TB2300M-13

TB0640M - TB3500M 50A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE · · · · · · · · 50A Peak Pulse Current @ 10/1000ms 250A Peak Pulse Current @ 8/20ms 58 - 320V Stand-Off Voltages Oxide-Glass Passivated Junction Bi-Directional Protection In a Single Device High Off-State impedance and Low On-State Voltage Helps Equipment Meet GR-1089-CORE, IEC 61000-4-5, FCC Part 68, ITU-T K.20/K.21, and UL497B UL Listed Under Recognized Component Index, File Number 156346 A · · · · · · Dim Min Max A 4.06 4.57 B 3.30 3.94 C 1.96 2.21 D 0.15 0.31 E 5.21 5.59 C D Mechanical Data · · SMB B G Case: SMB, Molded Plastic Plastic Material: UL Flammability Classification Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solder Plated Terminal Solderable per MIL-STD-202, Method 208 Polarity: None; Bi-Directional Devices Have No Polarity Indicator Weight: 0.093 grams (approx.) Marking: Date Code and Marking Code (See Page 4) Ordering Information: See Page 4 Maximum Ratings F E H F 0.05 0.20 G 2.01 2.50 H 0.76 1.52 All Dimensions in mm @ TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Non-Repetitive Peak Impulse Current Symbol Value Unit Ipp 50 A @10/1000us ITSM 30 A Junction Temperature Range Tj -40 to +150 °C Storage Temperature Range TSTG -55 to +150 °C Thermal Resistance, Junction to Lead RqJL 20 °C/W Thermal Resistance, Junction to Ambient RqJA 100 °C/W DVBR/DTj 0.1 %/°C Non-Repetitive Peak On-State Current @8.3ms (one-half cycle) Typical Positive Temperature Coefficient for Breakdown Voltage Maximum Rated Surge Waveform Waveform Standard Ipp (A) 2/10 us GR-1089-CORE 300 8/20 us IEC 61000-4-5 250 10/160 us FCC Part 68 150 10/700 us ITU-T, K.20/K.21 100 10/560 us FCC Part 68 75 10/1000 us GR-1089-CORE 50 IPP, PEAK PULSE CURRENT (%) NEW PRODUCT Features 100 Peak Value (Ipp) tr = rise time to peak value tp = decay time to half value Half Value 50 0 0 DS30361 Rev. 4 - 2 1 of 4 www.diodes.com tr tp TIME TB0640M - TB3500M NEW PRODUCT Electrical Characteristics @ TA = 25°C unless otherwise specified Rated Repetitive Off-State Voltage Off-State Leakage Current @ VDRM Breakover Voltage On-State Voltage @ IT = 1A VDRM (V) IDRM (uA) VBO (V) VT (V) Min (mA) Max (mA) Min (mA) Max (mA) CO (pF) TB0640M 58 5 77 3.5 50 800 150 800 140 T064M TB0720M 65 5 88 3.5 50 800 150 800 140 T072M TB0900M 75 5 98 3.5 50 800 150 800 140 T090M TB1100M 90 5 130 3.5 50 800 150 800 90 T110M TB1300M 120 5 160 3.5 50 800 150 800 90 T130M TB1500M 140 5 180 3.5 50 800 150 800 90 T150M TB1800M 160 5 220 3.5 50 800 150 800 90 T180M TB2300M 190 5 265 3.5 50 800 150 800 60 T230M TB2600M 220 5 300 3.5 50 800 150 800 60 T260M TB3100M 275 5 350 3.5 50 800 150 800 60 T310M TB3500M 320 5 400 3.5 50 800 150 800 60 T350M Part Number Breakover Current IBO Holding Current IH Symbol Notes: Off-State Capacitance Marking Code Parameter VDRM Stand-off Voltage IDRM Leakage current at stand-off voltage VBR Breakdown voltage IBR Breakdown current VBO Breakover voltage IBO Breakover current IH Holding current VT On state voltage IPP Peak pulse current CO Off-state capacitance NOTE: 1 NOTE: 2 1. IH > (VL/RL) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge recovery time does not exceed 30ms. 2. Off-state capacitance measured at f = 1.0MHz, 1.0VRMS signal, VR = 2VDC bias. I IPP IBO IH IBR IDRM VBR VT VDRM DS30361 Rev. 4 - 2 2 of 4 www.diodes.com V VBO TB0640M - TB3500M 1.2 NORMALIZED BREAKDOWN VOLTAGE I(DRM), OFF-STATE CURRENT (uA) 10 1 0.1 VDRM = 50V 0.01 1.15 VBR= (TJ) VBR = (TJ = 25°C) 1.1 1.05 1 0.95 0.9 0.001 -25 0 25 50 75 100 125 -50 150 0 25 50 75 100 125 150 175 100 VBO= (TJ) IT, ON-STATE CURRENT (A) NORMALIZED BREAKDOWN VOLTAGE 1.1 VBO = (TJ = 25°C) 1.05 1 0.95 -25 TJ, JUNCTION TEMPERATURE (°C) Fig. 2 Relative Variation of Breakdown Voltage vs. Junction Temperature TJ, JUNCTION TEMPERATURE (°C) Fig. 1 Off-State Current vs. Junction Temperature -50 -25 25 0 50 75 10 100 125 150 175 Tj = 25°C 1 1 TJ, JUNCTION TEMPERATURE (ºC) Fig. 3 Relative Variation of Breakover Voltage vs. Junction Temperature 1.5 2 2.5 3 3.5 4 5 4.5 VT, ON-STATE VOLTAGE (V) Fig. 4 On-State Current vs. On-State Voltage 1 1.4 1.3 1.2 NORMALIZED CAPACITANCE NORMALIZED HOLDING CURRENT NEW PRODUCT 100 1.1 1 0.9 0.8 0.7 0.6 0.5 IH = (TJ) Tj = 25°C f = 1 Mhz VRMS = 1V CO= (VR) CO = (VR = 1V) IH = (TJ = 25°C) 0.4 0.1 0.3 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 Relative Variation of Holding Current vs. Junction Temperature DS30361 Rev. 4 - 2 3 of 4 www.diodes.com 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 6 Relative Variation of Junction Capacitance vs. Reverse Voltage Bias TB0640M - TB3500M NEW PRODUCT Ordering Information Notes: (Note 3) Device Packaging Shipping TB0640M-13 TB0720M-13 TB0900M-13 TB1100M-13 TB1300M-13 TB1500M-13 TB1800M-13 TB2300M-13 TB2600M-13 TB3100M-13 TB3500M-13 SMB 3000/Tape & Reel 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information XXXXX = Product Type Marking Code YWW = Date Code Marking Y = Year ex: 2 = 2002 WW = Week YWW XXXXX Date Code Key Year 2002 2003 2004 2005 2006 2007 2008 2009 Code 2 3 4 5 6 7 8 9 DS30361 Rev. 4 - 2 4 of 4 www.diodes.com TB0640M - TB3500M