ZDT6705TA

SM-8 COMPLEMENTARY MEDIUM POWER DARLINGTON TRANSISTORS ZDT6705 ISSUE 1 - NOVEMBER 1995 C1 ZDT6705 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T6705 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage VCBO 140 -140 V Collector-Emitter Voltage VCEO 120 -120 V Emitter-Base Voltage VEBO 10 -10 V Peak Pulse Current ICM 4 -4 A Continuous Collector Current IC 1 -1 Operating and Storage Temperature Range Tj:Tstg -55 to +150 A °C THERMAL CHARACTERISTICS PARAMETER SYMBOL Total Power Dissipation at Tamb = 25°C* Any single die “on” Both die “on” equally Ptot Derate above 25°C* Any single die “on” Both die “on” equally Thermal Resistance - Junction to Ambient* Any single die “on” Both die “on” equally VALUE UNIT 2.25 2.75 W W 18 22 mW/ °C mW/ °C 55.6 45.5 °C/ W °C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage TYP. UNIT CONDITIONS. 140 V IC=100µ A V(BR)CEO 120 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 10 V IE=100µ A Collector Cutoff Current ICBO 0.01 10 µA µA VCB=120V VCB=120V, T amb =100°C Emitter Cutoff Current IEBO 0.1 µA VEB=8V Colllector-Emitter Cutoff Current ICES 10 µA VCES=120V Collector-Emitter Saturation Voltage VCE(sat) 1.0 1.5 V V IC=250mA, IB=0.25mA* IC=1A, IB=1mA* Base-Emitter Saturation Voltage VBE(sat) 1.8 V IC=1A, IB=1mA* Base-Emitter Turn-On Voltage VBE(on) 1.7 V IC=1A, VCE=5V* Static Forward Current Transfer Ratio hFE Transition Frequency fT Input Capacitance Cibo Output Capacitance Switching Times 2K 5K 2K 0.5K MAX. IC=50mA, VCE=5V IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=2A, VCE=5V* 100K 150 MHz IC=100mA, VCE=10V f=20MHz 90 pF VEB=500mV, f=1MHz Cobo 15 pF VCB=10V, f=1MHz ton 0.5 µs toff 1.6 µs IC=500mA, VCE=10V IB1=IB2=0.5mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical characteristics graphs see ZDT605 datasheet. 3 - 369 3 - 370 SM-8 COMPLEMENTARY MEDIUM POWER DARLINGTON TRANSISTORS ZDT6705 ISSUE 1 - NOVEMBER 1995 C1 ZDT6705 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T6705 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage VCBO 140 -140 V Collector-Emitter Voltage VCEO 120 -120 V Emitter-Base Voltage VEBO 10 -10 V Peak Pulse Current ICM 4 -4 A Continuous Collector Current IC 1 -1 Operating and Storage Temperature Range Tj:Tstg -55 to +150 A °C THERMAL CHARACTERISTICS PARAMETER SYMBOL Total Power Dissipation at Tamb = 25°C* Any single die “on” Both die “on” equally Ptot Derate above 25°C* Any single die “on” Both die “on” equally Thermal Resistance - Junction to Ambient* Any single die “on” Both die “on” equally VALUE UNIT 2.25 2.75 W W 18 22 mW/ °C mW/ °C 55.6 45.5 °C/ W °C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage TYP. UNIT CONDITIONS. 140 V IC=100µ A V(BR)CEO 120 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 10 V IE=100µ A Collector Cutoff Current ICBO 0.01 10 µA µA VCB=120V VCB=120V, T amb =100°C Emitter Cutoff Current IEBO 0.1 µA VEB=8V Colllector-Emitter Cutoff Current ICES 10 µA VCES=120V Collector-Emitter Saturation Voltage VCE(sat) 1.0 1.5 V V IC=250mA, IB=0.25mA* IC=1A, IB=1mA* Base-Emitter Saturation Voltage VBE(sat) 1.8 V IC=1A, IB=1mA* Base-Emitter Turn-On Voltage VBE(on) 1.7 V IC=1A, VCE=5V* Static Forward Current Transfer Ratio hFE Transition Frequency fT Input Capacitance Cibo Output Capacitance Switching Times 2K 5K 2K 0.5K MAX. IC=50mA, VCE=5V IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=2A, VCE=5V* 100K 150 MHz IC=100mA, VCE=10V f=20MHz 90 pF VEB=500mV, f=1MHz Cobo 15 pF VCB=10V, f=1MHz ton 0.5 µs toff 1.6 µs IC=500mA, VCE=10V IB1=IB2=0.5mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical characteristics graphs see ZDT605 datasheet. 3 - 369 3 - 370 ZDT6705 PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage TYP. UNIT CONDITIONS. -140 V IC=-100µ A VCEO(SUS) -120 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -10 V IE=-100µ A Collector Cutoff Current ICBO -0.1 -10 µA µA VCB=-120V VCB=-120V, Tamb=100°C Collector-Emitter Cutoff Current ICES -10 µA VCES=-80V Emitter Cutoff Current IEBO -0.1 µA VEB=-8V Collector-Emitter Saturation Voltage VCE(sat) -1.3 -2.5 V V IC=-1A, IB=-1mA* IC=-2A, IB=-2mA* Base-Emitter Saturation Voltage VBE(sat) -1.8 V IC=-1A, IB=-10mA* Base-Emitter Turn-On Voltage VBE(on) -1.7 V IC=-1A, VCE=-5V* Static Forward Current Transfer Ratio hFE Transition Frequency fT 160 MHz IC=-100mA, VCE=-10V f=20MHz Input Capacitance Cibo 90 pF VEB=-0.5V, f=1MHz Output Capacitance Cobo 15 pF VCE=-10V, f=1MHz Switching Times ton 0.6 µs toff 0.8 µs IC=-0.5A, VCE=-10V IB1=IB2=-0.5mA 3K 3K 3K 2K MAX. IC=-10mA, VCE=-5V* IC=-100mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-2A, VCE=-5V* 30K *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical characteristics graphs see ZDT705 datasheet. 3 - 371