ZRT100GA1TC

ZRT100 9.8V LOW POWER PRECISION REFERENCE SOURCE DESCRIPTION The ZRT100 is a monolithic integrated circuit providing a precise stable reference voltage of 9.8V at 500µA. The circuit features a knee current of 150µA and operation over a wide range of temperatures and currents. The ZRT100 is available in a SOT223 package for surface mount applications. This device offers a trim facility whereby the output voltage can be adjusted as s h o w n i n Fi g. 1 . Thi s f a c i l i t y i s use d w h e n compensating for system errors or setting the reference output to a particular value. When the trim facility is not used, the pin should be left open circuit. SOT223 FEATURES • Trimmable output • Excellent temperature stability • Low output noise figure • Available in two temperature ranges • 1 and 2% initial voltage tolerance versions available • No external stabilising capacitor required in most cases • Low slope resistance SOT223 Package suffix G • SOT223 small outline package Top view (pin 4 floating or connected to pin 2) ORDERING INFORMATION DEVICE TOL% OPERATING TEMP. PACKAGE PARTMARK ZRT100GC2 2 -40 to 85°C SOT223 ZRT100C2 ZRT100GC1 1 -40 to 85°C SOT223 ZRT100C1 ZRT100GA1 1 -55 to 125°C SOT223 ZRT100A1 A grade C grade -55°C to 125°C -40°C to 85°C ISSUE 3 - DECEMBER 2003 1 SEMICONDUCTORS ZRT100 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT 30 mA A grade -55 to 125 °C C grade -40 to 85 °C -55 to 150 °C Reverse current (1) Operating temperature: T OMP Storage temperature (1) T STG Above 25°C this figure should be linearly derated to 6mA at 125°C POWER DISSIPATION (at Tamb = 25°C unless otherwise stated) PACKAGE VALUE SOT223 2 UNIT W TEMPERATURE DEPENDENT ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER INITIAL VOLTAGE TOLERANCE % GRADE A GRADE C TYP MAX TYP MAX UNIT ∆V R Output voltage change over relevant temperature range(See note (a)) 1&2 27.0 90.0 10.8 34.4 mV TCVR Output voltage temperature coefficient (See note (b)) 1&2 15.0 50.0 15.0 50.0 ppm/°C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) SYMBOL PARAMETER VR Output voltage 1% tolerance (A1,C1) CONDITIONS MIN. TYP. I R =500␮A 9.70 9.60 2% tolerance (C2) ⌬V TRIM Output voltage adjustment range T C ⌬V TRIM Change in T C V R with output adjustment IR Operating current range t on t off Turn-on time Turn-off time e np-p RS MAX. UNIT 9.80 9.90 V 9.80 10.00 ⫾5 R T =100k⍀ 5.0 See note (c) 0.15 V % ppm/°C/% 30 mA R L =1k⍀ 400 0.3 ␮s Output voltage noise (over the range 0.1 to 10Hz) Peak to peak measurement 50 ␮V Slope resistance I R = 0.5mA to 5mA See note (d) 1.8 4.0 ⍀ ISSUE 3 - DECEMBER 2003 SEMICONDUCTORS 2 ZRT100 TYPICAL CHARACTERISTICS NOTES: (a) Output change with temperature (d) Slope resistance (RS) The absolute maximum difference between the maximum output voltage and the minimum output voltage over the specified temperature range: The slope resistance is defined as: RS = ⌬VR=Vmax-Vmin change inV R specific current range ⌬I=5-0.5=4.5mA (typically) (b) Output temperature coefficient (TCVR) (e) Line regulation The ratio of the output change with temperature to the specified temperature range expressed in ppm/°C: The ratio of change in output voltage to the change in input voltage producing it: ∆V R x 10 6 TCV R = ppm °C V R x∆T RS x 100 %/V V R x RSOURCE ⌬T= Full temperature range (c) Operating current (IR) Maximum operating current must be derated as indicated in maximum ratings. ISSUE 3 - DECEMBER 2003 3 SEMICONDUCTORS ZRT100 SCHEMATIC DIAGRAM Figure 1: This circuit will allow the reference to be trimmed over a wide range. The device is specified over a ⫾5% trim range. ISSUE 3 - DECEMBER 2003 SEMICONDUCTORS 4 ZRT100 PACKAGE OUTLINE Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters Inches DIM Millimeters Inches DIM Min Max Min Max Min Max Min Max A – 1.80 – 0.071 e 2.30 BSC 0.0905 BSC A1 0.02 0.10 0.0008 0.004 e1 4.60 BSC 0.181 BSC b 0.66 0.84 0.026 0.033 E 6.70 7.30 b2 2.90 3.10 0.114 0.122 E1 3.30 C 0.23 0.33 0.009 0.013 L 0.90 D 6.30 6.70 0.248 0.264 – 0.264 0.287 3.70 0.130 0.146 – 0.0355 – – – – © Zetex plc 2003 Americas Asia Pacific Zetex GmbH Streitfeldstraße 19 D-81673 München Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 3 - DECEMBER 2003 5 SEMICONDUCTORS