ZTX449STOA

PART OBSOLETE – CONTACT US NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ZTX449 ISSUE3 FEATURES * 30 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt OBSOLETE – PART DISCONTINUED C B E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage SYMBOL VCBO VALUE UNIT 50 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 2 A Continuous Collector Current IC Ptot 1 A 1 W -55 to +200 °C Power Dissipation at Tamb = 25°C Operating and Storage Temperature Range Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL V(BR)CBO MIN. UNIT CONDITIONS. 50 V IC=100µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 30 V IC=10mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µA, IC=0 Collector Cut-Off Current ICBO 0.1 10 µA µA Emitter Cut-Off Current IEBO Collector-Base Breakdown Voltage TYP. MAX. 0.1 µA VCB=40V VCB=40V, Tamb=100°C VEB=4V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) 0.5 1 V V IC=1A, IB=100mA* IC=2A, IB=200mA* Base-Emitter Saturati on Voltage VBE(sat) 1.25 V IC=1A, IB=100mA* Base-Emitter Turn-on Voltage VBE(on) 1 V IC=1A,VCE=2V* Static Forward Current Transfer Ratio FE Transition Frequency fT Output Capacitance Cobo 0 100 80 40 IC=50mA, VCE=2V* IC=500mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* 300 150 15 MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz *Measured under pulsed conditions. Pulse w dt =300µs. Duty cycle ≤ 2% ZTX449 OBSOLETE – PART DISCONTINUED TYPICAL CHARACTERISTICS