ZDT749TA

SM-8 DUAL PNP MEDIUM POWER TRANSISTORS ZDT749 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T749 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -6 A Continuous Collector Current IC Operating and Storage Temperature Range Tj:Tstg -2 A -55 to +150 °C THERMAL CHARACTERISTICS PARAMETER SYMBOL Total Power Dissipation at Tamb = 25°C* Any single die “on” Both die “on” equally Ptot Derate above 25°C* Any single die “on” Both die “on” equally Thermal Resistance - Junction to Ambient* Any single die “on” Both die “on” equally VALUE UNIT 2.25 2.75 W W 18 22 mW/ °C mW/ °C 55.6 45.5 °C/ W °C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. 3 - 351 ZDT749 ZDT749 TYPICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). -35 UNIT V -25 V CONDITIONS. IC=-100µ A, IE=0 IC=-10mA, IB=0* Collector-Emitter Breakdown Voltage V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO Collector Cutoff Current ICBO -0.1 -10 µA µA VCB=-30V VCB=-30V,T amb =100°C Emitter Cutoff Current IEBO -0.1 µA VEB=-4V, IE=0 Collector-Emitter Saturation Voltage VCE(sat) -0.12 -0.23 -0.3 -0.5 V V IC=1A, IB=-100mA* IC=2A, IB=-200mA* Base-Emitter Saturation Voltage VBE(sat) -0.9 -1.25 V IC=1A, IB=-100mA* tf 1.6 160 1.4 1.2 1.0 0.8 0.6 I /I =100 C B ns 1200 120 1000 100 80 600 Static Forward Current Transfer Ratio hFE -0.8 -1 V IC=-1A, VCE=-2V* V 0 200 200 200 150 50 0.001 100 160 MHz IC=-100mA, VCE=-5V f=100MHz pF VCB=-10V f=1MHz 40 ns 450 ns IC=-500mA, VCC=-10V IB1=IB2=-50mA Transition Frequency fT Output Capacitance Cobo 55 Switching Times ton toff 100 0.1 1 10 0.01 0.1 1 Switching Speeds 1.2 200 1.0 VCE=2V 160 120 IC/IB=10 0.8 0.6 80 40 0.001 0.01 0.1 1 10 IC/IB=100 0.4 0.001 0.01 0.1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC 1.2 1.0 VCE=2V 0.8 0.6 0.4 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) VBE(on) v IC 3 - 352 td IC - Collector Current (Amps) VCE(sat) v IC V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% tr 20 0 0.01 IC - Collector Current (Amps) IC=-50mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-6A, VCE=-2V* 300 60 IC/IB=10 V 70 100 75 15 ts tf 40 0.2 - (Volts) VBE(on) IE=-100µ A, IC=0 h Base-Emitter Turn-On Voltage V VCE=-10V 140 0.4 -5 IB1=IB2=IC/10 ns ts Switching time MAX. - (Volts) V(BR)CBO TYP. - Gain Collector-Base Breakdown Voltage SYMBOL MIN. tr - (Volts) PARAMETER td 1.8 3 - 353 1 10 ZDT749 ZDT749 TYPICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). -35 UNIT V -25 V CONDITIONS. IC=-100µ A, IE=0 IC=-10mA, IB=0* Collector-Emitter Breakdown Voltage V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO Collector Cutoff Current ICBO -0.1 -10 µA µA VCB=-30V VCB=-30V,T amb =100°C Emitter Cutoff Current IEBO -0.1 µA VEB=-4V, IE=0 Collector-Emitter Saturation Voltage VCE(sat) -0.12 -0.23 -0.3 -0.5 V V IC=1A, IB=-100mA* IC=2A, IB=-200mA* Base-Emitter Saturation Voltage VBE(sat) -0.9 -1.25 V IC=1A, IB=-100mA* tf 1.6 160 1.4 1.2 1.0 0.8 0.6 I /I =100 C B ns 1200 120 1000 100 80 600 Static Forward Current Transfer Ratio hFE -0.8 -1 V IC=-1A, VCE=-2V* V 0 200 200 200 150 50 0.001 100 160 MHz IC=-100mA, VCE=-5V f=100MHz pF VCB=-10V f=1MHz 40 ns 450 ns IC=-500mA, VCC=-10V IB1=IB2=-50mA Transition Frequency fT Output Capacitance Cobo 55 Switching Times ton toff 100 0.1 1 10 0.01 0.1 1 Switching Speeds 1.2 200 1.0 VCE=2V 160 120 IC/IB=10 0.8 0.6 80 40 0.001 0.01 0.1 1 10 IC/IB=100 0.4 0.001 0.01 0.1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC 1.2 1.0 VCE=2V 0.8 0.6 0.4 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) VBE(on) v IC 3 - 352 td IC - Collector Current (Amps) VCE(sat) v IC V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% tr 20 0 0.01 IC - Collector Current (Amps) IC=-50mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-6A, VCE=-2V* 300 60 IC/IB=10 V 70 100 75 15 ts tf 40 0.2 - (Volts) VBE(on) IE=-100µ A, IC=0 h Base-Emitter Turn-On Voltage V VCE=-10V 140 0.4 -5 IB1=IB2=IC/10 ns ts Switching time MAX. - (Volts) V(BR)CBO TYP. - Gain Collector-Base Breakdown Voltage SYMBOL MIN. tr - (Volts) PARAMETER td 1.8 3 - 353 1 10