ZHCS756TC

SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT” ISSUE 1- NOVEMBER 1997 ZHCS756 ✪ FEATURES: • Low V F • High Current Capability 1 C 2 1 APPLICATIONS: • DC - DC converters • Mobile telecomms • PCMCIA PARTMARK DETAIL: S76 A 3 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Continuous Reverse Voltage VR VALUE 60 UNIT V Forward Current (Continuous) IF 750 mA Forward Voltage @ IF = 750mA VF 610 mV Average Peak Forward Current; D.C. = 50% IFAV 1500 mA Non Repetitive Forward Current t≤100µs t≤10ms IFSM 12 5 A A Power Dissipation at Tamb= 25° C Ptot 500 mW Storage Temperature Range Tstg -55 to + 150 °C Junction Temperature Tj 125 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25° C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. Reverse Breakdown Voltage V (BR)R 60 80 Forward Voltage VF 250 285 350 440 520 600 760 Reverse Current IR 50 Diode Capacitance CD Reverse Recovery Time trr MAX. UNIT CONDITIONS. V IR= 300µA 290 330 410 500 610 700 900 mV mV mV mV mV mV mV IF= IF= IF= IF= IF= IF= IF= 100 µA V R= 45V 17 pF f= 1MHz,V R= 25V 12 ns switched from IF = 500mA to IR = 500mA Measured at IR = 50mA *Measured under pulsed conditions. Pulse width= 300µs; duty cycle ≤2% . 50mA* 100mA* 250mA* 500mA* 750mA* 1000mA* 1500mA* ZHCS756 TYPICAL CHARACTERISTICS 100m IR - Reverse Current (A) IF - Forward Current (A) 1 100m 10m 1m +125°C +25°C -55°C 1m 0 0.1 0.2 0.3 0.4 0.5 +100°C 1m +50°C 100u +25°C 10u 1u 100n 0.6 +125°C 10m -55°C 0 20 VF - Forward Voltage (V) IF v VF 1 Typical 1 D=t 1/t p 0.8 t D=0.5 p I F(av) =DxI 0.6 PF(av) =I F(pk) F(av) xV F D=0.2 0.4 D=0.1 D=0.05 60 70 80 90 100 110 PF(av) - Avg Pwr Diss (W) IF(av) - Avg Fwd Cur (A) t I F(pk) 0 Tj=125 C 0.4 0.3 DC D=0.5 D=0.2 D=0.1 D=0.05 0.1 0 120 t 0.2 0 TC - Case Temperature ( C) IF(av) v TC 0.4 D=t 1/t t p p I F(av) =DxI PF(av) =I 0.6 I F(pk) 0.8 F(av) F(pk) xV F 1 160 Rth=100°C/W Rth=200°C/W Rth=300°C/W 100 1 10 VR - Reverse Voltage (V) Ta v VR 100 CD - Diode Capacitance (pF) Ta - Ambient Temp (°C) 0.2 1 IF(av) - Avg Fwd Curr (A) PF(av) v IF(av) 125 75 60 0.5 Typical DC 0.2 40 VR - Reverse Voltage (V) IR v VR 80 0 0 20 40 VR - Reverse Voltage (V) CD v VR 60 ZHCS756 TYPICAL CHARACTERISTICS MAXIMUM TRANSIENT THERMAL RESISTANCE * Reference above figure, devices were mounted on a 15mmx15mm ceramic substrate.