ZDT619TA

SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ZDT619 ISSUE 1 - NOVEMBER 1995 ZDT619 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). C1 B1 C1 E1 C2 B2 C2 E2 SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T619 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO 50 Collector-Emitter Breakdown Voltage V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO Collector Cutoff Current ICBO TYP. MAX. UNIT CONDITIONS. 190 V IC=100µ A 50 65 V IC=10mA* 5 8.3 V IE=100µ A 100 nA VCB=40V Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter Cutoff Current IEBO 100 nA VEB=4V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 6 A Collector Emitter Cutoff Current ICES 100 nA VCES=40V Continuous Collector Current IC Operating and Storage Temperature Range Tj:Tstg 2 A -55 to +150 °C Collector-Emitter Saturation Voltage VCE(sat) 12 125 150 20 200 220 mV mV mV IC=0.1A, IB=10mA* IC=1A, IB=10mA* IC=2A, IB=50mA* VALUE UNIT Base-Emitter Saturation Voltage VBE(sat) 0.87 1.0 V IC=2A, IB=50mA* 2 2.5 W W Base-Emitter Turn-On Voltage VBE(on) 0.80 1.0 V IC=2A, VCE=2V* 16 20 mW/ °C mW/ °C 62.5 50 °C/ W °C/ W THERMAL CHARACTERISTICS PARAMETER SYMBOL Total Power Dissipation at Tamb = 25°C* Any single die “on” Both die “on” equally Ptot Derate above 25°C* Any single die “on” Both die “on” equally Thermal Resistance - Junction to Ambient* Any single die “on” Both die “on” equally * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. Static Forward Current hFE Transfer Ratio 200 300 200 100 400 450 400 225 40 Transition Frequency fT 100 165 Output Capacitance Cobo 12 Turn-On Time ton Turn-Off Time t off IC=10mA, VCE=2V* IC=200mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* IC=6A, VCE=2V* MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz 170 ns 750 ns VCC=10V, IC=1A IB1=-IB2=10mA 20 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 330 3 - 331 SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ZDT619 ISSUE 1 - NOVEMBER 1995 ZDT619 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). C1 B1 C1 E1 C2 B2 C2 E2 SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T619 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO 50 Collector-Emitter Breakdown Voltage V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO Collector Cutoff Current ICBO TYP. MAX. UNIT CONDITIONS. 190 V IC=100µ A 50 65 V IC=10mA* 5 8.3 V IE=100µ A 100 nA VCB=40V Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter Cutoff Current IEBO 100 nA VEB=4V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 6 A Collector Emitter Cutoff Current ICES 100 nA VCES=40V Continuous Collector Current IC Operating and Storage Temperature Range Tj:Tstg 2 A -55 to +150 °C Collector-Emitter Saturation Voltage VCE(sat) 12 125 150 20 200 220 mV mV mV IC=0.1A, IB=10mA* IC=1A, IB=10mA* IC=2A, IB=50mA* VALUE UNIT Base-Emitter Saturation Voltage VBE(sat) 0.87 1.0 V IC=2A, IB=50mA* 2 2.5 W W Base-Emitter Turn-On Voltage VBE(on) 0.80 1.0 V IC=2A, VCE=2V* 16 20 mW/ °C mW/ °C 62.5 50 °C/ W °C/ W THERMAL CHARACTERISTICS PARAMETER SYMBOL Total Power Dissipation at Tamb = 25°C* Any single die “on” Both die “on” equally Ptot Derate above 25°C* Any single die “on” Both die “on” equally Thermal Resistance - Junction to Ambient* Any single die “on” Both die “on” equally * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. Static Forward Current hFE Transfer Ratio 200 300 200 100 400 450 400 225 40 Transition Frequency fT 100 165 Output Capacitance Cobo 12 Turn-On Time ton Turn-Off Time t off IC=10mA, VCE=2V* IC=200mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* IC=6A, VCE=2V* MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz 170 ns 750 ns VCC=10V, IC=1A IB1=-IB2=10mA 20 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 330 3 - 331 ZDT619 3 - 332