ZDT6758TA

SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6758 ISSUE 1 - JUNE 1999 C1 B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 (8 LEAD SOT223) PARTMARKING DETAIL -- T6758 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage V CBO 400 -400 V Collector-Emitter Voltage V CEO 400 -400 V Emitter-Base Voltage V EBO 5 -5 V Peak Pulse Current I CM 1 -1 A Continuous Collector Current IC 0.5 -0.5 Operating and Storage Temperature Range T j:T stg -55 to +150 A °C THERMAL CHARACTERISTICS PARAMETER SYMBOL Total Power Dissipation at T amb = 25°C* Any single die ‘‘on’’ Both die ‘‘on’’equally P tot Derate above 25°C* Any single die ‘‘on’’ Both die ‘‘on’’equally Thermal Resistance - Junction to Ambient* Any single die ‘‘on’’ Both die ‘‘on’’equally VALUE UNIT 2.25 2.75 W W 18 22 mW/ °C mW/ °C 55.6 45.5 °C/ W °C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. ZDT6758 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V (BR)CBO Collector-Emitter Breakdown Voltage TYP. MAX. UNIT CONDITIONS. 400 V I C=100µA V (BR)CEO) 400 V I C=10mA* Emitter-Base Breakdown Voltage V (BR)EBO 5 V I E=100 µA Collector Cut-Off Current I CBO 100 nA V CE=320V Emitter Cut-Off Current I EBO 100 nA V EB=4V Collector-Emitter Saturation Voltage V CE(sat) 0.3 0.25 0.5 V V V I C=20mA, I B=1mA I C=50mA, I B=5mA* I C=100mA, I B=10mA* Base-Emitter Saturation Voltage V BE(sat) 0.9 V I C=100mA, I B=10mA* Base-Emitter Turn On Voltage V BE(on) 0.9 V IC=100mA, V CE=5V* Static Forward Current Transfer Ratio h FE 50 50 40 Transition Frequency fT 50 Collector-Base Breakdown Voltage C obo Switching times ton toff I C=1mA, V CE=5V* I C=100mA, V CE=5V* I C=200mA, V CE=10V* 10 130 3300 MHz I C=20mA, V CE=20V f=20MHz pF V CB=20V, f=1MHz ns ns I C=100mA, V C=100V I B1=10mA, I B2=-20mA * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% ZDT6758 PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V (BR)CBO Collector-Emitter Breakdown Voltage UNIT CONDITIONS. -400 V I C=-100 µA V CEO(SUS) -400 V I C=-10mA* Emitter-Base Breakdown Voltage V (BR)EBO -5 V I E=-100µA Collector Cutoff Current I CBO -100 nA V CB=-320V Collector Cutoff Current I CES -100 nA V CE=-320V Emitter Cutoff Current I EBO -100 nA V EB=-4V Collector-Emitter Saturation Voltage V CE(sat) -0.30 -0.25 -0.50 V V V I C=-20mA, I B=-1mA I C=-50mA, I B=-5mA* I C=-100mA, I B=-10mA* Base-Emitter Saturation Voltage V BE(sat) -0.9 V I C=-100mA, I B=-10mA* Base-Emitter Turn On Voltage V BE(on) -0.9 V I C =-100mA, V CE=-5V* Static Forward h FE Current Transfer Ratio 50 50 40 Transition Frequency fT 50 Output Capacitance C obo Switching times ton toff TYP. MAX. I C=-1mA, V CE=-5V I C=-100mA, V CE=-5V* I C=-200mA, V CE=-10V* 20 140 2000 MHz I C=-20mA, V CE=-20V f=20MHz pF V CB=-20V, f=1MHz ns ns I C=-100mA, V C=-100V I B1=10mA, I B2=-20mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%