ZDT649TA

SM-8 DUAL NPN MEDIUM POWER TRANSISTORS ZDT649 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T649 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 35 Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 6 A Continuous Collector Current IC Operating and Storage Temperature Range Tj:Tstg V 2 A -55 to +150 °C THERMAL CHARACTERISTICS PARAMETER SYMBOL Total Power Dissipation at Tamb = 25°C* Any single die “on” Both die “on” equally Ptot Derate above 25°C* Any single die “on” Both die “on” equally Thermal Resistance - Junction to Ambient* Any single die “on” Both die “on” equally VALUE UNIT 2.25 2.75 W W 18 22 mW/ °C mW/ °C 55.6 45.5 °C/ W °C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. 3 - 333 ZDT649 ZDT649 TYPICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). V(BR)CBO Collector-Emitter Breakdown Voltage V(BR)CEO MAX. 35 CONDITIONS. V IC=100µ A V IC=10mA* 220 Emitter-Base Breakdown Voltage V(BR)EBO 5 V 180 0.6 IC/IB=10 100 ICBO 0.1 10 µA µA VCB=30V VCB=30V,T amb =100°C Emitter Cutoff Current IEBO 0.1 µA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.3 0.5 V V IC=1A, IB=100mA* IC=2A, IB=200mA* 140 80 0.2 60 IE=100µ A Collector Cutoff Current VCE=2V 160 120 0.4 40 0 0.12 0.23 200 0.8 V 25 UNIT - Gain Collector-Base Breakdown Voltage TYP. h SYMBOL MIN. - (Volts) PARAMETER 0.01 0.1 1 10 0.001 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 2.2 10 1.4 2.0 Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE 0.9 1.25 V IC=1A, IB=100mA* 1.8 1.2 0.8 1 V IC=1A, VCE=2V* - (Volts) 1.6 1.4 1.2 IC/IB=10 150 240 IC=50mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* IC=6A, VCE=2V* 300 MHz IC=100mA, VCE=5V f=100MHz pF VCB=10V f=1MHz 55 ns 300 ns IC=500mA, VCC=10V IB1=IB2=50mA Transition Frequency fT Output Capacitance Cobo 25 Switching Times ton toff 50 0.8 0.8 V 200 200 150 50 1.0 VCE=2V 1.0 70 100 75 15 - (Volts) VBE(sat) V Base-Emitter Saturation Voltage 0.6 0.6 0.4 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC 10 td tr IB1=IB2=IC/10 tf ns 140 td 120 Switching time *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 1 ts ns 100 80 1000 tr 800 tf 600 60 ts 40 400 20 200 0 0 0.01 0.1 IC - Collector Current (Amps) Switching Speeds 3 - 334 3 - 335 1 ZDT649 ZDT649 TYPICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). V(BR)CBO Collector-Emitter Breakdown Voltage V(BR)CEO MAX. 35 CONDITIONS. V IC=100µ A V IC=10mA* 220 Emitter-Base Breakdown Voltage V(BR)EBO 5 V 180 0.6 IC/IB=10 100 ICBO 0.1 10 µA µA VCB=30V VCB=30V,T amb =100°C Emitter Cutoff Current IEBO 0.1 µA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.3 0.5 V V IC=1A, IB=100mA* IC=2A, IB=200mA* 140 80 0.2 60 IE=100µ A Collector Cutoff Current VCE=2V 160 120 0.4 40 0 0.12 0.23 200 0.8 V 25 UNIT - Gain Collector-Base Breakdown Voltage TYP. h SYMBOL MIN. - (Volts) PARAMETER 0.01 0.1 1 10 0.001 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 2.2 10 1.4 2.0 Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE 0.9 1.25 V IC=1A, IB=100mA* 1.8 1.2 0.8 1 V IC=1A, VCE=2V* - (Volts) 1.6 1.4 1.2 IC/IB=10 150 240 IC=50mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* IC=6A, VCE=2V* 300 MHz IC=100mA, VCE=5V f=100MHz pF VCB=10V f=1MHz 55 ns 300 ns IC=500mA, VCC=10V IB1=IB2=50mA Transition Frequency fT Output Capacitance Cobo 25 Switching Times ton toff 50 0.8 0.8 V 200 200 150 50 1.0 VCE=2V 1.0 70 100 75 15 - (Volts) VBE(sat) V Base-Emitter Saturation Voltage 0.6 0.6 0.4 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC 10 td tr IB1=IB2=IC/10 tf ns 140 td 120 Switching time *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 1 ts ns 100 80 1000 tr 800 tf 600 60 ts 40 400 20 200 0 0 0.01 0.1 IC - Collector Current (Amps) Switching Speeds 3 - 334 3 - 335 1