ZTX325STOB

NPN SILICON PLANAR RF TRANSISTOR ZTX325 ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL Noise Figure N Intermodulation Distortion dim Output Power (at Tcase=25°C)* PO MIN. TYP. MAX. UNIT CONDITIONS. 5.0 dB f=500MHz, VCE=5V, IC=2mA, RS=50Ω dB IC=14mA, VCE=6V, f=217MHz V0=100mV, RL=37.5Ω, f1=183MHz, f2=200MHz -53 175 mW VCE=13.5V, IC=22.5mA Pin=25mW, f=500MHz *It is essential that care be taken to reduce steady state current when no h.f. signal is applied. TYPICAL CHARACTERISTICS 80 hFE - Normalised Gain f T - (GHz) 3 f=400MHz 2 VCE=10V VCE=5V 1 0 0.1 1 100 10 1000 IC - Collector Current (mA) CRE - (pF) 2.0 1.5 1.0 0.5 0 10 20 10µ 100µ hFE v IC f=1MHz 20 30 VCE - (V) CRE v VCE 3-162 C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 2.5 V Mean Collector Current (Averaged over 100µs) IAV 25 mA Collector Current ICM 50 mA Power Dissipation at Tamb=25°C Ptot 350 mW Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 40 1m IC - Collector Current (A) fT v IC ISSUE 2 – MARCH 94 FEATURES * High fT, 1.3GHz * Low noise < 5dB at 500MHz * Power output at 500MHz >175mW VCE=10V 60 1µ ZTX325 10m 100m PARAMETER SYMBOL MIN. TYP. MAX. UNIT Collector-Emitter Sustaining Voltage VCEO(SUS) 15 V IC=10mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=10µA, IC=0 Collector Cut-Off Current ICBO 10 nA VCB=15V, IE=0 Emitter Cut-Off Current ICES 10 µA VCE=15V, VBE=0 Static Forward Current Transfer Ratio hFE 25 20 Transition Frequency fT 1.0 1.3 Capacitance, Collector Depletion Layer CTC Capacitance, Emitter Depletion Layer CTE Feedback Capacitance -Cre Feedback Time Constant rbb’Cb’c 150 125 IC=2mA, VCE=5V, f=400MHz IC=25mA, VCE=5V, f=400MHz 1.5 pF VCB=10V, IE=Ie=0, f=1MHz 2.0 pF VEB=0.5V, IC=Ic=0, f=1MHz pF VCE=5V, IC=2mA, f=1MHz ps VCB=5V, -IE=2mA, f=10.7MHz 12 3-161 IC=2mA, VCE=1V* IC=25mA, VCE=1V* GHz GHz 0.85 2.0 CONDITIONS. NPN SILICON PLANAR RF TRANSISTOR ZTX325 ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL Noise Figure N Intermodulation Distortion dim Output Power (at Tcase=25°C)* PO MIN. TYP. MAX. UNIT CONDITIONS. 5.0 dB f=500MHz, VCE=5V, IC=2mA, RS=50Ω dB IC=14mA, VCE=6V, f=217MHz V0=100mV, RL=37.5Ω, f1=183MHz, f2=200MHz -53 175 mW VCE=13.5V, IC=22.5mA Pin=25mW, f=500MHz *It is essential that care be taken to reduce steady state current when no h.f. signal is applied. TYPICAL CHARACTERISTICS 80 hFE - Normalised Gain f T - (GHz) 3 f=400MHz 2 VCE=10V VCE=5V 1 0 0.1 1 100 10 1000 IC - Collector Current (mA) CRE - (pF) 2.0 1.5 1.0 0.5 0 10 20 10µ 100µ hFE v IC f=1MHz 20 30 VCE - (V) CRE v VCE 3-162 C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 2.5 V Mean Collector Current (Averaged over 100µs) IAV 25 mA Collector Current ICM 50 mA Power Dissipation at Tamb=25°C Ptot 350 mW Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 40 1m IC - Collector Current (A) fT v IC ISSUE 2 – MARCH 94 FEATURES * High fT, 1.3GHz * Low noise < 5dB at 500MHz * Power output at 500MHz >175mW VCE=10V 60 1µ ZTX325 10m 100m PARAMETER SYMBOL MIN. TYP. MAX. UNIT Collector-Emitter Sustaining Voltage VCEO(SUS) 15 V IC=10mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=10µA, IC=0 Collector Cut-Off Current ICBO 10 nA VCB=15V, IE=0 Emitter Cut-Off Current ICES 10 µA VCE=15V, VBE=0 Static Forward Current Transfer Ratio hFE 25 20 Transition Frequency fT 1.0 1.3 Capacitance, Collector Depletion Layer CTC Capacitance, Emitter Depletion Layer CTE Feedback Capacitance -Cre Feedback Time Constant rbb’Cb’c 150 125 IC=2mA, VCE=5V, f=400MHz IC=25mA, VCE=5V, f=400MHz 1.5 pF VCB=10V, IE=Ie=0, f=1MHz 2.0 pF VEB=0.5V, IC=Ic=0, f=1MHz pF VCE=5V, IC=2mA, f=1MHz ps VCB=5V, -IE=2mA, f=10.7MHz 12 3-161 IC=2mA, VCE=1V* IC=25mA, VCE=1V* GHz GHz 0.85 2.0 CONDITIONS.