TB2300L-13

TB0640L - TB3500L 30A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE UNDER DEVELOPMENT · · · · · · 30A Peak Pulse Current @ 10/1000ms 150A Peak Pulse Current @ 8/20ms 58 - 320V Stand-Off Voltages Oxide-Glass Passivated Junction Bi-Directional Protection In a Single Device High Off-State impedance and Low On-State Voltage A Mechanical Data · · · · · · · · SMB B Case: SMB, Molded Plastic Plastic Material: UL Flammability Classification Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solder Plated Terminal Solderable per MIL-STD-202, Method 208 Polarity: None; Bi-Directional Devices Have No Polarity Indicator Weight: 0.093 grams (approx.) Marking: Date Code and Marking Code (See Page 4) Ordering Information: See Page 4 Maximum Ratings Dim Min Max A 4.06 4.57 B 3.30 3.94 C 1.96 2.21 D 0.15 0.31 E 5.21 5.59 C D G F E H F 0.05 0.20 G 2.01 2.62 H 0.76 1.52 All Dimensions in mm @ TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Value Unit Ipp 30 A ITSM 15 A Junction Temperature Range Tj -40 to +150 °C Storage Temperature Range TSTG -55 to +150 °C Thermal Resistance, Junction to Lead RqJL 30 °C/W Thermal Resistance, Junction to Ambient RqJA 120 °C/W DVBR/DTj 0.1 %/°C Non-Repetitive Peak Impulse Current @10/1000us Non-Repetitive Peak On-State Current @8.3ms (one-half cycle) Typical Positive Temperature Coefficient for Breakdown Voltage Maximum Rated Surge Waveform Waveform Standard Ipp (A) 2/10 us GR-1089-CORE 200 8/20 us IEC 61000-4-5 150 10/160 us FCC Part 68 100 10/700 us ITU-T, K20/K21 60 10/560 us FCC Part 68 50 10/1000 us GR-1089-CORE 30 IPP, PEAK PULSE CURRENT (%) NEW PRODUCT Features 100 Peak Value (Ipp) tr = rise time to peak value tp = decay time to half value Half Value 50 0 0 DS30359 Rev. 2 - 1 1 of 4 tr tp TIME TB0640L - TB3500L NEW PRODUCT Electrical Characteristics @ TA = 25°C unless otherwise specified Rated Repetitive Off-State Voltage Off-State Leakage Current @ VDRM Breakover Voltage On-State Voltage @ IT = 1A VDRM (V) IDRM (uA) VBO (V) VT (V) Min (mA) Max (mA) Min (mA) Max (mA) CO (pF) TB0640L 58 5 77 3.5 50 800 150 800 100 T064L TB0720L 65 5 88 3.5 50 800 150 800 100 T072L TB0900L 75 5 98 3.5 50 800 150 800 100 T090L TB1100L 90 5 130 3.5 50 800 150 800 60 T110L TB1300L 120 5 160 3.5 50 800 150 800 60 T130L TB1500L 140 5 180 3.5 50 800 150 800 60 T150L TB1800L 160 5 220 3.5 50 800 150 800 60 T180L TB2300L 190 5 265 3.5 50 800 150 800 40 T230L TB2600L 220 5 300 3.5 50 800 150 800 40 T260L TB3100L 275 5 350 3.5 50 800 150 800 40 T310L TB3500L 320 5 400 3.5 50 800 150 800 40 T350L Part Number Breakover Current IBO Holding Current IH Symbol Notes: Off-State Capacitance Marking Code Parameter VDRM Stand-off Voltage IDRM Leakage current at stand-off voltage VBR Breakdown voltage IBR Breakdown current VBO Breakover voltage IBO Breakover current IH Holding current VT On state voltage IPP Peak pulse current CO Off-state capacitance NOTE: 1 NOTE: 2 1. IH > (VL/RL) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge recovery time does not exceed 30ms. 2. Off-state capacitance measured at f = 1.0MHz, 1.0VRMS signal, VR = 2VDC bias. I IPP IBO IH IBR IDRM VBR VT VDRM V VBO UNDER DEVELOPMENT DS30359 Rev. 2 - 1 2 of 4 TB0640L - TB3500L 1.2 NORMALIZED BREAKDOWN VOLTAGE NEW PRODUCT 100 10 1 0.1 VDRM = 50V 0.01 1.15 VBR= (TJ) VBR = (TJ = 25°C) 1.1 1.05 1 0.95 0.9 -50 0.001 -25 0 25 50 75 100 125 150 50 25 75 100 125 150 175 100 VBO= (TJ) IT, ON-STATE CURRENT (A) NORMALIZED BREAKDOWN VOLTAGE 1.1 VBO = (TJ = 25°C) 1.05 1 10 Tj = 25°C 1 -50 -25 0 25 50 75 100 125 150 175 T , JUNCTION TEMPERATURE (ºC) J Fig. 3 Relative Variation of Breakover Voltage vs. Junction Temperature 1 2 3 4 5 6 7 9 8 VT, ON-STATE VOLTAGE (V) Fig. 4 On-State Current vs. On-State Voltage 1 NORMALIZED CAPACITANCE 2 NORMALIZED HOLDING CURRENT 0 TJ, JUNCTION TEMPERATURE (°C) Fig. 2 Relative Variation of Breakdown Voltage vs. Junction Temperature TJ, JUNCTION TEMPERATURE (°C) Fig. 1 Off-State Current vs. Junction Temperature 0.95 -25 1.5 1 0.5 Tj = 25°C f = 1 Mhz VRMS = 1V CO= (VR) CO = (VR = 1V) IH = (TJ) IH = (TJ = 25°C) 0.1 0 -50 -25 0 25 50 75 100 10 1 125 100 VR, REVERSE VOLTAGE (V) Fig. 6 Relative Variation of Junction Capacitance vs. Reverse Voltage Bias TJ, JUNCTION TEMPERATURE (°C) Fig. 5 Relative Variation of Holding Current vs. Junction Temperature UNDER DEVELOPMENT DS30359 Rev. 2 - 1 3 of 4 TB0640L - TB3500L NEW PRODUCT Ordering Information Notes: (Note 3) Device Packaging Shipping TB0640L-13 TB0720L-13 TB0900L-13 TB1100L-13 TB1300L-13 TB1500L-13 TB1800L-13 TB2300L-13 TB2600L-13 TB3100L-13 TB3500L-13 SMB 3000/Tape & Reel 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information XXXXX = Product Type Marking Code YWW = Date Code Marking Y = Year ex: 2 = 2002 WW = Week YWW XXXXX Date Code Key Year 2002 2003 2004 Code 2 3 4 UNDER DEVELOPMENT DS30359 Rev. 2 - 1 4 of 4 TB0640L - TB3500L