ZDT758TC

SM-8 DUAL PNP MEDIUM POWER TRANSISTORS ZDT758 ZDT758 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T758 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -400 V Collector-Emitter Voltage VCEO -400 V PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage TYP. MAX. UNIT CONDITIONS. -400 V IC=-100µ A VCEO(SUS) -400 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µ A Collector Cutoff Current ICBO -100 nA VCB=-320V Collector Cutoff Current ICES -100 nA VCE=-320V Emitter Cutoff Current IEBO -100 nA VEB=-4V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -1 A Continuous Collector Current IC -0.5 A Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C Collector-Emitter Saturation Voltage VCE(sat) -0.30 -0.25 -0.50 V V V IC=-20mA, IB=-1mA IC=-50mA, IB=-5mA* IC=-100mA, IB=-10mA* VALUE UNIT Base-Emitter Saturation Voltage VBE(sat) -0.9 V IC=-100mA, IB=-10mA* 2.25 2.75 W W Base-Emitter Turn On Voltage VBE(on) -0.9 V IC=-100mA, VCE=-5V* 18 22 mW/ °C mW/ °C 55.6 45.5 °C/ W °C/ W THERMAL CHARACTERISTICS PARAMETER SYMBOL Total Power Dissipation at Tamb = 25°C* Any single die “on” Both die “on” equally Ptot Derate above 25°C* Any single die “on” Both die “on” equally Thermal Resistance - Junction to Ambient* Any single die “on” Both die “on” equally * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. Static Forward Current hFE Transfer Ratio 50 50 40 Transition Frequency fT 50 Output Capacitance Cobo Switching times t on toff IC=-1mA, VCE=-5V IC=-100mA, VCE=-5V* IC=-200mA, VCE=-10V* 20 140 2000 MHz IC=-20mA, VCE=-20V f=20MHz pF VCB=-20V, f=1MHz ns ns IC=-100mA, VC=-100V IB1=10mA, IB2=-20mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 354 3 - 355 SM-8 DUAL PNP MEDIUM POWER TRANSISTORS ZDT758 ZDT758 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T758 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -400 V Collector-Emitter Voltage VCEO -400 V PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage TYP. MAX. UNIT CONDITIONS. -400 V IC=-100µ A VCEO(SUS) -400 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µ A Collector Cutoff Current ICBO -100 nA VCB=-320V Collector Cutoff Current ICES -100 nA VCE=-320V Emitter Cutoff Current IEBO -100 nA VEB=-4V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -1 A Continuous Collector Current IC -0.5 A Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C Collector-Emitter Saturation Voltage VCE(sat) -0.30 -0.25 -0.50 V V V IC=-20mA, IB=-1mA IC=-50mA, IB=-5mA* IC=-100mA, IB=-10mA* VALUE UNIT Base-Emitter Saturation Voltage VBE(sat) -0.9 V IC=-100mA, IB=-10mA* 2.25 2.75 W W Base-Emitter Turn On Voltage VBE(on) -0.9 V IC=-100mA, VCE=-5V* 18 22 mW/ °C mW/ °C 55.6 45.5 °C/ W °C/ W THERMAL CHARACTERISTICS PARAMETER SYMBOL Total Power Dissipation at Tamb = 25°C* Any single die “on” Both die “on” equally Ptot Derate above 25°C* Any single die “on” Both die “on” equally Thermal Resistance - Junction to Ambient* Any single die “on” Both die “on” equally * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. Static Forward Current hFE Transfer Ratio 50 50 40 Transition Frequency fT 50 Output Capacitance Cobo Switching times t on toff IC=-1mA, VCE=-5V IC=-100mA, VCE=-5V* IC=-200mA, VCE=-10V* 20 140 2000 MHz IC=-20mA, VCE=-20V f=20MHz pF VCB=-20V, f=1MHz ns ns IC=-100mA, VC=-100V IB1=10mA, IB2=-20mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 354 3 - 355 ZDT758 TYPICAL CHARACTERISTICS Tamb=25°C 1.6 - (Volts) 1.4 IC/IB=10 IC/IB=20 IC/IB=50 1.2 1.0 0.8 0.2 h 0.1 1 VCE(sat) v IC VCE(sat) v IC +100°C +25°C -55°C VCE=10V - (Volts) 1.2 V 0.6 0.4 1.6 300 - Typical Gain 200 0.6 1.4 100 1.4 0.01 0.1 -55°C +25°C +100°C +175°C IC/IB=10 1.0 0.8 0.6 0.4 0.2 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC -55°C +25°C +100°C +175°C VCE=10V 0.8 0.2 0.01 0.1 1 10 20 IC - Collector Current (Amps) VBE(on) v IC 3 - 356 10 20 1.2 0 0.001 10 20 1 1.0 0 0.001 0.6 0.4 0.01 0.1 1 IC - Collector Current (Amps) 0.8 1.6 1.0 IC - Collector Current (Amps) 1.2 1.0 0.4 0.2 0 0.001 1.2 0 0.001 10 20 - (Volts) 1.4 0.01 h - Normalised Gain 1.6 IC/IB=10 0.2 V 0 0.001 1.4 -55°C +25°C +100°C +175°C 0.8 0.6 0.4 V V - (Volts) 1.6 10 20