ZDT717TC

SM-8 DUAL PNP MEDIUM POWER HIGH GAIN TRANSISTORS ZDT717 ZDT717 ISSUE 1 - NOVEMBER 1995 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). C1 B1 C1 E1 C2 B2 C2 E2 SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T717 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -12 V Collector-Emitter Voltage VCEO -12 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -10 A Continuous Collector Current IC -2.5 A Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C THERMAL CHARACTERISTICS PARAMETER SYMBOL Total Power Dissipation at Tamb = 25°C* Any single die “on” Both die “on” equally Ptot Derate above 25°C* Any single die “on” Both die “on” equally Thermal Resistance - Junction to Ambient* Any single die “on” Both die “on” equally SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V(BR)CBO -12 -35 V IC=-100µ A Collector-Emitter Breakdown Voltage V(BR)CEO -12 -25 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 -8.5 V IE=-100µ A Collector Cutoff Current ICBO -100 nA VCB=-10V Emitter Cutoff Current IEBO -100 nA VEB=-4V Collector Emitter Cutoff Current ICES -100 nA VCES=-10V Collector-Emitter Saturation Voltage VCE(sat) -10 -100 -110 -180 -17 -140 -170 -220 mV mV mV mV IC=-0.1A, IB=-10mA* IC=-1A, IB=-10mA* IC=-1.5A, IB=-50mA* IC=-2.5A, IB=-50mA* Base-Emitter Saturation Voltage VBE(sat) -0.9 -1.0 V IC=-2.5A, IB=-50mA* -0.8 -1.0 V IC=-2.5A, VCE=-2V* VALUE UNIT Base-Emitter Turn-On Voltage VBE(on) 2 2.5 W W Static Forward Current Transfer Ratio hFE 16 20 mW/ °C mW/ °C 300 300 180 60 45 475 450 275 100 70 Transition Frequency fT 80 110 62.5 50 °C/ W °C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. 3 - 348 PARAMETER MAX. UNIT CONDITIONS. IC=-10mA, VCE=-2V* IC=-100mA, VCE=-2V* IC=-2.5A, VCE=-2V* IC=-8A, VCE=-2V* IC=-10A, VCE=-2V* 30 MHz IC=-50mA, VCE=-10V f=100MHz Output Capacitance Cobo 21 pF VCB=-10V, f=1MHz Turn-On Time ton 70 ns Turn-Off Time toff 130 ns VCC=-6V, IC=-2A IB1=IB2=50mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 349 SM-8 DUAL PNP MEDIUM POWER HIGH GAIN TRANSISTORS ZDT717 ZDT717 ISSUE 1 - NOVEMBER 1995 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). C1 B1 C1 E1 C2 B2 C2 E2 SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T717 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -12 V Collector-Emitter Voltage VCEO -12 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -10 A Continuous Collector Current IC -2.5 A Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C THERMAL CHARACTERISTICS PARAMETER SYMBOL Total Power Dissipation at Tamb = 25°C* Any single die “on” Both die “on” equally Ptot Derate above 25°C* Any single die “on” Both die “on” equally Thermal Resistance - Junction to Ambient* Any single die “on” Both die “on” equally SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V(BR)CBO -12 -35 V IC=-100µ A Collector-Emitter Breakdown Voltage V(BR)CEO -12 -25 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 -8.5 V IE=-100µ A Collector Cutoff Current ICBO -100 nA VCB=-10V Emitter Cutoff Current IEBO -100 nA VEB=-4V Collector Emitter Cutoff Current ICES -100 nA VCES=-10V Collector-Emitter Saturation Voltage VCE(sat) -10 -100 -110 -180 -17 -140 -170 -220 mV mV mV mV IC=-0.1A, IB=-10mA* IC=-1A, IB=-10mA* IC=-1.5A, IB=-50mA* IC=-2.5A, IB=-50mA* Base-Emitter Saturation Voltage VBE(sat) -0.9 -1.0 V IC=-2.5A, IB=-50mA* -0.8 -1.0 V IC=-2.5A, VCE=-2V* VALUE UNIT Base-Emitter Turn-On Voltage VBE(on) 2 2.5 W W Static Forward Current Transfer Ratio hFE 16 20 mW/ °C mW/ °C 300 300 180 60 45 475 450 275 100 70 Transition Frequency fT 80 110 62.5 50 °C/ W °C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. 3 - 348 PARAMETER MAX. UNIT CONDITIONS. IC=-10mA, VCE=-2V* IC=-100mA, VCE=-2V* IC=-2.5A, VCE=-2V* IC=-8A, VCE=-2V* IC=-10A, VCE=-2V* 30 MHz IC=-50mA, VCE=-10V f=100MHz Output Capacitance Cobo 21 pF VCB=-10V, f=1MHz Turn-On Time ton 70 ns Turn-Off Time toff 130 ns VCC=-6V, IC=-2A IB1=IB2=50mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 349 ZDT717 3 - 350