ZDT690TA

SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ZDT690 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T690 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 45 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 6 A Continuous Collector Current IC Operating and Storage Temperature Range Tj:Tstg 2 A -55 to +150 °C THERMAL CHARACTERISTICS PARAMETER SYMBOL Total Power Dissipation at Tamb = 25°C* Any single die “on” Both die “on” equally Ptot Derate above 25°C* Any single die “on” Both die “on” equally Thermal Resistance - Junction to Ambient* Any single die “on” Both die “on” equally VALUE UNIT 2.25 2.75 W W 18 22 mW/ °C mW/ °C 55.6 45.5 °C/ W °C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. 3 - 339 ZDT690 ZDT690 TYPICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 45 V IC=100µ A Collector-Emitter Breakdown Voltage V(BR)CEO 45 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO Collector Cutoff Current ICBO IC/IB=10 0.6 V V IC=0.1A, IB=0.5mA* IC=1A, IB=5mA* Base-Emitter Saturation Voltage 0.9 V IC=1A, IB=10mA* VBE(sat) Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE fT 0.9 V IC=1A, VCE=2V* IC=100mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* 500 400 150 150 MHz IC=50mA, VCE=5V f=50MHz Input Capacitance Cibo 200 pF VEB=0.5V, f=1MHz Output Capacitance Cobo 16 pF VCB=10V, f=1MHz Switching Times ton toff 33 1300 ns ns IC=500mA, IB!=50mA IB2=50mA, VCC=10V 0 0 0.01 0.1 1 1.4 0.01 VCE=2V 1.6 1.5K 1.2 1.0 1K 0.8 0.6 1.4 IC/IB=100 1.2 1.0 0.6 0.4 0.2 0 0.01 0.1 10 1 0 1.6 - (Volts) -55°C +25°C +100°C +175°C 0.8 500 0.4 0 1 hFE v IC VBE(sat) v IC -55°C +25°C +100°C +175°C VCE=2V 1.0 0.6 0.4 0.2 0 0.1 IC - Collector Current (Amps) 1.2 0 0.01 IC - Collector Current (Amps) 0.8 V 10 VCE(sat) v IC 1.4 0.01 0.1 1 10 IC - Collector Current (Amps) VBE(on) v IC 3 - 340 1 VCE(sat) v IC 0.2 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 0.1 IC - Collector Current (Amps) +100°C +25°C -55°C 1.6 10 IC - Collector Current (Amps) - (Volts) 0.1 0.5 0.6 0.2 V Collector-Emitter Saturation VCE(sat) Voltage IC/IB=100 V VCB=35V VEB=4V IEBO 0.2 - Typical Gain µA -55°C +25°C +100°C +175°C 0.4 h 0.1 IE=100µ A V V - Normalised Gain 5 µA Transition Frequency 0.8 0.4 0.1 Emitter Cutoff Current Tamb=25°C IC/IB=200 IC/IB=100 0.8 - (Volts) MIN. - (Volts) SYMBOL h PARAMETER 3 - 341 10 ZDT690 ZDT690 TYPICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 45 V IC=100µ A Collector-Emitter Breakdown Voltage V(BR)CEO 45 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO Collector Cutoff Current ICBO IC/IB=10 0.6 V V IC=0.1A, IB=0.5mA* IC=1A, IB=5mA* Base-Emitter Saturation Voltage 0.9 V IC=1A, IB=10mA* VBE(sat) Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE fT 0.9 V IC=1A, VCE=2V* IC=100mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* 500 400 150 150 MHz IC=50mA, VCE=5V f=50MHz Input Capacitance Cibo 200 pF VEB=0.5V, f=1MHz Output Capacitance Cobo 16 pF VCB=10V, f=1MHz Switching Times ton toff 33 1300 ns ns IC=500mA, IB!=50mA IB2=50mA, VCC=10V 0 0 0.01 0.1 1 1.4 0.01 VCE=2V 1.6 1.5K 1.2 1.0 1K 0.8 0.6 1.4 IC/IB=100 1.2 1.0 0.6 0.4 0.2 0 0.01 0.1 10 1 0 1.6 - (Volts) -55°C +25°C +100°C +175°C 0.8 500 0.4 0 1 hFE v IC VBE(sat) v IC -55°C +25°C +100°C +175°C VCE=2V 1.0 0.6 0.4 0.2 0 0.1 IC - Collector Current (Amps) 1.2 0 0.01 IC - Collector Current (Amps) 0.8 V 10 VCE(sat) v IC 1.4 0.01 0.1 1 10 IC - Collector Current (Amps) VBE(on) v IC 3 - 340 1 VCE(sat) v IC 0.2 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 0.1 IC - Collector Current (Amps) +100°C +25°C -55°C 1.6 10 IC - Collector Current (Amps) - (Volts) 0.1 0.5 0.6 0.2 V Collector-Emitter Saturation VCE(sat) Voltage IC/IB=100 V VCB=35V VEB=4V IEBO 0.2 - Typical Gain µA -55°C +25°C +100°C +175°C 0.4 h 0.1 IE=100µ A V V - Normalised Gain 5 µA Transition Frequency 0.8 0.4 0.1 Emitter Cutoff Current Tamb=25°C IC/IB=200 IC/IB=100 0.8 - (Volts) MIN. - (Volts) SYMBOL h PARAMETER 3 - 341 10