ZDT651TA

SM-8 DUAL NPN MEDIUM POWER TRANSISTORS ZDT651 ISSUE 2 - AUGUST 1997 C1 B1 C1 E1 C2 B2 C2 E2 SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T651 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 6 A Continuous Collector Current IC Operating and Storage Temperature Range Tj:Tstg 2 A -55 to +150 °C THERMAL CHARACTERISTICS PARAMETER SYMBOL Total Power Dissipation at Tamb = 25°C* Any single die “on” Both die “on” equally Ptot Derate above 25°C* Any single die “on” Both die “on” equally Thermal Resistance - Junction to Ambient* Any single die “on” Both die “on” equally VALUE UNIT 2.25 2.75 W W 18 22 mW/ °C mW/ °C 55.6 45.5 °C/ W °C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. ZDT651 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage TYP. MAX. UNIT CONDITIONS. 80 V IC=100µ A V(BR)CEO 60 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µ A Collector Cutoff Current ICBO 0.1 10 µA µA VCB=60V VCB=60V,T amb =100°C Emitter Cutoff Current IEBO 0.1 µA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.12 0.23 0.3 0.5 V V IC=1A, IB=100mA* IC=2A, IB=200mA* Base-Emitter Saturation Voltage VBE(sat) 0.9 1.25 V IC=1A, IB=100mA* Base-Emitter Turn-On Voltage VBE(on) 0.8 1 V IC=1A, VCE=2V* Static Forward Current Transfer Ratio hFE 70 100 80 40 200 200 170 80 Transition Frequency fT 140 175 Output Capacitance Cobo Switching Times ton toff IC=50mA, VCE=2V* IC=500mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* 300 MHz IC=100mA, VCE=5V f=100MHz pF VCB=10V f=1MHz 45 ns 800 ns IC=500mA, VCC=10V IB1=IB2=50mA 30 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% ZDT651 TYPICAL CHARACTERISTICS 0.6 0.5 IC/IB=10 175 - Gain - (Volts) 225 0.4 0.3 VCE=2V 125 V h 0.2 0.1 0 75 0.0001 0.001 0.01 0.1 1 0 10 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 10 1.4 1.2 1.0 1.0 - (Volts) - (Volts) 1.2 IC/IB=10 VCE=2V 0.8 V 0.8 V 0.6 0.6 0.4 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC 1 10 td IB1=IB2=IC/10 tr tf ts ns ns Switching time 140 1400 120 1200 100 1000 80 800 60 600 40 400 20 200 0 0 0.01 ts td tf tr 0.1 IC - Collector Current (Amps) Switching Speeds 1