ZDM4306NTA

SM-8 DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS ZDM4306N ISSUE 1 - NOVEMBER 1995 D1 G1 D1 S1 D2 G2 D2 S2 SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – M4306N ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb=25°C ID 2 A Pulsed Drain Current IDM 15 A Gate-Source Voltage VGS ± 20 V Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C THERMAL CHARACTERISTICS PARAMETER SYMBOL Total Power Dissipation at Tamb = 25°C* Any single die “on” Both die “on” equally Ptot Derate above 25°C* Any single die “on” Both die “on” equally Thermal Resistance - Junction to Ambient* Any single die “on” Both die “on” equally VALUE UNIT 2.5 3.0 W W 20 24 mW/ °C mW/ °C 50.0 41.6 °C/ W °C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. Note: This data is derived from development material and does not necessarily mean that the device will go into production 3 - 321 ZDM4306N ZDM4306N SYMBOL MIN. Drain-Source Breakdown Voltage BVDSS Gate-Source Threshold Voltage VGS(th) Gate-Body Leakage IGSS TYP. MAX. UNIT CONDITIONS. 12 V 1.3 IDSS ID=1mA, VGS=0V 11 10 9 8 7 6 5 3 V ID=1mA, VDS= VGS 100 nA VGS=± 20V, VDS=0V 10 100 µA µA VDS=60V, VGS=0 VDS=48V, VGS=0V, T=125°C(2) ID - Drain Current (Amps) Zero Gate Voltage Drain Current 60 7V 6V 5V 4 3 2 1 4V 3.5V 3V 0 On-State Drain Current(1) ID(on) Static Drain-Source On-State Resistance (1) RDS(on) Forward Transconductance (1)(2) gfs A 1 2 3 4 5 6 7 8 9 10 VDS - Drain Source Voltage (Volts) 0.22 0.32 0.33 0.45 700 Ciss 350 Ω Ω VGS=10V,ID=3A VGS=5V, ID=1.5A mS VDS=25V,ID=3A pF Common Source Output Coss Capacitance (2) 140 pF Reverse Transfer Capacitance (2) 30 pF Turn-On Delay Time (2)(3) 0 VDS=10V, VGS=10V Crss td(on) 8 VDS=25 V, VGS=0V, f=1MHz ns Saturation Characteristics 2.4 tr 25 ns Turn-Off Delay Time (2)(3) td(off) 30 ns Fall Time (2)(3) tf 16 ns n) (o DS 2.0 1.8 s Re ce ur o -S ain Dr 1.6 1.4 1.2 a ist eR nc VGS=VDS ID=1mA 1.0 0.8 0.6 -50 -25 Gate Threshold Voltage VGS(TH) 0 25 50 75 100 125 150 175 200 225 8V 10V 0.1 0.1 1 100 10 ID-Drain Current (Amps) 4 3 VDS=10V 2 1 0 0 2 8 10 12 14 300 Ciss 100 Coss Crss 0 10 20 30 40 50 60 70 80 VDS-Drain Source Voltage (Volts) VGS-Gate Source Voltage (Volts) 400 200 16 18 20 Transconductance v drain current VDD= 20V 40V 60V 16 500 C-Capacitance (pF) 6 4 ID(on)- Drain Current (Amps) Tj-Junction Temperature (°C) 0 14 ID=3A 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 9 10 11 12 Q-Charge (nC) Capacitance v drain-source voltage 3 - 322 1.0 5 Normalised RDS(on) and VGS(th) v Temperature 1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and