repetitive Surge Current DS30022 Rev. B-2 2 of 2 www.diodes.com 0.1 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance SBL3030CT-SBL3060CT
SBL3060CT 价格&库存

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