ZDT6757TA

SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6757 ZDT6757 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). NPN PNP SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T6757 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage VCBO 300 -300 V Collector-Emitter Voltage VCEO 300 -300 V Emitter-Base Voltage VEBO 5 -5 V Peak Pulse Current ICM 1 -1 A Continuous Collector Current IC 0.5 -0.5 Operating and Storage Temperature Range Tj:Tstg -55 to +150 A °C THERMAL CHARACTERISTICS PARAMETER SYMBOL Total Power Dissipation at Tamb = 25°C* Any single die “on” Both die “on” equally Ptot Derate above 25°C* Any single die “on” Both die “on” equally Thermal Resistance - Junction to Ambient* Any single die “on” Both die “on” equally SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 300 V IC=100µ A, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 300 V IC=10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µ A, IC=0 Collector Cutoff Current ICBO 100 nA VCB=200V, IE=0 Emitter Cutoff Current IEBO 100 nA VEB=3V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) 0.5 V IC=100mA, IB=10mA* Base-Emitter Saturation Voltage VBE(sat) 1 V IC=100mA, IB=10mA* 1 V IC=100mA, VCE=5V* VALUE UNIT Base-Emitter Turn-On Voltage VBE(on) 2.25 2.75 W W Static Forward Current Transfer Ratio hFE 50 40 18 22 mW/ °C mW/ °C Transition Frequency fT 30 Output Capacitance 55.6 45.5 °C/ W °C/ W Cobo * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. 3 - 378 PARAMETER TYP. MAX. IC=100mA, VCE=5V IC=10mA, VCE=5V 20 MHz IC=10mA, VCE=20V f=20MHz pF VCB=20V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical characteristics graphs see FZT657 datasheet. 3 - 379 SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6757 ZDT6757 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). NPN PNP SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T6757 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage VCBO 300 -300 V Collector-Emitter Voltage VCEO 300 -300 V Emitter-Base Voltage VEBO 5 -5 V Peak Pulse Current ICM 1 -1 A Continuous Collector Current IC 0.5 -0.5 Operating and Storage Temperature Range Tj:Tstg -55 to +150 A °C THERMAL CHARACTERISTICS PARAMETER SYMBOL Total Power Dissipation at Tamb = 25°C* Any single die “on” Both die “on” equally Ptot Derate above 25°C* Any single die “on” Both die “on” equally Thermal Resistance - Junction to Ambient* Any single die “on” Both die “on” equally SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 300 V IC=100µ A, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 300 V IC=10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µ A, IC=0 Collector Cutoff Current ICBO 100 nA VCB=200V, IE=0 Emitter Cutoff Current IEBO 100 nA VEB=3V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) 0.5 V IC=100mA, IB=10mA* Base-Emitter Saturation Voltage VBE(sat) 1 V IC=100mA, IB=10mA* 1 V IC=100mA, VCE=5V* VALUE UNIT Base-Emitter Turn-On Voltage VBE(on) 2.25 2.75 W W Static Forward Current Transfer Ratio hFE 50 40 18 22 mW/ °C mW/ °C Transition Frequency fT 30 Output Capacitance 55.6 45.5 °C/ W °C/ W Cobo * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. 3 - 378 PARAMETER TYP. MAX. IC=100mA, VCE=5V IC=10mA, VCE=5V 20 MHz IC=10mA, VCE=20V f=20MHz pF VCB=20V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical characteristics graphs see FZT657 datasheet. 3 - 379 ZDT6757 PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage TYP. MAX. UNIT CONDITIONS. -300 V IC=-100µ A, IE=0 V(BR)CEO -300 V IC=-10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µ A, IC=0 Collector Cutoff Current ICBO -100 nA nA VCB=-160V, IE=0 VCB=-200V, IE=0 Emitter Cutoff Current IEBO -100 nA VEB=-3V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) -0.5 V IC=-100mA, IB=-10mA* Base-Emitter Saturation Voltage VBE(sat) -1.0 V IC=-100mA, IB=-10mA* Base-Emitter Turn-On Voltage VBE(on) -1.0 V IC=-100mA, VCE=-5V* Static Forward Current Transfer Ratio hFE 50 40 Transition Frequency fT 30 Output Capacitance Cobo IC=-100mA, VCE=-5V* IC=-10mA, VCE=-5V* 20 MHz IC=-10mA, VCE=-20V f=20MHz pF VCB=-20V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical characteristics graphs see FZT757 datasheet. 3 - 380