ZDS1009TA

ZDS1009 SM-8 COMPLEMENTARY CURRENT MIRROR DESCRIPTION The ZDS1009 current mirror has been developed specifically for high side, current sense plus level translation applications and as such will find a broad a p p l i c at i ons bas e i nc l udi ng bat t e r y ch a r g e management, DC motor control and over current monitoring functions. It is of particular interest for current sense applications for feedback purposes in fast battery chargers for Li-Ion cell based systems. The device functions by sensing the voltage developed across an external (user defined) high side current sense resistor, and by an arrangement of current mirrors refer this sensed voltage, with or without multiplication, to a low side referenced signal. This signal can then be used, for example, to close the control loop to a controller IC, for a DC-DC converter providing charge to a battery. FEATURES • Excellent Temperature Tracking Characteristics • Compact Cost Effective Solution • Simplifies Circuit Implementation • Broad application base from Single Cell Li-ion High Side Current sense chargers to Multi-cell Lead-Acid systems • Only 4 Connections required SCHEMATIC DIAGRAM SM-8 (8 LEAD SOT223) TYPICAL APPLICATION CIRCUIT Vsense = IR2 R 4 R 1 For balance R3=R4 eg R2=100mΩ R1=R3=R4=100Ω Vsense sensitivity = 100mV/A CONNECTION DIAGRAM ISSUE 2 - JANUARY 2000 1 ZDS1009 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Maximum Operating Voltage V y1-x1 120 V Maximum Voltage (E1-E2,E3-E4) V E-E’ 10 V Peak Pulse Current IM 4 A Continuous Current (E1-E4,E2-E3) IC 1 A Total Power Dissipation at T amb = 25°C* Operating and Storage Temperature Range P tot 2 W -55 to +150 °C T j :T stg * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. ELECTRICAL CHARACTERISTICS (at Tamb=25°C) Parameter Symbol Min Unit Conditions Breakdown Voltage BV Y1-X1 120 Max V I Y1 =100µA Breakdown Voltage BV X1-E1 -30 V I X1 =-10mA Breakdown Voltage BV Y1-E3 30 V I Y1 =10mA Breakdown Voltage BV E1-Y1 -12 V I E1 =-100µA Breakdown Voltage BV E2-Y1 -6 V I E2 =-100µA Breakdown Voltage BV E3-X1 12 V I E3 =100µA 6 Breakdown Voltage BV E4-X1 V I E4 =100uA Leakage I Y1 50 nA V Y1-X1 =100V Leakage I X1 -10 µA V X1-E1 =-30V, V y1 =V E1 Leakage I Y1 10 µA V Y1-E3 =30V,V X1 =V E3 Leakage I E1 -100 nA V E1-Y1 =-8V Leakage I E2 -100 nA V E2-Y1 =-4V Leakage I E3 100 nA V E3-X1 =8V Leakage I E4 100 nA V E4-X1 =4V Input Voltage V Y1-E2 -1.45 -1.65 V I Y1 =-1A Input Voltage V Y1-E3 1.45 1.75 V I Y1 =1A,V X1 =V Y1 Input Voltage V X1-E1 -1.45 -1.75 V I X1 =-1A,V X1 =V Y1 Input Voltage V X1-E4 1.45 1.65 V Transfer Characteristic V OUT 0.99 1.01 V See Fig 1.V CC =5V R1=R3=R4=100Ω, V IN =1V Transfer Characteristic V OUT 1 mV See Fig 1.V CC =5V R1=R3=R4=100Ω, V IN =5mV Output Zero-Offset Voltage V OFFSET mV See Fig 2.V CC =5V,R 2