ZDT1049TA

SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ZDT1049 ISSUE 1 – JANUARY 1996 C1 B1 C1 E1 C2 B2 C2 E2 SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T1049 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 20 A Continuous Collector Current IC 5 A 500 mA -55 to +150 °C Base Current IB Operating and Storage Temperature Range Tj:Tstg THERMAL CHARACTERISTICS PARAMETER SYMBOL Total Power Dissipation at Tamb = 25°C* Any single die “on” Both die “on” equally Ptot Derate above 25°C* Any single die “on” Both die “on” equally Thermal Resistance - Junction to Ambient* Any single die “on” Both die “on” equally VALUE UNIT 2.25 2.75 W W 18 22 mW/ °C mW/ °C 55.6 45.5 °C/ W °C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. 3 - 360 ZDT1049 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V(BR)CBO 80 Collector-Emitter Breakdown Voltage VCES Collector-Emitter Breakdown Voltage VCEO Collector-Emitter Breakdown Voltage VCEV Emitter-Base Breakdown Voltage V(BR)EBO Collector Cut-Off Current ICBO 0.3 Emitter Cut-Off Current IEBO Collector Emitter Cut-Off Current ICES UNIT CONDITIONS. 120 V IC=100µA 80 120 V IC=100µA 25 35 V IC=10mA TYPICAL CHARACTERISTICS 1.0 1.0 +25°C 0.8 0.8 0.6 0.6 IC/IB=10 IC/IB=50 IC/IB=100 IC/IB=200 0.4 80 5 120 V 8.75 IC=100µA, VEB=1V V IE=100µA 10 nA VCB=50V 0.3 10 nA VEB=4V 0.3 10 nA VCES=50V 0 Base-Emitter Saturation Voltage VBE(sat) Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE 45 80 180 220 mV mV mV mV IC=0.5A, IB=10mA* IC=1A, IB=10mA* IC=2A, IB=10mA* IC=4A, IB=50mA* 890 950 mV IC=4A, IB=50mA* -55°C +25°C +100°C +175°C 0.2 1mA 10mA 100mA 1A 10A 100A 0 1mA VCE(sat) v IC 500 300 1.4 1.2 fT 250 300 300 200 35 430 450 450 350 70 900 mV 1200 180 0.4 100 0.2 10mA 100mA 1A 10A 100A 0 10mA VCB=10V, f=1MHz Turn - On Time ton 125 ns IC=4A, IB=40mA, VCC=10V Turn -Off Time toff 380 ns IC=4A, IB=±40mA, VCC=10V 60 100 VCE=2V -55°C +25°C +100°C 0.8 +175°C pF 45 Singe Pulse Test Tamb = 25°C 10 1 0.4 0 1mA 0.1 10mA 100mA 1A 10A 100A IC-Collector Current DC 1s 100ms 10ms 1ms 100µs 0.1 0.1V 1V 10V VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 361 100A VBE(sat) v IC 1.0 0.2 Cobo 1A 1.2 0.6 Output Capacitance 100mA IC-Collector Current hFE V IC IC=50mA, VCE=10V f=50MHz MHz 10A IC/IB=100 0.6 -55°C 200 1.4 100A 1.0 +25°C IC=4A, VCE=2V* IC=10mA, VCE=2V* IC=0.5A, VCE=2V* IC=1A, VCE=2V* IC=4A, VCE=2V* IC=20A, VCE=2V* 10A -55°C +25°C +100°C 0.8 +175°C +100°C 0 1mA 1A VCE(sat) v IC 700 VCE=2V 600 100mA IC-Collector Current IC-Collector Current 820 10mA IC-Collector Current 400 30 60 125 155 IC/IB=100 0.4 0.2 Collector-Emitter Saturation VCE(sat) Voltage Transition Frequency MAX. ZDT1049 3 - 362 100V ZDT1049 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V(BR)CBO 80 Collector-Emitter Breakdown Voltage VCES Collector-Emitter Breakdown Voltage VCEO Collector-Emitter Breakdown Voltage VCEV Emitter-Base Breakdown Voltage V(BR)EBO Collector Cut-Off Current ICBO 0.3 Emitter Cut-Off Current IEBO Collector Emitter Cut-Off Current ICES UNIT CONDITIONS. 120 V IC=100µA 80 120 V IC=100µA 25 35 V IC=10mA TYPICAL CHARACTERISTICS 1.0 1.0 +25°C 0.8 0.8 0.6 0.6 IC/IB=10 IC/IB=50 IC/IB=100 IC/IB=200 0.4 80 5 120 V 8.75 IC=100µA, VEB=1V V IE=100µA 10 nA VCB=50V 0.3 10 nA VEB=4V 0.3 10 nA VCES=50V 0 Base-Emitter Saturation Voltage VBE(sat) Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE 45 80 180 220 mV mV mV mV IC=0.5A, IB=10mA* IC=1A, IB=10mA* IC=2A, IB=10mA* IC=4A, IB=50mA* 890 950 mV IC=4A, IB=50mA* -55°C +25°C +100°C +175°C 0.2 1mA 10mA 100mA 1A 10A 100A 0 1mA VCE(sat) v IC 500 300 1.4 1.2 fT 250 300 300 200 35 430 450 450 350 70 900 mV 1200 180 0.4 100 0.2 10mA 100mA 1A 10A 100A 0 10mA VCB=10V, f=1MHz Turn - On Time ton 125 ns IC=4A, IB=40mA, VCC=10V Turn -Off Time toff 380 ns IC=4A, IB=±40mA, VCC=10V 60 100 VCE=2V -55°C +25°C +100°C 0.8 +175°C pF 45 Singe Pulse Test Tamb = 25°C 10 1 0.4 0 1mA 0.1 10mA 100mA 1A 10A 100A IC-Collector Current DC 1s 100ms 10ms 1ms 100µs 0.1 0.1V 1V 10V VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 361 100A VBE(sat) v IC 1.0 0.2 Cobo 1A 1.2 0.6 Output Capacitance 100mA IC-Collector Current hFE V IC IC=50mA, VCE=10V f=50MHz MHz 10A IC/IB=100 0.6 -55°C 200 1.4 100A 1.0 +25°C IC=4A, VCE=2V* IC=10mA, VCE=2V* IC=0.5A, VCE=2V* IC=1A, VCE=2V* IC=4A, VCE=2V* IC=20A, VCE=2V* 10A -55°C +25°C +100°C 0.8 +175°C +100°C 0 1mA 1A VCE(sat) v IC 700 VCE=2V 600 100mA IC-Collector Current IC-Collector Current 820 10mA IC-Collector Current 400 30 60 125 155 IC/IB=100 0.4 0.2 Collector-Emitter Saturation VCE(sat) Voltage Transition Frequency MAX. ZDT1049 3 - 362 100V