VN10LFTA

SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET VN10LF ISSUE 2 – JANUARY 1996 FEATURES * 60 Volt VDS * RDS(on)=5Ω D PARTMARKING DETAIL – S MY G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 60 V Continuous Drain Current at T amb = 25°C ID 150 mA Pulsed Drain Current I DM 3 A Gate Source Voltage V GS ± 20 V Power Dissipation at T amb = 25°C P tot 330 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 60 Gate-Source Breakdown Voltage V GS(th) 0.8 Gate Body Leakage I GSS Zero Gate Voltage Drain Current (1) I DSS On State Drain Current(1) I D(on) Static Drain Source On State Resistance (1) R DS(on) Forward Transconductance (1)(2) g fs TYP. MAX. UNIT CONDITIONS. V I D=100µA, V GS=0V V I D =1mA, V DS= V GS 100 nA V GS=± 20V, V DS=0V 10 µA V DS=60 V, V GS=0V mA V DS=15 V, V GS=10V Ω Ω V GS=10V, I D=500mA V GS=5V, I D=200mA mS V DS=15V, I D=500mA 2.5 750 5.0 7.5 100 Input Capacitance (2) C iss 60 pF Common Source Output Capacitance (2) C oss 25 pF Reverse Transfer Capacitance (2) C rss 5 pF Turn-On Time (2)(3) t (on) 3 10 ns Turn-Off Time (2)(3) t (off) 4 10 ns V DS=25 V, V GS=0V f=1MHz V DD ≈15V, I D=600mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and